Results 61 to 70 of about 838 (183)
AIP Advances, 2016 We investigated the excitation power P dependence of photoluminescence (PL) spectra of GaSb type-II quantum dots (QDs) in GaAs grown by droplet epitaxy.
T. Kawazu, T. Noda, Y. Sakuma, H. Sakaki
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Exploring the Potential of Microwave Annealing for Enhancing Si‐based GeSn Lasers
Advanced Materials Technologies, EarlyView.We explore low‐thermal‐budget microwave annealing to enhance the performance of group‐IV GeSn lasers on Si. Microwave annealing under optimal conditions can simultaneously relax unwanted compressive strain and enhance the material quality of the GeSn active layer, thereby reducing the threshold and increasing the laser operating temperature.
Yue‐Tong Jheng +8 more
wiley +1 more source
Advanced Materials Technologies, EarlyView.A methodological framework is presented for combinatorial REBCO thin films fabricated by drop‐on‐demand inkjet printing with controlled Rare Earth composition gradients. Automated, synchrotron‐based, and local characterization techniques produce comprehensive property maps that correlate composition and TLAG process parameters with superconducting ...
Emma Ghiara +15 more
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Nanoscale Research Letters, 2011 In this work, we study metal droplets on a semiconductor surface that are the initial stage for both droplet epitaxy and local droplet etching. The distributions of droplet geometrical parameters such as height, radius and volume help to understand the ...
Lyamkina AA +5 more
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Advanced Photonics Research, Volume 6, Issue 5, May 2025.Microfabrication using nano‐ to micron‐sized blocks has transformative potential for next‐gen electronics, optoelectronics, and materials. Traditional methods are limited by scalability and precision. STIC, a single‐laser system for precise colloid manipulation and immobilization using femtosecond lasers, is introduced that enables efficient 3D ...
Krishangi Krishna +4 more
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Crystal Structures of GaN Nanodots by Nitrogen Plasma Treatment on Ga Metal Droplets
Metals, 2018 Gallium nitride (GaN) is one of important functional materials for optoelectronics and electronics. GaN exists both in equilibrium wurtzite and metastable zinc-blende structural phases.
Yang-Zhe Su, Ing-Song Yu
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Advanced Science, EarlyView.Hyperfine coupling to 29Si$^{29}{\rm Si}$ and 73Ge$^{73}{\rm Ge}$ nuclear spins limits hole spin‐qubit coherence in Ge heterostructures. We demonstrate device‐grade, nuclear‐spin‐free 70Ge$^{70}{\rm Ge}$/28Si70Ge$^{28}{\rm Si}^{70}{\rm Ge}$ quantum wells grown on industrial SiGe buffers with minimal use of enriched precursors.
Patrick Daoust +11 more
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Multi‐Physical Field Modulated P‐Bit Device Based on VO2 Thin Film
Advanced Science, EarlyView.We have proposed a VO2‐based P‐bit device where synergistic multi‐physical field modulation enables real‐time tunability of randomness. Besides introducing a new phase‐change material‐based device approach for high‐performance P‐bits, this study also demonstrates a synergistic multi‐physical field modulation strategy that opens new opportunities for ...
Bowen Sun +10 more
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Advanced Science, EarlyView.ABSTRACT Maghemite (γ$\gamma$‐Fe2${\rm Fe}_2$O3${\rm O}_{3}$) is a promising non‐precious‐metal‐containing photocatalyst for water oxidation (OER). Despite being less studied than Hematite, it offers similar corrosion resistance and a favorable band structure, along with higher conductivity and the advantage of an adaptable spinel structure.
Francesco Paparoni +6 more
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Advanced Electronic Materials, EarlyView.III‐nitride semiconductors have revolutionized optoelectronics, enabling transformative technologies such as high‐efficiency LEDs and lasers. However, their use in intersubband optoelectronics has remained limited. This work marks an important step forward by demonstrating highly coherent inter‐well resonant tunneling injection in III‐nitride ...
Jimy Encomendero +6 more
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