Results 61 to 70 of about 97,626 (219)

Improved Molybdenum Dioxide Atomic Layer Deposition Process by Introducing Pre‐Reduction Agent

Advanced Electronic Materials, EarlyView.
This study investigates MoO2 thin films deposited by ALD as electrode materials for next‐generation DRAM capacitors. A pre‐reduction step using ethanol is introduced to control the oxidation state of MoOx and to suppress surface morphology degradation.
Soo Min Yoo, Seungwoo Lee, Chaeyeong Hwang, Woojin Jeon   +3 more
wiley   +1 more source

Suppression of Capacitor Leakage Through Thermal Budget Control in DRAM With ZrO₂-Based Dielectrics

IEEE Access
As the DRAM devices continue to scale down, the leakage current of the capacitors is having a significant impact on DRAM operation. We have analyzed the factors that significantly affect the leakage current of DRAM capacitors and improved the leakage ...
Dong-Sik Park, Eun-Ok Lee, Jong-Min Lee, Eunae Cho, Byongdeog Choi   +4 more
doaj   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

Advanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

SpyHammer: Understanding and Exploiting RowHammer Under Fine-Grained Temperature Variations

IEEE Access
RowHammer is a DRAM vulnerability that can cause bit errors in a victim DRAM row solely by accessing its neighboring DRAM rows at a high-enough rate. Recent studies demonstrate that new DRAM devices are becoming increasingly vulnerable to RowHammer, and ...
Lois Orosa, Ulrich Ruhrmair, A. Giray Yaglikci, Haocong Luo, Ataberk Olgun, Patrick Jattke, Minesh Patel, Jeremie S. Kim, Kaveh Razavi, Onur Mutlu   +9 more
doaj   +1 more source

The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFET

Nanoscale Research Letters, 2017
The larger volume of capacitor and higher leakage current of transistor have become the inherent disadvantages for the traditional one transistor (1T)-one capacitor (1C) dynamic random access memory (DRAM).
Wei Li, Hongxia Liu, Shulong Wang, Shupeng Chen, Qianqiong Wang   +4 more
doaj   +1 more source

SuperNeurons: Dynamic GPU Memory Management for Training Deep Neural Networks

, 2018
Going deeper and wider in neural architectures improves the accuracy, while the limited GPU DRAM places an undesired restriction on the network design domain.
Abadi M., Coates A., Collobert R., Dean J., Krizhevsky A., LeCun Y., Szegedy C., Vanhoucke V., Wang L.   +8 more
core   +1 more source

Performance Enhancement in Hafnium Oxide Through Homogeneous and Heterogeneous co‐Doping Strategies

Advanced Electronic Materials, EarlyView.
This article presents a comprehensive co‐doping toolkit to optimize the performance and reliability of fluorite‐structure ferroelectrics like hafnium oxide. By employing homogeneous and heterogeneous co‐doping strategies, precise control over crystallization behavior, polarization hysteresis, and oxygen vacancy distribution is achieved.
Shouzhuo Yang, David Lehninger, Markus Neuber, Amir Pourjafar, Yannick Raffel, Ayse Sünbül, Anant Rastogi, Peter Reinig, Thomas Kämpfe, Konrad Seidel, Maximilian Lederer   +10 more
wiley   +1 more source

Rethinking the Producer-Consumer Relationship in Modern DRAM-Based Systems

IEEE Access
Generational improvements to commodity DRAM throughout half a century have long solidified its prevalence as main memory across the computing industry. However, overcoming today’s DRAM technology scaling challenges requires new solutions driven by
Minesh Patel, Taha Shahroodi, Aditya Manglik, Abdullah Giray Yaglikci, Ataberk Olgun, Haocong Luo, Onur Mutlu   +6 more
doaj   +1 more source

SwapX: An NVM-Based Hierarchical Swapping Framework

IEEE Access, 2017
Non-volatile memory (NVM) provides persistence with dynamic random access memory (DRAM)-like performance. This paper presents SwapX, an NVM-based hierarchical swapping framework for guest operating systems (OSs) in virtual machines (VMs).
Guoliang Zhu, Kai Lu, Xiaoping Wang, Yiming Zhang, Pengfei Zhang, Sparsh Mittal   +5 more
doaj   +1 more source

Flexible Memory: Progress, Challenges, and Opportunities

Advanced Intelligent Discovery, EarlyView.
Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan, Sen Chen, Minghui Guo, Ziliang Cui, Yujie Du, Jing Liu   +5 more
wiley   +1 more source