Results 71 to 80 of about 838 (183)
Applied Physics ExpressThe development of tunable photonic devices is strategic for miniaturized optical instrumentation and sensing systems. Exploiting the birefringence variation of liquid crystals (LCs) instead of MEMS actuation in such devices could bring better spectral ...
Hugo Villanti +6 more
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Droplet epitaxy of InGaN quantum dots on Si (111) by plasma-assisted molecular beam epitaxy. [PDF]
Discov Nano, 2023 Nurzal N, Hsu TY, Susanto I, Yu IS.
europepmc +1 more source
Uranium Doped Gallium Nitride Epitaxial Thin Films
Advanced Electronic Materials, EarlyView.Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix +10 more
wiley +1 more source
Topological Materials and Related Applications
Advanced Electronic Materials, EarlyView.This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti +9 more
wiley +1 more source
Advanced Physics Research, EarlyView.This study demonstrates a versatile hardware platform using nano‐oscillators based on binary oxides for deterministic and probabilistic computing. By tailoring material physics, NbOx enables energy‐efficient synchronization for pattern recognition, while enhanced stochasticity in engineered SiOx provides robust entropy for p‐bits to solve complex ...
Jihyun Kim +3 more
wiley +1 more source
Phase‐Pure 2D Interfacial Perovskite Passivation for Stable and Efficient Photovoltaics
Carbon Energy, EarlyView.Phase‐pure 2D interfacial passivation eliminates mixed‐phase energetic disorder, establishes favorable band alignment, and suppresses interfacial non‐radiative recombination. This review elucidates deterministic phase‐purity control, defect and lattice reconstruction mechanisms, and scalable manufacturing strategies, highlighting how phase‐pure 2D/3D ...
Ming‐Xin Li +9 more
wiley +1 more source
Self-Assembled Local Artificial Substrates of GaAs on Si Substrate
Nanoscale Research Letters, 2010 We propose a self-assembling procedure for the fabrication of GaAs islands by Droplet Epitaxy on silicon substrate. Controlling substrate temperature and amount of supplied gallium is possible to tune the base size of the islands from 70 up to 250 nm and
Frigeri C +4 more
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Spin properties in droplet epitaxy grown telecom quantum dots
Physical Review BWe investigate the spin properties of InAs/InGaAs/InP quantum dots grown by metalorganic vapor-phase epitaxy (MOVPE) deposition using droplet epitaxy, which emits in the telecom C band. Using pump-probe Faraday ellipticity measurements, we determine electron and hole g factors of |ge|=0.93 and |gh|=0.47, with the electron g factor being nearly twice as
Cizauskas, M. +5 more
openaire +3 more sources
Two‐Dimensional Piezoelectric Nanomaterials for Nanoelectronics and Energy Harvesting
ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.Two‐Dimensional Piezoelectric Nanomaterials from properties to applications. Smart materials, especially piezoelectric materials, have gained popularity over the last two decades. Two‐dimensional (2D) piezoelectric materials exhibit attributes including great flexibility, ease of workability, extensive surface area, and many active sites, indicating ...
Yujun Cao +12 more
wiley +1 more source
Surface Localization of Buried III–V Semiconductor Nanostructures
Nanoscale Research Letters, 2009 In this work, we study the top surface localization of InAs quantum dots once capped by a GaAs layer grown by molecular beam epitaxy. At the used growth conditions, the underneath nanostructures are revealed at the top surface as mounding features that ...
Alonso-González P +4 more
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