Results 41 to 50 of about 7,307,662 (147)
Do Brain Drain and Poverty Result from Coordination Failures? [PDF]
We explore the complementarities between high-skill emigration and poverty in developing countries. We build a model endogenizing human-capital accumulation, high-skill migration and productivity. Two countries sharing the same characteristics may end up
Frederic DOCQUIER, David DE LA CROIX
core +2 more sources
The influence of rapid heat treatment (450 °C, 7 s) on the electrical parameters of CMOS integrated circuits during the formation of ohmic contact between aluminum metallization and polysilicon is considered.
V. A. Pilipenko +4 more
doaj +1 more source
In this paper, we present a drain current model for stressed short-channel MOSFET's. Stress conditions are chosen so that the interface states generated by hot-carriers are dominant.
R. Marrakh, A. Bouhdada
doaj +1 more source
Brain drain in developing countries [PDF]
Relying on an original data set on international migration by educational attainment for 1990 and 2000, we analyze the determinants of the brain drain from developing countries.
Abdeslam, MARFOUK +2 more
core
In this study, a model has been developed to analyze AlGaN/GaN high-electron-transistor (HEMT) and metal-oxide semiconductor high-electron-transistor (MOSHEMT) based biosensors.
Abdellah Bouguenna +3 more
doaj +1 more source
The Brain Drain. A Survey of the Literature [PDF]
This paper reviews the theoretical and empirical literature on Brain Drain (BD). We propose an ideal path that links the first studies with the most recent ones. In this development, the literature on BD focuses on a variety of economic and social issues
Pierpaolo Giannoccolo
core
Remittances and the brain drain [PDF]
In most destination countries, immigration policies are increasingly tilted toward the most skilled individuals. Whether this shift hurts economic prospects in sending countries, as argued by the traditional brain drain literature, is somewhat ...
Riccardo Faini
core
Substrate Current Enhances HCI Lifetime in STI-Based LDMOS
There is an increasing demand for LDMOS with low RON, high IDSAT, and longer HCI lifetime offered by standard CMOS technology. We achieved these demands without introducing additional processes or altering the LDMOS design. Increasing the dose and energy
Yoo Seon Song +10 more
doaj +1 more source
The electrical characteristics of In0.53Ga0.47As MOSFET grown with Si interface passivation layer (IPL) and high k gate oxide HfO2 layer have been investigated in detail.
C. H. Yu +4 more
doaj +1 more source
Is the Brain Drain an Unmitigated Blessing? [PDF]
migration, brain drain, eduction ...
Faini, Riccardo
core

