Results 11 to 20 of about 61,047 (214)

The detection of buried nanopillar based on electrostatic force microscopy simulation

open access: yesAIP Advances, 2022
Based on electrostatic force microscopy (EFM), the image of nano-objects buried below the surface was numerically simulated by using COMSOL Multiphysics® software.
Yongzhen Luo   +3 more
doaj   +1 more source

Measurement of electrostatic tip–sample interactions by time-domain Kelvin probe force microscopy

open access: yesBeilstein Journal of Nanotechnology, 2020
Kelvin probe force microscopy is a scanning probe technique used to quantify the local electrostatic potential of a surface. In common implementations, the bias voltage between the tip and the sample is modulated.
Christian Ritz   +2 more
doaj   +1 more source

Distinguishing magnetic and electrostatic interactions by a Kelvin probe force microscopy–magnetic force microscopy combination

open access: yesBeilstein Journal of Nanotechnology, 2011
The most outstanding feature of scanning force microscopy (SFM) is its capability to detect various different short and long range interactions.
Miriam Jaafar   +5 more
doaj   +1 more source

Scanning Probe Spectroscopy of WS2/Graphene Van Der Waals Heterostructures

open access: yesNanomaterials, 2020
In this paper, we present a study of tungsten disulfide (WS2) two-dimensional (2D) crystals, grown on epitaxial Graphene. In particular, we have employed scanning electron microscopy (SEM) and µRaman spectroscopy combined with multifunctional scanning ...
Franco Dinelli   +5 more
doaj   +1 more source

Determination of electrical parameters of individual multiwalled carbon nanotube using scanning probe microscopy techniques [PDF]

open access: yesОмский научный вестник, 2018
Based on the combination of conductive atomic force microscopy (C-AFM) and electrostatic force microscopy (EFM), the electrical parameters of undoped, nitrogen- and boron-doped individual multiwalled carbon nanotubes (CNTs) have been determined.
D. V. Sokolov   +2 more
doaj   +1 more source

Calculating electrostatic interactions in atomic force microscopy with semiconductor samples

open access: yesAIP Advances, 2019
Electrostatic interactions are important in non-contact atomic force microscopy (AFM) measurement. Previous reports had focused on the calculation of electrostatic interactions in AFM with metal and dielectric samples, and the present work extended the ...
Jie Xu, Jinze Li, Wei Li
doaj   +1 more source

Quantitative characterization of dielectric properties of nanoparticles using electrostatic force microscopy

open access: yesAIP Advances, 2020
We use a new method based on Electrostatic Force Microscopy (EFM) to perform quantitative measurements of the dielectric constants of individual carboxylated as well as non-functionalized polystyrene nanospheres. The EFM data record the oscillation phase
Marc Descoteaux   +2 more
doaj   +1 more source

Advanced atomic force microscopy-based techniques for nanoscale characterization of switching devices for emerging neuromorphic applications

open access: yesApplied Microscopy, 2021
Neuromorphic systems require integrated structures with high-density memory and selector devices to avoid interference and recognition errors between neighboring memory cells. To improve the performance of a selector device, it is important to understand
Young-Min Kim   +4 more
doaj   +1 more source

Electrostatic Force Microscopy Measurement System for Micro-topography of Non-conductive Devices

open access: yesMeasurement Science Review, 2018
A home-made electrostatic force microscopy (EFM) system is described which is directed toward assessment of the microscopic geometry of the surface of specimens made of non-conductive material with a large thickness. This system is based on the variation
He Gaofa   +3 more
doaj   +1 more source

High–low Kelvin probe force spectroscopy for measuring the interface state density

open access: yesBeilstein Journal of Nanotechnology, 2023
The recently proposed high–low Kelvin probe force microscopy (KPFM) enables evaluation of the effects of semiconductor interface states with high spatial resolution using high and low AC bias frequencies compared with the cutoff frequency of the carrier ...
Ryo Izumi   +3 more
doaj   +1 more source

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