Results 51 to 60 of about 7,307,662 (147)

Variability study of Si nanowire FETs with different junction gradients

AIP Advances, 2016
Random dopant fluctuation effects of gate-all-around Si nanowire field-effect transistors (FETs) are investigated in terms of different diameters and junction gradients.
Jun-Sik Yoon, Kihyun Kim, Taiuk Rim, Chang-Ki Baek   +3 more
doaj   +1 more source

The Problems of “Brain Drain” in Russia and Member States of the Eurasian Economic Union (EAEU)

RUDN Journal of Economics, 2017
Among many problems that determine current international migration of population, those that are associated with the phenomenon of “brain drain” are of particular importance and topicality.
Vladimir A Iontsev, Natalia S Zimova, Alexander A Subbotin   +2 more
doaj   +1 more source

Surface-Potential-Based Drain Current Model of Gate-All-Around Tunneling FETs

IEEE Journal of the Electron Devices Society
A closed-form, analytical, and unified model for the surface potential from source to drain in nanowire (NW) gate-all-around (GAA) tunneling field effect transistors (TFETs) is proposed and validated.
Zhanhang Chen, Haoliang Shan, Ziyi Ding, Xia Wu, Xiaolin Cen, Xiaoyu Ma, Wanling Deng, Junkai Huang   +7 more
doaj   +1 more source

SiC MOSFET Active Gate Drive Circuit Based on Switching Transient Feedback

Energies
Due to the influence of parasitic internal parameters and junction capacitance, the silicon carbide (SiC) power devices are frequently marred by significant overshoots in current and voltage, as well as high-frequency oscillations during the switching ...
Cheng Xu, Yiru Miao
doaj   +1 more source

The Impact of Magnetic Field on Defective FDSOI and FinFET Devices

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
This article explores the efficacy of a unique defect detection mechanism for the FinFET and FDSOI transistors: magnetomodulation of drain current. Using multiphysics technology CAD (TCAD), we model the impact of static and transient magnetic fields on ...
Munazza Sayed, Hussam Amrouch
doaj   +1 more source

Increase of saturation current in unipolar field-effect transistor due to bulk electric conductance of organic semiconductor

AIP Advances, 2019
We considered an organic field-effect transistor (OFET) based on a squaraine (SQ) fiber, where the electric conductance of the accumulation channel is comparable with the bulk conductance of the SQ fiber.
L. V. Govor, J. Parisi
doaj   +1 more source

A Micro Data Analisys Of Italy’s Brain Drain [PDF]

Contrary to current thinking which views the European brain drain as a transitory phenomenon, this paper shows, using a micro-data analysis, that, as far as Italy is concerned, such migration is permanent.
Monteleone, Simona, Torrisi, Benedetto
core  

New Method for Determination of Drain Saturation Voltage in Short Channel MOS Devices Between Liquid Helium to Room Temperature

Active and Passive Electronic Components, 2001
A new method for drain saturation voltage extraction in submicron MOSFETs is presented. It is based on measurements of the partial derivative of the impact ionization rate.
Y. Amhouche, A. El Abbassi, K. Raïs, E. Bendada, R. Rmaily   +4 more
doaj   +1 more source

Understanding the Role of Temperature and Drain Current Stress in InSnZnO TFTs with Various Active Layer Thicknesses. [PDF]

Nanomaterials (Basel), 2020
Wang D, Furuta M, Tomai S, Yano K.
europepmc   +1 more source

A micro data analysis of Italy’s brain drain [PDF]

Contrary to current thinking which views the European brain drain as a transitory phenomenon, this paper shows, using a micro-data analysis, that, as far as Italy is concerned, such migration is permanent.
Simona Monteleone, Benedetto Torrisi
core