Results 211 to 220 of about 17,748 (263)
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Dry Etching of MRAM Structures
MRS Proceedings, 2000ABSTRACTA wide variety of GMR and CMR materials have been patterned by high density plasma etching in both corrosive (Cl2-based) and non-corrosive (CO/NH3) plasma chemistries. The former produce much higher etch rates but require careful in-situ or ex-situ, post-etch cleaning to prevent corrosion of the metallic multilayers.
S.J. Pearton +5 more
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2014
Dry etching has been a key technology in the LSI manufacturing process, and the high integration of LSI would not have been realized without progress in this technology. However, because the process uses plasma, the devices are susceptible to various types of damages caused by high-energy and charged particles. A large amount of damage sometimes lowers
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Dry etching has been a key technology in the LSI manufacturing process, and the high integration of LSI would not have been realized without progress in this technology. However, because the process uses plasma, the devices are susceptible to various types of damages caused by high-energy and charged particles. A large amount of damage sometimes lowers
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2014
This chapter first reviews the history of dry etching equipment. Then it provides detailed discussions of the basic mechanisms of plasma generation, plasma density, operating pressure conditions, and key characteristics of dry etching equipment used in LSI manufacturing today, including the barrel-type plasma etcher, capacitively coupled plasma (CCP ...
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This chapter first reviews the history of dry etching equipment. Then it provides detailed discussions of the basic mechanisms of plasma generation, plasma density, operating pressure conditions, and key characteristics of dry etching equipment used in LSI manufacturing today, including the barrel-type plasma etcher, capacitively coupled plasma (CCP ...
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Mechanistic framework for dry etching, beam assisted etching and tribochemical etching
Microelectronic Engineering, 1996Abstract A mechanistic framework is presented for impact assisted etch reactions. The consecutive reaction steps are assumed to be activated thermally and in parallel mechanically by fast particle impacts. The model explains the complicated temperature dependencies observed in dry etching and beam assisted etching, and it correlates the side wall ...
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1989
The increase in complexity and the decrease in cost of solid state devices and integrated circuits over the past twenty-five years has been phenomenal. In large part, these trends have been made possible by a continual reduction in the minimum feature size of individual circuit elements.
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The increase in complexity and the decrease in cost of solid state devices and integrated circuits over the past twenty-five years has been phenomenal. In large part, these trends have been made possible by a continual reduction in the minimum feature size of individual circuit elements.
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Photochemical dry etching of GaAs
Applied Physics Letters, 1984GaAs exhibits greatly enhanced reactivity with gas-phase reactive Cl species when the surface is irradiated with low intensity laser light having a frequency which can excite above the band gap of GaAs. This laser-induced reactivity is shown to be photochemical rather than thermal in origin.
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2014
A guiding principle for designing a dry etching process has yet to be established. However, guidelines for designing a process may be obtained by examining the reaction processes. For that, one must first understand the mechanism of dry etching. This chapter starts with the basics of plasma and goes on to describe the dry etching reaction processes and
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A guiding principle for designing a dry etching process has yet to be established. However, guidelines for designing a process may be obtained by examining the reaction processes. For that, one must first understand the mechanism of dry etching. This chapter starts with the basics of plasma and goes on to describe the dry etching reaction processes and
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Dry Etching (Part 2): Influence of Chemical Contamination and Defects on Dry Etching
1998In this chapter, problems related to chemical contamination, defects and radiation damage are dealt with, and their influence on the etching characteristics and the reaction mechanism are discussed. Methods to improve the efficiency of dry etching can be classified as “physical methods” and “chemical methods”.
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Piezoelectric aluminum nitride thin-films: A review of wet and dry etching techniques
Microelectronic Engineering, 2022Ved Gund, Rui M R Pinto, Nagaraja K K
exaly