Results 191 to 200 of about 55,978 (270)

Area-Selective Atomic Layer Deposition through Selective Passivation of SiO<sub>2</sub> with a SF<sub>6</sub>/H<sub>2</sub> Plasma. [PDF]

open access: yesChem Mater
Bolkenbaas OCA   +6 more
europepmc   +1 more source

Revisiting Photovoltaic Module Antireflection Coatings: A Novel, Dense Sol–Gel Design to Address Long‐Standing Durability Limitations

open access: yesProgress in Photovoltaics: Research and Applications, EarlyView.
The paper presents a novel five‐layer antireflective coating (5LARC) that significantly improves the optical performance and durability of photovoltaic modules over traditional single‐layer coatings. This is demonstrated through minimal abrasion damage and reduced transmission loss in environmental testing.
Yiyu Zeng   +8 more
wiley   +1 more source

Adsorption-Induced Optical Modulation in ZIF Thin Film Stacks with Distinct Order for Photonic Crystal Applications. [PDF]

open access: yesACS Appl Mater Interfaces
Keppler NC   +6 more
europepmc   +1 more source

Modeling of Polarization‐Selective Light‐Coupling in Quantum Well Infrared Photodetectors with Small Pixel Sizes

open access: yesphysica status solidi (a), EarlyView.
Polarization‐selective absorption in quantum well infrared photodetectors is studied by 2D and 3D finite‐element method simulations. The developed sub‐30&μm pixel pitch model is validated using experimental absorption data. Factors affecting the simulated absorption and polarization‐selectivity are explored.
Linnéa Bendrot   +15 more
wiley   +1 more source

Electrochemically Driven Optical Dynamics of Reflectin Protein Films. [PDF]

open access: yesAdv Mater
Lin YC   +6 more
europepmc   +1 more source

Extreme Bandgap Recessed‐Gate Metal Oxide Semiconductor Heterostructure Field Effect Transistors with Drain Current 0.28 A mm−1 and Threshold Voltage −1.5 V

open access: yesphysica status solidi (a), EarlyView.
Hybrid high‐k oxide (ZrO2‐Al2O3) incorporation in extreme bandgap (EBG) Al0.87Ga0.13N/Al0.64Ga0.36N metal‐oxide‐semiconductor heterostructure field‐effect transistors (MOSHFETs) with planar and recessed‐gate designs on the same AlN/sapphire template improves channel control, resulting in a threshold voltage shift of ΔVTH = 5.8 V.
Abdullah Al Mamun Mazumder   +6 more
wiley   +1 more source

Plasmon-exciton polaritonic emission lifetime dynamics under strong coupling. [PDF]

open access: yesNanophotonics
Jurkšaitis P   +7 more
europepmc   +1 more source

Interferometric snapshot spectro-ellipsometry

open access: gold, 2018
Vamara Dembele   +4 more
openalex   +1 more source

Optical Properties of Aluminum Nitride Thin Films Prepared by Magnetron Sputter Epitaxy

open access: yesphysica status solidi (a), EarlyView.
This study investigates aluminum nitride (AlN) thin films sputtered on various substrates. The findings indicate that crystal quality and impurity levels (oxygen and carbon) strongly influence optical absorption. AlN on Si(111) exhibits the lowest absorption.
Balasubramanian Sundarapandian   +5 more
wiley   +1 more source

Home - About - Disclaimer - Privacy