Results 21 to 30 of about 37,664 (254)

Vertical GaN-on-GaN Schottky Barrier Diodes With Multi-Floating Metal Rings

open access: yesIEEE Journal of the Electron Devices Society, 2020
Vertical GaN Schottky barrier diodes (SBDs) with floating metal rings (FMRs) as edge termination structures have been fabricated on bulk GaN substrates.
Tsung-Han Yang   +10 more
doaj   +1 more source

Experimental observation of edge states in SSH-Stub photonic lattices

open access: yesPhysical Review Research, 2022
We reveal unconventional edge states in a one-dimensional Stub lattice of coupled waveguides with staggered hoppings. The edge states appear for the same values of hoppings as topological edge states in the Su-Schrieffer-Heeger model. They have different
Gabriel Cáceres-Aravena   +5 more
doaj   +1 more source

1.7-kV vertical GaN p-n diode with triple-zone graded junction termination extension formed by ion-implantation

open access: yese-Prime: Advances in Electrical Engineering, Electronics and Energy, 2023
Edge termination has emerged as an important area in the design and realization of vertical GaN power electronic devices. While the material properties of GaN are promising for high-performance devices, in practice the breakdown voltage can be ...
Yu Duan   +4 more
doaj   +1 more source

Study of a SiC Trench MOSFET Edge-Termination Structure with a Bottom Protection Well for a High Breakdown Voltage

open access: yesApplied Sciences, 2020
A novel edge-termination structure for a SiC trench metal−oxide semiconductor field-effect transistor (MOSFET) power device is proposed. The key feature of the proposed structure is a periodically formed SiC trench with a bottom protection well ...
Jee-Hun Jeong   +4 more
doaj   +1 more source

Electronic Transport Properties of Trigonal Graphene Nanoribbon with Different Edge Termination

open access: yesMATEC Web of Conferences, 2016
The electronic transport properties of trigonal graphene nanoribbon with different edge termination are studied with the first principle methods. It is found that edge termination plays an important role in electronic transport in these systems.
Liu Wen   +4 more
doaj   +1 more source

POLYLLA: polygonal meshing algorithm based on terminal-edge regions

open access: yesEngineering with Computers, 2022
This paper presents an algorithm to generate a new kind of polygonal mesh obtained from triangulations. Each polygon is built from a terminal-edge region surrounded by edges that are not the longest-edge of any of the two triangles that share them. The algorithm is termed Polylla and is divided into three phases.
Sergio Salinas-Fernández   +3 more
openaire   +3 more sources

Non-simplifying Graph Rewriting Termination [PDF]

open access: yesElectronic Proceedings in Theoretical Computer Science, 2013
So far, a very large amount of work in Natural Language Processing (NLP) rely on trees as the core mathematical structure to represent linguistic informations (e.g. in Chomsky's work).
Bruno Guillaume, Guillaume Bonfante
doaj   +1 more source

Wide Bandgap Vertical kV-Class β-Ga₂O₃/GaN Heterojunction p-n Power Diodes With Mesa Edge Termination

open access: yesIEEE Journal of the Electron Devices Society, 2022
Breakdown capability of ${\beta }$ -Ga2O3/GaN heterojunction-based vertical p-n power diodes with mesa edge termination (ET) was comprehensively investigated using TCAD simulation.
Dinusha Herath Mudiyanselage   +2 more
doaj   +1 more source

Near-critical supernova outflows and their neutrino signatures

open access: yesPhysics Letters B, 2022
We demonstrate that the neutrino-driven outflows inside exploding core-collapse supernovae possess a special property of near-criticality, that is, they are on the edge of forming termination shocks.
Alexander Friedland, Payel Mukhopadhyay
doaj   +1 more source

Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges

open access: yesMicromachines, 2018
In this paper, an edge termination structure, referred to as step-double-zone junction termination extension (Step-DZ-JTE), is proposed. Step-DZ-JTE further improves the distribution of the electric field (EF) by its own step shape. Step-DZ-JTE and other
Yifei Huang   +5 more
doaj   +1 more source

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