Results 71 to 80 of about 17,748 (263)
Citation: 'dry etching' in the IUPAC Compendium of Chemical Terminology, 5th ed.; International Union of Pure and Applied Chemistry; 2025. Online version 5.0.0, 2025. 10.1351/goldbook.09489 • License: The IUPAC Gold Book is licensed under Creative Commons Attribution-ShareAlike CC BY-SA 4.0 International for individual terms ...
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Bioactive conductive Ti3C2Tx‐Ce hydrogels with with scavenging ROS and alleviating neuronal mitochondrial dysfunction are exploited for SCI treatment. This functionality is attributed to interfacial activation modification of Ti3C2Tx with Ce3+ ions to in‐situ form Ce(OH)x‐mediated protective layer, which is beneficial to enabling stable intracellular ...
Weikang Wang +12 more
wiley +1 more source
This study utilized blue-light epitaxial wafers and employed semiconductor processes such as maskless laser writing, dry etching, wet etching, passivation layer deposition, electron beam evaporation, and ion implantation to fabricate micro-light emitting
Yun-Cheng Hsu +7 more
doaj +1 more source
Effects of Mask Material on Lateral Undercut of Silicon Dry Etching. [PDF]
Zhang Y +8 more
europepmc +1 more source
We report phosphine‐oxide interlayers for wide‐bandgap perovskite solar cells, in which tuned P = O Lewis basicity enables selective passivation of buried NiOx/perovskite interfaces and introduces interfacial dipoles that strengthen the built‐in field.
JeeHee Hong +6 more
wiley +1 more source
Electrical contact uniformity and surface oxidation of ternary chalcogenide alloys
Uniform metal contacts are critical for advanced thermoelectric devices. The uniformity of the contact resistance for gold, tungsten, and SrRuO3 electrodes on polycrystalline ternary Bi2Te3-based alloys for different types of surface cleaning procedures ...
P. A. Sharma +9 more
doaj +1 more source
In situ synchrotron X-ray scission of polytetrafluoroethylene chains and elucidation of dry etching. [PDF]
Fujitani K +6 more
europepmc +1 more source
Abstract Wet chemical and plasma etch processes were developed for pattering of Sc2O3 films on GaN. Chlorine-based plasma chemistries produced a significant chemical enhancement of removal rate over pure Ar sputtering. The etching was anisotropic and did not significantly alter the surface composition of the Sc2O3 films.
Department of Materials Science and Engineering, University of Florida Rhines Hall, P.O. Box 116400, Gainesville, FL 32611, USA ( host institution ) +10 more
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Atomic Layer Deposition in Transistors and Monolithic 3D Integration
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu +5 more
wiley +1 more source
High Aspect Ratio Nanoscale Pores through BCP-Based Metal Oxide Masks and Advanced Dry Etching. [PDF]
Esmeraldo Paiva A +6 more
europepmc +1 more source

