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Low Voltage Electron Beam Lithography
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1992Abstract : In order to measure the energy spread of electrons emitted from various negative electron affinity cathode structures, a simple apparatus using a uniform retarding field inside night vision tubes and customized tubes (all made by Intevac) was constructed and initial measurements performed.
R. F. Pease, R. Browning
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Contemporary Physics, 1981
Abstract Electron beam lithography means writing patterns in thin films of electron sensitive material using a finely focused (sub-micrometre diameter) electron beam. By combining electrical scanning with interferometrically monitored mechanical motion, very complex patterns can be generated with great accuracy; for example, a pattern containing one ...
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Abstract Electron beam lithography means writing patterns in thin films of electron sensitive material using a finely focused (sub-micrometre diameter) electron beam. By combining electrical scanning with interferometrically monitored mechanical motion, very complex patterns can be generated with great accuracy; for example, a pattern containing one ...
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Electron beam array lithography
Journal of Vacuum Science and Technology, 1981Electron-beam array lithography (EBAL) uses array optics to expose 108 to 1010 resolution elements without mechanical motion. The array optics are based on the use of a first stage of deflection (coarse deflection) which selects one of an array of lenslets.
D. O. Smith, K. J. Harte
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2012
Obtaining sub-20 nm lithography is not straightforward, even using a good tool with a sub-5 nm beam size. In this section, a brief overview of the various topics that will be covered in more depth in the rest of the chapter is given.
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Obtaining sub-20 nm lithography is not straightforward, even using a good tool with a sub-5 nm beam size. In this section, a brief overview of the various topics that will be covered in more depth in the rest of the chapter is given.
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Multiple electron-beam lithography
Microelectronic Engineering, 2001A number of multiple electron-beam approaches are currently under evaluation for sub-100-nm lithography. These approaches offer the potential of improving throughput for direct wafer writing and mask patterning and could have far reaching implications for the semiconductor industry.
T.H.P. Chang +3 more
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Journal of Vacuum Science and Technology, 1982
Electron beam lithography has become the principal production method for fabricating integrated circuit masks and reticles for 1–1 projection printing and for direct step‐on‐wafer exposure. This has been the result of improved quality, lower cost, and high speed in writing patterns that are doubling in complexity every year.
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Electron beam lithography has become the principal production method for fabricating integrated circuit masks and reticles for 1–1 projection printing and for direct step‐on‐wafer exposure. This has been the result of improved quality, lower cost, and high speed in writing patterns that are doubling in complexity every year.
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Electron beam photoresists for nanoimprint lithography
Microelectronic Engineering, 2002Abstract Polymer selection and critical dimension (CD) pattern uniformity across the wafer are key parameters for the nanoimprint lithography technique. This nanotechnology requires polymers having a low glass transition temperature (Tg) combined with a good etch resistance.
Gourgon, C., Perret, C., Micouin, G.
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Electron-beam lithography for small MOSFET's
IEEE Transactions on Electron Devices, 1980Electron-beam lithography with a novel multilevel resist structure together with two-dimensional process and device modeling and dry processing with reactive sputter etching have been employed to produce silicon-gate NMOS devices with micrometer and submicrometer channel lengths. Results for transistors and ring oscillators are reported.
R.K. Watts +4 more
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1986
To develop greater LSIs, it is necessary to increase the number of pattern elements per unit area by reducing circuit patterns. The increase of pattern elements per chip needs high-speed pattern writing. The electron-beam lithography system has stepped into the limelight as one of the systems for meeting the demand of fine and high-speed writing.
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To develop greater LSIs, it is necessary to increase the number of pattern elements per unit area by reducing circuit patterns. The increase of pattern elements per chip needs high-speed pattern writing. The electron-beam lithography system has stepped into the limelight as one of the systems for meeting the demand of fine and high-speed writing.
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High voltage electron beam lithography
Microelectronic Engineering, 1983Abstract The advantage of high voltage electron beam lithography in submicron VLSI fabrication is outlined. Continuously-moving-stage EB systems with small deflection width are suited to high voltage electron beam machines. At 50 kV, the following experimental results were obtained: 1. (1) 0.75 μm lines of PMMA are formed on a 0.8 μm step. 2.
Tadahiro Takigawa +3 more
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