Results 51 to 60 of about 106,345 (262)

High‐κ Perovskite‐Like Ternary Niobium Oxide Dielectrics for 2D Electronics

Advanced Materials, EarlyView.
High‐κ dielectrics are vital for scaled electronics. Here, a family of 2D high‐κ perovskite‐like ternary niobium oxides is synthesized via a molten salt‐assisted method. Their integration into FETs and logic gates reveals superior switching characteristics, providing a fresh material platform and new insights for the advancement of high‐performance 2D ...
Biao Zhang, Jianmiao Guo, Jianmin Yan, Jialiang Wang, Chao Yun, Guang Zeng, Jie Li, Cong Wang, Zhengdao Xie, Yanglong Hou, Yang Chai   +10 more
wiley   +1 more source

In-Depth Review and Comparative Analysis of DRAM-Based PUFs

IEEE Access
Dynamic Random-Access Memory Physical Unclonable Functions (DRAM PUFs) are gaining interest in hardware security, particularly for resource-constrained IoT devices such as smart sensors in the era of rapid digitalization. Since DRAM is present in most of
Yuin Yee Chew, Wei Liang Lim, Jun Liang Tan, Chia Yee Ooi   +3 more
doaj   +1 more source

DRAM triggers lysosomal membrane permeabilization and cell death in CD4(+) T cells infected with HIV. [PDF]

PLoS Pathogens, 2013
Productive HIV infection of CD4(+) T cells leads to a caspase-independent cell death pathway associated with lysosomal membrane permeabilization (LMP) and cathepsin release, resulting in mitochondrial outer membrane permeabilization (MOMP).
Mireille Laforge, Sophie Limou, Francis Harper, Nicoletta Casartelli, Vasco Rodrigues, Ricardo Silvestre, Houda Haloui, Jean-Francois Zagury, Anna Senik, Jerome Estaquier   +9 more
doaj   +1 more source

Printed Interconnects for Heterogeneous Systems Integration on Flexible Substrates

Advanced Materials Technologies, Volume 10, Issue 6, March 18, 2025.
Key components (sensors, energy devices, communication devices, computing chips, and interconnects) of flexible hybrid electronic (FHE) system connected via conductive printed metal tracks. The figure in the insets shows out‐of‐plane printed interconnects providing opportunities for lithography‐free formation of VIAs, in‐plane access of UTCs pads, and ...
Abhishek Singh Dahiya, Adamos Christou, Sihang Ma, Ravinder Dahiya   +3 more
wiley   +1 more source

Parallelism-Aware Memory Interference Delay Analysis for COTS Multicore Systems [PDF]

, 2014
In modern Commercial Off-The-Shelf (COTS) multicore systems, each core can generate many parallel memory requests at a time. The processing of these parallel requests in the DRAM controller greatly affects the memory interference delay experienced by ...
Yun, Heechul
core  

AI‐Optimized Vanadium Oxide Multilayers for More Than 20‐fold Enhancement in Bolometric Performance

Advanced Science, EarlyView.
Machine‐learning‐optimized WxV1‐xOy multilayer thin films with graded doping achieve a high TCR (7.3 % K−1), reduced hysteresis, and low noise under CMOS‐compatible growth conditions. This approach overcomes the long‐standing trade‐off in microbolometers between linear response and performance, offering a universal bolometric parameter greatly enhanced
Jin‐Hyun Choi, Hyoung‐Taek Lee, Jeonghoon Kim, Miju Park, Seungjoon Sun, Gye‐Hyeon Kim, Myung‐Ho Kwon, Hyeong‐Ryeol Park, Changhee Sohn   +8 more
wiley   +1 more source

Oxide Semiconductor Thin‐Film Transistors for Low‐Power Electronics

Advanced Science, EarlyView.
This review explores the progress of oxide semiconductor thin‐film transistors in low‐power electronics. It illustrates the inherent material advantages of oxide semiconductor, which enable it to meet the low‐power requirements. It also discusses current strategies for reducing power consumption, including interface and structure engineering.
Shuhui Ren, Qi Huang, Dingwei Li, Saisai Wang, Yitong Chen, Huihui Ren, Yan Wang, Yingjie Tang, Bowen Zhu   +8 more
wiley   +1 more source

Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

Advanced Electronic Materials, EarlyView.
A physics‐based compact model for Conductive‐Metal‐Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non‐volatile conductance modulation and memory state stabilization enable reliable circuit‐level studies, advancing the optimization of neuromorphic and ...
Matteo Galetta, Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Stephan Menzel, Antonio La Porta, Tommaso Stecconi, Folkert Horst, Bert Jan Offrein, Valeria Bragaglia   +9 more
wiley   +1 more source

Extending Memory Capacity in Modern Consumer Systems With Emerging Non-Volatile Memory: Experimental Analysis and Characterization Using the Intel Optane SSD

IEEE Access, 2023
DRAM scalability is becoming a limiting factor to the available memory capacity in consumer devices. As a potential solution, manufacturers have introduced emerging non-volatile memories (NVMs) into the market, which can be used to increase the memory ...
Geraldo F. Oliveira, Saugata Ghose, Juan Gomez-Luna, Amirali Boroumand, Alexis Savery, Sonny Rao, Salman Qazi, Gwendal Grignou, Rahul Thakur, Eric Shiu, Onur Mutlu   +10 more
doaj   +1 more source

The Value-of-Information in Matching with Queues

, 2015
We consider the problem of \emph{optimal matching with queues} in dynamic systems and investigate the value-of-information. In such systems, the operators match tasks and resources stored in queues, with the objective of maximizing the system utility of ...
Bishop C., Chung F.
core   +1 more source