Results 51 to 60 of about 7,264,350 (237)

Architecture‐Driven Functional Coupling in Vertically Aligned Nanocomposites

open access: yesAdvanced Functional Materials, EarlyView.
Vertically aligned nanocomposites define a growth‐engineered architecture in which vertical interfaces, strain fields, defect pathways, and phase connectivity are created simultaneously. This review shows how these architectural features couple ferroic, optical, ionic, electrochemical, and device responses, establishing design rules and open challenges
Md Shatil Islam‐Shanto   +4 more
wiley   +1 more source

Design and analysis of innovative multi-frequency ultrasonic probe characteristics

open access: yesScientific Reports
This study presents the development of a novel multifrequency ultrasound probe distinguished by its broad bandwidth and high sensitivity. A comprehensive investigation was conducted using theoretical analysis, numerical simulations, and experimental ...
Yu-Lin Song   +3 more
doaj   +1 more source

Effect of Filling Material Properties on 1-3 Piezoelectric Composite Performance

open access: yesMicromachines
The 1-3 piezoelectric composite is the key component of the acoustic transducer, which is widely used in detection, due to the high energy conversion efficiency, cheap raw material, and low aging. To reveal the influence of epoxy mixture, used to connect
Yao Liu   +3 more
doaj   +1 more source

A Simple Dynamic Characterization Method for Thin Stacked Dielectric Elastomer Actuators by Suspending a Weight in Air and Electrical Excitation

open access: yesActuators, 2021
This paper proposes a simple but effective method for characterizing dielectric elastomer actuators (DEAs), especially for thin stacked DEAs, which are promising for haptic devices but which measure the dynamic elastic modulus with great difficulty.
Kentaro Takagi   +2 more
doaj   +1 more source

Analysis of electromechanical coupling coefficient of surface acoustic wave resonator in ZnO piezoelectric thin film structure

open access: yes, 2014
An analysis of the electromechanical coupling coefficient for surface acoustic wave (SAW) devices developed in complementary metal oxide semiconductor (CMOS) is presented in this work.
Md Ralib @ Md Raghib, Aliza 'Aini   +3 more
core   +1 more source

Sub‐Nanometer Curvature Unlocks Quantum Orbital Flexoelectricity in Graphene

open access: yesAdvanced Materials, EarlyView.
In self‐assembled, reproducible, large‐area, quasi‐pristine graphene nanowrinkles, extreme curvature forces out‐of‐plane π‐electrons toward hybridization, driving a transition from classical to quantum orbital flexoelectricity. As curvature approaches the fundamental physical limit set by the C─C bond length, the resulting polarization increases by ...
Sathvik Ajay Iyengar   +8 more
wiley   +1 more source

Above Room Temperature Ferroelectricity in Epitaxially Strained KTaO3

open access: yesAdvanced Materials, EarlyView.
Through precise epitaxial engineering, the cubic and paraelectric KTaO3${\rm KTaO}_3$ is transformed into a robust ferroelectric. By leveraging lattice‐mismatched substrates to apply controlled epitaxial strain, a stable ferroelectric ground‐state is achieved with a transition temperature as high as 475 K, establishing KTaO3${\rm KTaO}_3$ as a highly ...
Tobias Schwaigert   +11 more
wiley   +1 more source

Preparation, Characterization, and Application of AlN/ScAlN Composite Thin Films

open access: yesMicromachines, 2023
Piezoelectric aluminum nitride (AlN) thin film, as a commonly used material for high-frequency acoustic resonators, has been a research hotspot in the RF field. Doping Sc elements in AlN is one of most effective methods to improve the piezoelectricity of
Laixia Nian   +8 more
doaj   +1 more source

Direct Growth of 2D Bilayers on Au(111) for Low‐Coercive Sliding Ferroelectricity

open access: yesAdvanced Materials, EarlyView.
Controlled CVD growth of stacking‐defined bilayer ReS2 on Au(111) enables parallel‐stacked bilayers with intrinsic sliding ferroelectricity, a strong piezoelectric response, and an ultralow coercive voltage. Atomic‐resolution imaging and in situ measurements further reveal the decisive role of clean interfaces in achieving low‐barrier ferroelectric ...
Honglin Chen   +7 more
wiley   +1 more source

Polar Wurtzite NbAlN: A Transition‐Metal Nitride Alloy for Polarization‐Engineered GaN Heterostructures

open access: yesAdvanced Materials, EarlyView.
A novel polar wurtzite alloy, NbAlN, is demonstrated as a transition‐metal‐containing polar barrier for GaN heterostructures. Nb atoms form coherent nanoscale enrichment within the wurtzite lattice without disrupting metal polarity. This study demonstrates that transition metals can be integrated into polar nitrides to enable polarization‐related ...
Atsushi Kobayashi   +12 more
wiley   +1 more source

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