Results 31 to 40 of about 7,307,662 (147)
Drain Notice of Adopted Amendment (2007-05-17)
, 2007 12 pp. Adopted 2007-05-17. Department of Land Conservation and Development Notice of Adopted AmendmentThe adopted amendment rezoned assessor's map 22-05-08-00 TL 300 from Rural Residential (RR-2) to Low Density Residential (R-l).
Drain
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High Efficiency Continuous Inverse Class-F Power Amplifier with Modified Current Waveform
Journal of Microwaves, Optoelectronics and Electromagnetic Applications, 2020 Continuous inverse class-F (CICF) is a recent mode of harmonically-tuned RF power amplifiers used to extend the operating bandwidth of the conventional narrowband class-F−1 power amplifier by producing variable set of drain current waveforms and load ...
Firas M. Ali +2 more
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Drain Notice of Adopted Amendment (2010-01-20)
, 2010 23 pp. Adopted 2010-01-20.
Drain
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Improving the Scalability of SOI-Based Tunnel FETs Using Ground Plane in Buried Oxide
IEEE Journal of the Electron Devices Society, 2019 Tunnel field-effect transistors (TFETs) are known to exhibit degraded electrical characteristics at smaller channel lengths, primarily due to direct source-to-drain band-to-band tunneling (BTBT).
Shelly Garg, Sneh Saurabh
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Simulation of heavy ion irradiation effect on 3D MOSFET
AIP Advances, 2023 Single event upset effect is an important factor that causes performance degradation and functional failure of aerospace equipment components in space radiation environment.
Ke Li +4 more
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Mechanism of drain current's saturation in the field transistor with p-n-junction
Технологія та конструювання в електронній апаратурі, 2006 The processes of drain current saturation in a p–n junction field‑effect transistor have been investigated. It is shown that, when analyzing saturation in a common‑source circuit or under self‑bias conditions, it is necessary to take into account the ...
D. M. Yodgorova
doaj
Performance Valuation of Electrical Characteristics for MOSFET Device Using TCAD software
ITEGAM-JETIAMOSFET transistor is one of the most important and efficient components in modern electronic circuits due to its high efficiency and low power consumption.
Zahra R. Mahmood +2 more
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Elite scientists and the global brain drain [PDF]
, 2007 There are signs – one is world university league tables – that people increasingly think globally when choosing the university in which they wish to work and study. This paper is an exploration of data on the international brain drain.
Ali, Showkat +7 more
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Applications of Modelling and Simulation, 2023 Five electron transport models for drain current equations of symmetric 10 nm Silicon-based (Si-based) double-gate (DG) nano-MOSFET have been numerically investigated in this paper. All these models are based on ballistic transport flow. The first model,
Ooi Chek Yee
doaj
Comparative research on heavy ion irradiation effects of MOSFETs with different structures
AIP AdvancesIn a complex space environment, high-energy ions can cause radiation damage effects on MOSFETs, leading to functional errors and even permanent damage. This study uses the finite element method to establish floating-body MOSFETs with bulk silicon, PDSOI,
Jiaxin Wei +6 more
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