Results 201 to 210 of about 17,748 (263)

Water Monolayers: An Overlooked Loss Mechanism in Mid-Infrared Photonics

Jágerská J, Torres-Cubillo A, Feiler M, Zakoldaev R, Salaj J, Mestre N, Alberti S, Yallew H.   +7 more
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Improved Emitters by Dry Etching

2010
25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain; 1965 ...
Seiffe, Johannes, Khandelwal, R., Clement, C., Jäger, Ulrich, Hofmann, Marc, Rentsch, Jochen, Preu, Ralf   +6 more
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Dry etching of TiSi2

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1986
Dry etching studies of titanium disilicide films in CF4+O2 plasmas are reported. Thin films of TiSi2 were rf sputter deposited at room temperature on to bare single crystal silicon, SiO2, and CVD polysilicon substrates. The effect of the oxygen to CF4 ratio in the gas inlet on the composition of the plasma, on the etch rate, and etch anisotropy have ...
K. C. Cadien, S. Sivaram, C. D. Reintsema   +2 more
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Simulation of dry etch processes by COMPOSITE

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1988
Anetch simulator that allows modeling of dry etch processes by means of rates, fitting functions, and models is presented. Isotropic etching by chemically active neutrals, sputtering by energetic ions, and anisotropic etching by ion-induced chemistry can be considered.
Joachim Pelka, K. P. Muller, Hermann Mader   +2 more
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Dry etching of colloidal crystal films

Journal of Colloid and Interface Science, 2010
Two types of non-close-packed colloidal crystal films were prepared by etching the films made of polystyrene nanospheres using a hyperthermal neutral beam of oxygen gas. Etching without sintering above glass transition temperature of the polymer particles resulted in the non-close-packed structure of the nanospheres, in which polystyrene nanospheres in
Cho, YS Cho, Young-Sang, Yi, GR Yi, Gi-Ra, Moon, JH Moon, Jun Hyuk, Kim, DC Kim, Dae-Chul, Lee, BJ Lee, Bong-Ju, Yang, SM Yang, Seung-Man   +5 more
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Dry etched SiO2 Mask for HgCdTe Etching Process

Journal of Electronic Materials, 2016
A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices.
Y. Y. Chen, Z. H. Ye, C. H. Sun, L. G. Deng, S. Zhang, W. Xing, X. N. Hu, R. J. Ding, L. He   +8 more
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Dry etching of carbon layers in various etch gases

Vacuum, 2000
Abstract The C layers have been patterned by dry etching. The etch characteristics of this material in various etch gases were examined. The carbon structures with high aspect ratio were prepared. The high selectivity between the mask materials and carbon was obtained in H2 and O2.
Š Haščı́k, P Hrkút, I Kostič, A Konečnı́ková   +3 more
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A dry-etched inorganic resist

Applied Physics Letters, 1978
An as-deposited As2S3 thin film is employed as a negative working inorganic resist in lithographic applications. A CF4 plasma is used to etch differentially for pattern delineation. A maximum etch rate ratio of 1.8 between the unexposed and exposed films is obtained.
M. S. Chang, J. T. Chen
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Dry Etching (Part 1): Particulate Contamination Due to Dry Etching

1998
For the mass production of 64 kbit DRAMs, 3 μm design-rule devices, interest in the change from wet to dry etching processes has increased greatly.
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Molybdenum Taper Dry Etching

Journal of The Electrochemical Society, 1984
On propose une technique de gravure reactive des couches de molybdene avec des faces laterales en pente retrecissant la surface attaquee et elargissant la surface reservee. Caracteristiques de la gravure de couches minces de molybdene dopees par l'oxygene dans une decharge dans CCl 4 −O 2 . Vitesse d'attaque. A l'aide de ces caracteristiques on obtient
Tetsuo Hosoya, Shin‐ichi Ohfuji, Toshitaka Shibata   +2 more
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