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Degradation processes of 280 nm high power DUV LEDs: impact on parasitic luminescence [PDF]

Japanese Journal of Applied Physics, 2019
With this work we report on characterization and reliability analysis of 280 nm high power commercial LEDs emitting 18 mW at 200 mA, with a peak wavelength of 280 nm. Spectral characterization reports the presence of a main emission peak and a sideband peak separated by 0.8 eV.
Trivellin N., Monti D., Piva F., Buffolo M., De Santi C., Zanoni E., Meneghesso G., Meneghini M.   +7 more
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IQE and EQE of the nitride-based UV/DUV LEDs

CLEO:2011 - Laser Applications to Photonic Applications, 2011
Internal and external quantum efficiency and injection efficiency of nitride-based UV/DUV devices were investigated. Non radiative component in the photoluminescence and electroluminescence is found to be strongly correlated with the dislocation density.
H. Amano, G.J. Park, T. Tanikawa, Y. Honda, M. Yamaguchi, K. Ban, K. Nagata, K. Nonaka, K. Takeda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki   +12 more
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Thermal Management for DUV LEDs

2019
DUV LEDs possess very huge heating issue. On one hand, the sapphire substrate has a poor thermal conductivity, and on the other hand, DUV photons are easily absorbed by the absorptive p-GaN layer and the metal contact in the way of free carrier absorption, which further increases the self-heating effect for DUV LEDs.
Zi-Hui Zhang, Chunshuang Chu, Kangkai Tian, Yonghui Zhang   +3 more
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Improve the Current Spreading for DUV LEDs

2019
After the crystalline quality for Al-rich AlGaN layer is significantly improved, it is then the time to design novel DUV LED structures. DUV LEDs are driven electrically which get carrier transport and current injection involved. One of the challenges is the current crowding effect, which easily occurs in the DUV LEDs.
Zi-Hui Zhang, Chunshuang Chu, Kangkai Tian, Yonghui Zhang   +3 more
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The Light Extraction Efficiency for DUV LEDs

2019
DUV LEDs have very low light extraction efficiency (LEE), which is caused by the unique optical polarization and the optically absorptive semiconductor and metal layers. This chapter reviews and analyzes the approaches that have ever been used to improve the LEE.
Zi-Hui Zhang, Chunshuang Chu, Kangkai Tian, Yonghui Zhang   +3 more
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Enhanced Light Extraction From DUV-LEDs by AlN-Doped Fluoropolymer Encapsulation

IEEE Photonics Technology Letters, 2017
AlN-doped fluoropolymer encapsulation layer was proposed for deep-ultraviolet light-emitting diodes. The proposed method can significantly enhance the light extraction from the chip-on-board packaging structure, which is attributed to the increased refractive index and light scattering ability of the encapsulant layer by the doping of AlN nanoparticles
Yang Peng, Xin Guo, Renli Liang, Hao Cheng, Mingxiang Chen   +4 more
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Current induced degradation study on state of the art DUV LEDs

Microelectronics Reliability, 2018
Abstract We present the first comprehensive study of the degradation of 16 mW state of the art UVC LEDs emitting at 280 nm. The study, based on combined electrical and spectral characterization, allows to identify different degradation regimes and mechanisms, and to formulate hypotheses on their origin.
Trivellin, N., Monti, D., De Santi, C., Buffolo, M., Meneghesso, G., Zanoni, E., Meneghini, M.   +6 more
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Enhance the Electron Injection Efficiency for DUV LEDs

2019
The unbalanced carrier injection for DUV LEDs illustrates that the electron tends to overflow from the active region. The underly mechanism arises from three aspects: (1) electrons cannot be consumed by forming electron-hole pairs and recombine radiatively in the active region, which is due to the insufficient hole injection, (2) the electron have ...
Zi-Hui Zhang, Chunshuang Chu, Kangkai Tian, Yonghui Zhang   +3 more
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On the impact of a metal–insulator–semiconductor structured n-electrode for AlGaN-based DUV LEDs

Applied Optics, 2021
In this work, a 280 nm AlGaN-based deep ultraviolet light-emitting diode (DUV LED) with a metal–insulator–semiconductor (MIS) structured n-electrode is fabricated and studied. The S i O 2 insulator layer is adopted to form the MIS structure by using an atomic layer deposition system.
Hua Shao, Jiamang Che, Chunshuang Chu, Kangkai Tian, Yonghui Zhang, Xiaowei Sun, Zi-Hui Zhang   +6 more
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Improve the Hole Injection to Enhance the IQE for DUV LEDs

2019
The very low doping efficiency for the p-type Al-rich AlGaN layers indicates that the hole injection capability for DUV LEDs can be poor. Therefore, we ought to investigate the approaches to enable high-efficiency hole injection. In this chapter, we propose novel DUV LED architectures to make “hot” holes, increase the hole concentration in the p-type ...
Zi-Hui Zhang, Chunshuang Chu, Kangkai Tian, Yonghui Zhang   +3 more
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