Mathematical Modeling of Drain Current Estimation in a CSDG MOSFET, Based on La2O3 Oxide Layer with Fabrication—A Nanomaterial Approach [PDF]
Nanomaterials, 2022 In this work, three-dimensional modeling of the surface potential along the cylindrical surrounding double-gate (CSDG) MOSFET is proposed. The derived surface potential is used to predict the values of electron mobility along the length of the device ...
Naveenbalaji Gowthaman +1 more
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Drain Current Modulation of a Single Drain MOSFET by Lorentz Force for Magnetic Sensing Application [PDF]
Sensors, 2016 This paper reports a detailed analysis of the drain current modulation of a single-drain normal-gate n channel metal-oxide semiconductor field effect transistor (n-MOSFET) under an on-chip magnetic field.
Prasenjit Chatterjee +2 more
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A Physic-Based Explicit Compact Model for Reconfigurable Field-Effect Transistor
IEEE Access, 2021 In this paper, a compact model for the double-gate Reconfigurable Field-Effect Transistor (RFET) is presented. Firstly, the physics-based surface potential model is derived by solving Poisson’s equation at different channel regions.
Wangze Ni +4 more
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Light effect in photoionization of traps in GaN MESFETs [PDF]
Papers in Physics, 2009 Trapping of hot electron behavior by trap centers located in buffer layer of a wurtzite phase GaN MESFET has been simulated using an ensemble Monte Carlo simulation.
H. Arabshahi, A. Binesh
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Characterization of single event effect simulation in InP-based High Electron Mobility Transistors
Results in Physics, 2022 The characteristics and mechanism of single event effects (SEEs) in InP-based High Electron Mobility Transistors (HEMTs) are investigated by technology computer-aided design (TCAD) simulations.
Shuxiang Sun +6 more
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Sensors, 2020 Nephrogenic diabetes insipidus (NDI), which can be congenital or acquired, results from the failure of the kidney to respond to the anti-diuretic hormone (ADH). This will lead to excessive water loss from the body in the form of urine.
Reena Sri Selvarajan +4 more
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An experimental study on switching waveform design with gate charge control for power MOSFETs
Power Electronic Devices and Components, 2023 Designing switching waveforms is a technique for mitigating a trade-off between loss and noise in switching power devices. A novel and simple method has been proposed to compute the gate waveform to realize a designed switching waveform. The gate current
Hirotaka Oomori, Ichiro Omura
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Electron mobility and drain current in strained-Si MOSFET
Journal of Telecommunications and Information Technology, 2023 Electron mobility and drain current in a strained-Si MOSFET have been calculated and compared with the mobility and drain current obtained for the relaxed material.
jakub Walczak, Bogdan Majkusiak
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Testing of electrical insulation mats in TS 35/10 kV and analysis of the actual situation [PDF]
BakarThe aim of this paper is to present the principle of testing electrical insulation mats and the results of the tests as well as observed irregularities in their operation in transformer stations 35/10 kV (TS 35/10) in Serbia.
Vujić Jovan +2 more
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High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al2O3 dielectric
Functional Diamond, 2023 The high frequency H-diamond metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on single diamond substrate using 300°C ALD grown Al2O3 as gate dielectric and passivation layer.
Ma Yuanchen +8 more
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