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Atomic-scale mapping of quantum dots formed by droplet epitaxy
Nature Nanotechnology, 2009Quantum dots (QDs) have applications in optoelectronic devices, quantum information processing and energy harvesting. Although the droplet epitaxy fabrication method allows for a wide range of material combinations to be used, little is known about the growth mechanisms involved. Here we apply direct X-ray methods to derive sub-ångström resolution maps
Divine P, Kumah +4 more
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Droplet Epitaxy and applications
2014The semiconductor quantum dot (QD) intermediate band solar cells (IBSC) design introduce an extension of the absorption coefficient of the host semiconductor to lower energies without voltage loss [1]. The IBSC working mechanisms have been demonstrated via Stranski-Krastavov self-assembly of InAs QDs in GaAs, but many issues such as strain defect ...
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GaAs based nanostructures grown by droplet epitaxy
2011What makes three dimensional semiconductor quantum nanostructures (QN) so attractive is the possibility to tune their electronic properties by careful design of their size and composition. These parameters set the confinement potential of electrons and holes, thus determining the electronic and optical properties of the QN.
SANGUINETTI, STEFANO +3 more
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Droplet epitaxy nanostructures for device applications
2014Droplet epitaxy (DE) is a non-conventional growth technique based on molecular beam epitaxy. This method allows for the fabrication of lattice-matched and strain-free self-assembled III-V nanostructures, reducing the size dispersion between 5 and 20%.
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EMISSION PROPERTIES OF DROPLET EPITAXY QUANTUM DOTS
2007We present results concerning the emission from quantum dots grown by droplet ...
COLOCCI, MARCELLO +6 more
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InGaAs nanostructures grown by droplet molecular beam epitaxy
InGaAs ring-shaped nanostructures are fabricated by droplet epitaxy technique using solid source molecular beam epitaxy (MBE). InGa droplet forming conditions have been varied in order to investigate the effect of substrate temperature during InGa deposition and deposited amount of indium (In) and Gallium (Ga) on InGaAs ring-structures.openaire +1 more source
InAs/InP Quantum Dots in Etched Pits by Droplet Epitaxy in Metalorganic Vapor Phase Epitaxy
Physica Status Solidi - Rapid Research Letters, 2020Dr Elisa Maddalena Sala +2 more
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Self‐Assembly of Multiple Stacked Nanorings by Vertically Correlated Droplet Epitaxy
Advanced Functional Materials, 2014Jiang Wu, Xinlei Li, Jihoon Lee
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