Results 11 to 20 of about 643 (201)
SOS Electrical Overstress Investigations.
, 1978 Abstract : The SOS Electrical Overstress Investigations program was initiated to isolate the mechanisms of second breakdown. Tests conducted at Auburn University identified the need for test diodes with specified inherent silicon properties and controlled sets of processed 'defects'.
Larry G. Green
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Electrical Overstress of Nonencapsulated Aluminum Bond Wires
27th Annual Proceedings., International Reliability Physics Symposium, 1989 Electrical overstress of nonencapsulated aluminum bond wires is studied by several methods. Time-to-failure experiments, strobe microphotography, and thermal finite-element modeling are used to examine the overstress process. Computer simulations then provide approximate solutions to a more general case.
Joseph Lusk +2 more
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Review on Failure Mode and Mechanism of Press-Pack IGBT and Thyristor Devices
Zhongguo dianli, 2023 High voltage and large capacity press-pack insulated gate bipolar transistor (IGBT) devices and thyristor devices are the core devices in high-voltage DC transmission projects, which are of great significance for the efficient use of energy.
Haoze LUO +5 more
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Electrical Overstress Failure Analysis in Microcircuits
16th International Reliability Physics Symposium, 1978 J. S. Smith
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TFET-Based Voltage Detector: Proposal and Investigation
IEEE Access, 2020 In this paper, a tunnel field-effect transistor (TFET)-based voltage detector is proposed and its electrical characteristics are investigated using technology computer-aided design (TCAD) simulation.
Zhaonian Yang, Panqi Gao
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Preliminary Multiphysics Modeling of Electric High-Voltage Cable of Offshore Wind-Farms
Energies, 2023 During manufacture, handling, transportation, installation and operation, mechanical overstress can affect the electrical and thermal properties of the conductor. As the wires in general are made of copper, which is a very plastically deforming material,
Fouad Ech-Cheikh +2 more
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Semiconductors (LEDs) quality control based in high-resolution 3D X-ray microscope
Brazilian Journal of Radiation Sciences, 2022 Electronic devices are getting smaller each time and the technology, increasingly complex. Commonly found problems such as reflow soldering and open solder connections, which are mostly difficult to detect by conventional means like X-ray images or ...
Diogo da Costa +5 more
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Evolution, Revolution, and Technology Scaling—The Impact on ESD and EOS Reliability
Frontiers in Materials, 2018 In the scaling of semiconductor devices, evolutionary and revolutionary modifications are made in the device dimension, structural changes, and dimensions.
Steven H. Voldman
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Towards diamond micro four-point probes
Micro and Nano Engineering, 2019 Diamond has extreme physical properties, and it is used for critical applications in micro- and nanotechnology and nanosciences. Micro four-point probes for electrical characterization of metal and semiconductor thin-films are made from metal coated ...
Anpan Han +4 more
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Reliability Assessment of IGBT Through Modelling and Experimental Testing
IEEE Access, 2020 Lifetime of power electronic devices, in particular those used for wind turbines, is short due to the generation of thermal stresses in their switching device e.g., IGBT particularly in the case of high switching frequency.
Mominul Ahsan +3 more
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