Results 11 to 20 of about 37,664 (254)

Engineering the coordination environment of Ni and Pd dual active sites for promoting the oxygen reduction reaction [PDF]

open access: yesScientific Reports
Precisely regulating active sites is vital for promoting the oxygen reduction reaction (ORR) activity. Here we reported highly active Ni-Pd co-doped N-coordinated graphene towards ORR achieved by edge termination and O doping.
Lei Li   +5 more
doaj   +2 more sources

EDGE-NATIVE CABLE ACCESS NETWORK WITH UDP TERMINATION

open access: yesКомпютерні системи та інформаційні технології
This paper introduces a software-defined architectural model for modernizing upstream transport in hybrid fiber-coaxial networks through user-space UDP termination using the VPP HostStack.
Іван ІВАНЕЦЬ   +2 more
doaj   +2 more sources

Design and TCAD Simulation of GaN P-i-N Diode with Multi-Drift-Layer and Field-Plate Termination Structures [PDF]

open access: yesMicromachines
Vertical GaN P-i-N diodes exhibit excellent high-voltage performance, fast switching speed, and low conduction losses, making them highly attractive for power applications.
Zhibo Yang   +4 more
doaj   +2 more sources

Impact of Anode Thickness on Breakdown Mechanisms in Vertical GaN PiN Diodes with Planar Edge Termination

open access: yesCrystals, 2022
GaN vertical PiN diodes with different anode thicknesses were fabricated on three native GaN wafers with the same p-layer doping concentrations, and planar hybrid edge termination.
Mona A. Ebrish   +7 more
doaj   +1 more source

Edge termination design for 1.7 kV silicon carbide p-i-n diodes [PDF]

open access: yesBulletin of the Polish Academy of Sciences: Technical Sciences, 2020
In this work, in order to obtain breakdown voltage values of the 4H-SiC p-i-n diodes above 1.7kV, three designs have been examined: single-zone junction termination extention (JTE), double-zone JTE and a structure with concentric rings outside each of ...
A. Taube, M. Sochacki
doaj   +1 more source

Edge states in rationally terminated honeycomb structures

open access: yesProceedings of the National Academy of Sciences, 2022
Consider the tight binding model of graphene, sharply terminated along an edge l parallel to a direction of translational symmetry of the underlying period lattice. We classify such edges l into those of “zigzag type” and those of “armchair type,” generalizing the classical zigzag and armchair edges.
Fefferman, Charles   +2 more
openaire   +4 more sources

6 kV/180 °C High Temperature Reverse Bias Test Equipment for High Voltage and High Power Devices

open access: yesZhongguo dianli, 2021
High Temperature Reverse Bias (HTRB) test is an important part in reliability tests on IGBTs. The accuracy and function of the test equipment determine the accuracy of the performance monitoring of the tested device.
Erping DENG   +4 more
doaj   +1 more source

Experimentally Engineering the Edge Termination of Graphene Nanoribbons [PDF]

open access: yesACS Nano, 2012
The edges of graphene nanoribbons (GNRs) have attracted much interest due to their potentially strong influence on GNR electronic and magnetic properties. Here we report the ability to engineer the microscopic edge termination of high quality GNRs via hydrogen plasma etching.
Zhang, X.   +11 more
openaire   +3 more sources

Finding Maximum Edge-Disjoint Paths Between Multiple Terminals

open access: yesSIAM Journal on Computing, 2023
37 pages, 9 ...
Satoru Iwata, Yu Yokoi
openaire   +3 more sources

Design and Optimization of Vertical GaN PiN Diodes With Fluorine-Implanted Termination

open access: yesIEEE Journal of the Electron Devices Society, 2020
Gallium nitride (GaN)-based power devices enable high power density and high switching frequency for power electronics systems. For the emerging vertical GaN devices, the electric field crowding around the edge of the main junction could result in ...
Yuxin Liu, Shu Yang, Kuang Sheng
doaj   +1 more source

Home - About - Disclaimer - Privacy