Results 71 to 80 of about 17,748 (263)

dry etching

open access: yes
Citation: 'dry etching' in the IUPAC Compendium of Chemical Terminology, 5th ed.; International Union of Pure and Applied Chemistry; 2025. Online version 5.0.0, 2025. 10.1351/goldbook.09489 • License: The IUPAC Gold Book is licensed under Creative Commons Attribution-ShareAlike CC BY-SA 4.0 International for individual terms ...
openaire   +1 more source

Bioactive Conductive Ti3C2Tx‐Ce Hydrogel Facilitates Spinal Cord Injury Repair Through ROS Scavenging and Mitochondrial Regulation

open access: yesAdvanced Functional Materials, EarlyView.
Bioactive conductive Ti3C2Tx‐Ce hydrogels with with scavenging ROS and alleviating neuronal mitochondrial dysfunction are exploited for SCI treatment. This functionality is attributed to interfacial activation modification of Ti3C2Tx with Ce3+ ions to in‐situ form Ce(OH)x‐mediated protective layer, which is beneficial to enabling stable intracellular ...
Weikang Wang   +12 more
wiley   +1 more source

Study on the performance of InGaN-based micro-LED by plasma etching combined with ion implantation process

open access: yesNext Nanotechnology
This study utilized blue-light epitaxial wafers and employed semiconductor processes such as maskless laser writing, dry etching, wet etching, passivation layer deposition, electron beam evaporation, and ion implantation to fabricate micro-light emitting
Yun-Cheng Hsu   +7 more
doaj   +1 more source

Effects of Mask Material on Lateral Undercut of Silicon Dry Etching. [PDF]

open access: yesMicromachines (Basel), 2023
Zhang Y   +8 more
europepmc   +1 more source

Furan‐Substituted Phosphine‐Oxide as an Efficient Interfacial Modifier for Wide‐Bandgap Perovskite Solar Cells

open access: yesAdvanced Functional Materials, EarlyView.
We report phosphine‐oxide interlayers for wide‐bandgap perovskite solar cells, in which tuned P = O Lewis basicity enables selective passivation of buried NiOx/perovskite interfaces and introduces interfacial dipoles that strengthen the built‐in field.
JeeHee Hong   +6 more
wiley   +1 more source

Electrical contact uniformity and surface oxidation of ternary chalcogenide alloys

open access: yesAIP Advances, 2019
Uniform metal contacts are critical for advanced thermoelectric devices. The uniformity of the contact resistance for gold, tungsten, and SrRuO3 electrodes on polycrystalline ternary Bi2Te3-based alloys for different types of surface cleaning procedures ...
P. A. Sharma   +9 more
doaj   +1 more source

In situ synchrotron X-ray scission of polytetrafluoroethylene chains and elucidation of dry etching. [PDF]

open access: yesHeliyon, 2023
Fujitani K   +6 more
europepmc   +1 more source

Wet and dry etching of Sc2O3

open access: yesApplied Surface Science, 2001
Abstract Wet chemical and plasma etch processes were developed for pattering of Sc2O3 films on GaN. Chlorine-based plasma chemistries produced a significant chemical enhancement of removal rate over pure Ar sputtering. The etching was anisotropic and did not significantly alter the surface composition of the Sc2O3 films.
Department of Materials Science and Engineering, University of Florida Rhines Hall, P.O. Box 116400, Gainesville, FL 32611, USA ( host institution )   +10 more
openaire   +2 more sources

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

open access: yesAdvanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu   +5 more
wiley   +1 more source

High Aspect Ratio Nanoscale Pores through BCP-Based Metal Oxide Masks and Advanced Dry Etching. [PDF]

open access: yesACS Appl Mater Interfaces, 2023
Esmeraldo Paiva A   +6 more
europepmc   +1 more source

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