Vertical Diamond p-n Junction Diode with Step Edge Termination Structure Designed by Simulation [PDF]
Micromachines, 2023 In this paper, diamond-based vertical p-n junction diodes with step edge termination are investigated using a Silvaco simulation (Version 5.0.10.R). Compared with the conventional p-n junction diode without termination, the step edge termination shows ...
Guangshuo Cai +6 more
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Design of Trench MIS Field Plate Structure for Edge Termination of GaN Vertical PN Diode [PDF]
Micromachines, 2023 In this study, we developed an analytic model to design a trench metal–insulator–semiconductor (MIS) field plate (FP) structure for the edge termination of a vertical GaN PN diode.
Sung-Hoon Lee, Ho-Young Cha
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Physical mechanism of field modulation effects in ion implanted edge termination of vertical GaN Schottky barrier diodes [PDF]
Fundamental Research, 2022 In this study, the physical properties of F ion-implanted GaN were thoroughly studied, and the related electric-field modulation mechanisms in ion-implanted edge termination were revealed.
Ruiyuan Yin +8 more
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Designs of Charge-Balanced Edge Termination Structures for 3.3 kV SiC Power Devices Using PN Multi-Epitaxial Layers [PDF]
MicromachinesWe demonstrated 3.3 kV silicon carbide (SiC) PiN diodes using a trenched ring-assisted junction termination extension (TRA-JTE) with PN multi-epitaxial layers.
Sangyeob Kim, Ogyun Seok
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High-Voltage β-Ga2O3 Schottky Diode with Argon-Implanted Edge Termination [PDF]
Nanoscale Research Letters, 2019 The edge-terminated Au/Ni/β-Ga2O3 Schottky barrier diodes were fabricated by using argon implantation to form the high-resistivity layers at the periphery of the anode contacts.
Yangyang Gao +12 more
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Edge-Termination and Core-Modification Effects of Hexagonal Nanosheet Graphene [PDF]
Molecules, 2014 Optimized geometries and electronic structures of two different hexagonal grapheme nanosheets (HGNSs), with armchair (n-A-HGNS, n = 3–11) and zigzag (n-Z-HGNS, n = 1–8) edges have been calculated by using the GGA/PBE method implemented in the SIESTA ...
Jin-Pei Deng +4 more
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Recent Developments and Challenges of Edge Termination Techniques for Vertical Diamond Schottky Barrier Diodes [PDF]
SensorsThanks to its excellent material properties, diamond-based power electronic devices have garnered widespread attention. The realization of large-sized (over 2 inches) and high-quality single-crystal diamond wafers has significantly accelerated the ...
Genzhuang Li +5 more
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Optimisation of Negative Fixed Charge Based Edge Termination for Vertical GaN Schottky Devices [PDF]
MicromachinesThis study focuses on the impact of negative fixed charge, achieved through fluorine (F) implantation, on breakdown voltage (BV) enhancement in vertical GaN Schottky diodes.
Vishwajeet Maurya +4 more
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Reversible Modification of Rashba States in Topological Insulators at Room Temperature by Edge Functionalization [PDF]
Advanced ScienceQuantum materials with novel spin textures from strong spin‐orbit coupling (SOC) are essential components for a wide array of proposed spintronic devices.
Wonhee Ko +9 more
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A contact detection algorithm for polyhedrons based on improved common-plane concept [PDF]
Scientific ReportsTo address the inaccuracies in contact point calculation and low computational efficiency of traditional common-plane methods in complex contact scenarios, this study proposes an improved contact detection algorithm based on the common-plane concept.
Mingqing Liu
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