Results 201 to 210 of about 55,978 (270)

Heteroepitaxial Cubic (111) Zn2GeO4 Ultrawide Bandgap Semiconductor Thin Films Grown on Cubic (111) MgAl2O4 Substrates by Pulsed Laser Deposition

open access: yesphysica status solidi (RRL) – Rapid Research Letters, EarlyView.
Using a Zn‐rich target in pulsed laser deposition is demonstrated to successfully achieve the heteroepitaxial growth of ultrawide bandgap cubic spinel (111) Zn2GeO4 semiconductor thin films on cubic spinel (111) MgAl2O4 substrates. This study advances the fundamental research on UV transparent cubic spinel Zn2GeO4 conducting thin films in view of ...
Jingjing Yu   +4 more
wiley   +1 more source

Spectroscopic ellipsometry and band structure of Si{sub 1{minus}y}C{sub y} alloys grown pseudomorphically on Si (001)

open access: green, 1995
Stefan Zollner   +5 more
openalex   +2 more sources

Combinatorial Synthesis and Characterization of CuBrxI1–x Using a Segmented Target Approach for Pulsed Laser Deposition

open access: yesphysica status solidi (RRL) – Rapid Research Letters, EarlyView.
The alloy system CuBrxI1−x is grown by pulsed laser deposition. The structural, optical, and electrical properties of thin films on glass and c‐sapphire are presented. Radial and azimuthal target segmentation allow the fabrication of homogeneous films and a material library with a continuous composition spread, respectively.
Michael Sebastian Bar   +4 more
wiley   +1 more source

Toward Ultrawide Bandgap Engineering: Physical Properties of an α‐(TixGa1−x)2O3 Material Library

open access: yesphysica status solidi (RRL) – Rapid Research Letters, EarlyView.
The material system α‐(TixGa1−x)2O3 has potential applications in optoelectronics as it theoretically offers a bandgap tunable over a wide range from 0.14 to 5.6 eV. In the present work, spatially addressable material libraries of (TixGa1−x)yOz are realized using combinatorial material synthesis.
Clemens Petersen   +6 more
wiley   +1 more source

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