Results 211 to 220 of about 219,266 (297)

Temperature‐Induced Nonvolatile Switching through Thermal Hysteresis in a Gd3Fe5O12/Ho3Fe5O12 Exchange‐Coupled Rare‐Earth Iron Garnet Bilayer

Advanced Functional Materials, EarlyView.
Reducing power consumption in spintronic memory remains a major challenge due to the need for high current densities. A bilayer of gadolinium and holmium iron garnets enables purely temperature‐induced, nonvolatile magnetic switching with bistable states within a ±25 K range. This approach achieves up to 66‐fold lower energy use than current spin–orbit
Junseok Kim, Phuoc Cao Van, Jong‐Ryul Jeong, Hyungyu Jin   +3 more
wiley   +1 more source

Divergent TCR-Initiated Calcium Signals Govern Recruitment versus Activation of Human Alloreactive Effector Memory T Cells by Endothelial Cells. [PDF]

J Immunol, 2018
Manes TD, Wang V, Pober JS.
europepmc   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Unique phenotypes and clonal expansions of human CD4 effector memory T cells re-expressing CD45RA. [PDF]

Nat Commun, 2017
Tian Y, Babor M, Lane J, Schulten V, Patil VS, Seumois G, Rosales SL, Fu Z, Picarda G, Burel J, Zapardiel-Gonzalo J, Tennekoon RN, De Silva AD, Premawansa S, Premawansa G, Wijewickrama A, Greenbaum JA, Vijayanand P, Weiskopf D, Sette A, Peters B.   +20 more
europepmc   +1 more source

A New Threshold Switching Device With Tunable Negative Differential Resistance Based on ErMnO3 Polymorphs

Advanced Functional Materials, EarlyView.
Polymorph engineering in ErMnO3 enables low‐voltage, forming‐free threshold switching with tunable negative differential resistance. Conducting orthorhombic regions embedded in an insulating hexagonal matrix provide controlled Joule‐heating‐enhanced Poole–Frenkel transport. The hexagonal phase prevents excessive heating and breakdown.
Rong Wu, Florian Maudet, Thanh Luan Phan, Wassim Hamouda, Richard Schroedter, Ahmet Samil Demirkol, Ronald Tetzlaff, Veeresh Deshpande, Catherine Dubourdieu   +8 more
wiley   +1 more source

Activation of central/effector memory T cells and T-helper 1 polarization in malignant melanoma patients treated with anti-programmed death-1 antibody. [PDF]

Cancer Sci, 2018
Yamaguchi K, Mishima K, Ohmura H, Hanamura F, Ito M, Nakano M, Tsuchihashi K, Ota SI, Wada N, Uchi H, Ariyama H, Kusaba H, Niiro H, Akashi K, Baba E.   +14 more
europepmc   +1 more source

2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics

Advanced Functional Materials, EarlyView.
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit, Yifei Yang, Shawn Li, Yu‐Chia Chen, Qi Jia, Jian‐Ping Wang   +5 more
wiley   +1 more source

A Chronic Autoimmune Dry Eye Rat Model with Increase in Effector Memory T Cells in Eyeball Tissue. [PDF]

J Vis Exp, 2017
Hou A, Bose T, Chandy KG, Tong L.
europepmc   +1 more source

Intrinsic Nanopore‐Assisted SnP2S6 Memristors With Ti Ion Dynamics for Compact Logic‐In‐Memory Hardware

Advanced Functional Materials, EarlyView.
Tin hexathiophosphate memristors leverage intrinsic nanopores together with a guided filament formation strategy to regulate titanium ion motion and switching behavior. The devices support reliable nonvolatile memory and reconfigurable logic‐in‐memory, demonstrating 14 Boolean logic functions in a single cell.
Thaw Tint Te Tun, Sanchali Mitra, Hongxi Su, Jiali Huo, Haofei Zheng, Michel Bosman, Yee Sin Ang, Kah‐Wee Ang   +7 more
wiley   +1 more source

Identification of pertussis-specific effector memory T cells in preschool children. [PDF]

Clin Vaccine Immunol, 2015
de Rond L, Schure RM, Öztürk K, Berbers G, Sanders E, van Twillert I, Carollo M, Mascart F, Ausiello CM, van Els CA, Smits K, Buisman AM.   +11 more
europepmc   +1 more source