Results 11 to 20 of about 37,664 (254)
Engineering the coordination environment of Ni and Pd dual active sites for promoting the oxygen reduction reaction [PDF]
Precisely regulating active sites is vital for promoting the oxygen reduction reaction (ORR) activity. Here we reported highly active Ni-Pd co-doped N-coordinated graphene towards ORR achieved by edge termination and O doping.
Lei Li +5 more
doaj +2 more sources
EDGE-NATIVE CABLE ACCESS NETWORK WITH UDP TERMINATION
This paper introduces a software-defined architectural model for modernizing upstream transport in hybrid fiber-coaxial networks through user-space UDP termination using the VPP HostStack.
Іван ІВАНЕЦЬ +2 more
doaj +2 more sources
Design and TCAD Simulation of GaN P-i-N Diode with Multi-Drift-Layer and Field-Plate Termination Structures [PDF]
Vertical GaN P-i-N diodes exhibit excellent high-voltage performance, fast switching speed, and low conduction losses, making them highly attractive for power applications.
Zhibo Yang +4 more
doaj +2 more sources
GaN vertical PiN diodes with different anode thicknesses were fabricated on three native GaN wafers with the same p-layer doping concentrations, and planar hybrid edge termination.
Mona A. Ebrish +7 more
doaj +1 more source
Edge termination design for 1.7 kV silicon carbide p-i-n diodes [PDF]
In this work, in order to obtain breakdown voltage values of the 4H-SiC p-i-n diodes above 1.7kV, three designs have been examined: single-zone junction termination extention (JTE), double-zone JTE and a structure with concentric rings outside each of ...
A. Taube, M. Sochacki
doaj +1 more source
Edge states in rationally terminated honeycomb structures
Consider the tight binding model of graphene, sharply terminated along an edge l parallel to a direction of translational symmetry of the underlying period lattice. We classify such edges l into those of “zigzag type” and those of “armchair type,” generalizing the classical zigzag and armchair edges.
Fefferman, Charles +2 more
openaire +4 more sources
6 kV/180 °C High Temperature Reverse Bias Test Equipment for High Voltage and High Power Devices
High Temperature Reverse Bias (HTRB) test is an important part in reliability tests on IGBTs. The accuracy and function of the test equipment determine the accuracy of the performance monitoring of the tested device.
Erping DENG +4 more
doaj +1 more source
Experimentally Engineering the Edge Termination of Graphene Nanoribbons [PDF]
The edges of graphene nanoribbons (GNRs) have attracted much interest due to their potentially strong influence on GNR electronic and magnetic properties. Here we report the ability to engineer the microscopic edge termination of high quality GNRs via hydrogen plasma etching.
Zhang, X. +11 more
openaire +3 more sources
Finding Maximum Edge-Disjoint Paths Between Multiple Terminals
37 pages, 9 ...
Satoru Iwata, Yu Yokoi
openaire +3 more sources
Design and Optimization of Vertical GaN PiN Diodes With Fluorine-Implanted Termination
Gallium nitride (GaN)-based power devices enable high power density and high switching frequency for power electronics systems. For the emerging vertical GaN devices, the electric field crowding around the edge of the main junction could result in ...
Yuxin Liu, Shu Yang, Kuang Sheng
doaj +1 more source

