Results 11 to 20 of about 7,307,662 (147)
The ‘Brain Drain’ Academic and Skilled Migration to the UK and its Impacts on Africa [PDF]
, 2005 In December 2004 the Association of University Teachers and the College and Lecturers Union NATFHE jointly commissioned research to review some of the literature on ‘the Brain Drain’ with a specific emphasis on developing countries in Africa and on ...
Nunn, AE, Price, S
core +8 more sources
Transient Analysis of Donor-like Surface Traps in GaN HEMTs [PDF]
AUT Journal of Electrical Engineering, 2022 Charge trapping in Gallium Nitride-based devices affect their reliability and performance. In this paper, we study the dynamics of charge capture and emission in donor-like surface traps, and the impact of trapped charges on transient response of the ...
Amirali Chalechale +2 more
doaj +1 more source
The brain drain phenomenon in higher education in Greece: attitudes and opinions on the decision to immigrate [PDF]
, 2016 Brain drain is increasingly a matter of concern within the EU, as more and more highly skilled people migrate from the European south to the north and west of the continent.
Paliktzoglou, Vasileios +3 more
core +3 more sources
gm/Id$g_m/I_d$ Analysis of vertical nanowire III–V TFETs
Electronics Letters, 2023 Experimental data on analog performance of gate‐all‐around III‐V vertical Tunnel Field‐Effect Transistors (TFETs) and circuits are presented. The individual device shows a minimal subthreshold swing of 44 mV/dec and transconductance efficiency of 50 V−1 ...
Gautham Rangasamy +3 more
doaj +1 more source
Some features of a current limiter on the field-effect transistor [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2011 The paper presents researches of dependence of stabilization current from the external resistance connecting the source and the gate of the field-effect transistor in the mode of the current limiter — a two-pole terminal.
Karimov A. V., +6 more
doaj +2 more sources
Modeling the Effects of Threading Dislocations on Current in AlGaN/GaN HEMT
Micromachines, 2023 The aim of this paper is to model the effects of threading dislocations on both gate and drain currents of AlGaN/GaN high electron mobility transistors (HEMTs).
Censong Liu +4 more
doaj +1 more source
Applied Sciences, 2018 Polycrystalline silicon (poly-Si) thin film transistors (TFT) with a tri-gate fin-like structure and wide drain were designed and simulated to improve gate-induced drain leakage (GIDL), ON-state current, and breakdown voltage.
Hsin-Hui Hu, Yan-Wei Zeng, Kun-Ming Chen
doaj +1 more source
Assessment of Global Variability in UTBB MOSFETs in Subthreshold Regime
Journal of Low Power Electronics and Applications, 2014 The global variability of ultra-thin body and buried oxide (UTBB) MOSFETs in subthreshold and off regimes of operation is analyzed. The variability of the off-state drain current, subthreshold slope, drain-induced barrier lowering (DIBL), gate leakage ...
Sergej Makovejev +5 more
doaj +1 more source
Analysis on Tunnel Field-Effect Transistor with Asymmetric Spacer
Applied Sciences, 2020 Tunnel field-effect transistor (Tunnel FET) with asymmetric spacer is proposed to obtain high on-current and reduced inverter delay simultaneously.
Hyun Woo Kim, Daewoong Kwon
doaj +1 more source
Improving graphene non‐volatile memory using self‐aligned gate
Electronics Letters, 2016 As the scale of graphene‐based non‐volatile memory is reduced, the ratio of access resistance RA to total channel resistance RTOT is increased. To investigate the effect of the RA on I–V characteristics, we fabricated devices with various access lengths ...
K. Lee, O. Kim
doaj +1 more source