Results 201 to 210 of about 55,978 (270)
Bandgap of Epitaxial Single-Crystal BiFe<sub>1-x</sub>Mn<sub>x</sub>O<sub>3</sub> Films Grown Directly on SrTiO<sub>3</sub>/Si(001). [PDF]
Cantrell SR +4 more
europepmc +1 more source
Using a Zn‐rich target in pulsed laser deposition is demonstrated to successfully achieve the heteroepitaxial growth of ultrawide bandgap cubic spinel (111) Zn2GeO4 semiconductor thin films on cubic spinel (111) MgAl2O4 substrates. This study advances the fundamental research on UV transparent cubic spinel Zn2GeO4 conducting thin films in view of ...
Jingjing Yu +4 more
wiley +1 more source
The alloy system CuBrxI1−x is grown by pulsed laser deposition. The structural, optical, and electrical properties of thin films on glass and c‐sapphire are presented. Radial and azimuthal target segmentation allow the fabrication of homogeneous films and a material library with a continuous composition spread, respectively.
Michael Sebastian Bar +4 more
wiley +1 more source
Nanoscale monitoring of the initial stage of water condensation on a printed circuit board. [PDF]
Romanenko A +3 more
europepmc +1 more source
Toward Ultrawide Bandgap Engineering: Physical Properties of an α‐(TixGa1−x)2O3 Material Library
The material system α‐(TixGa1−x)2O3 has potential applications in optoelectronics as it theoretically offers a bandgap tunable over a wide range from 0.14 to 5.6 eV. In the present work, spatially addressable material libraries of (TixGa1−x)yOz are realized using combinatorial material synthesis.
Clemens Petersen +6 more
wiley +1 more source
Non-Destructive Ellipsometric Analysis of the Refractive Index of Historical Enamels. [PDF]
Palomar T, Pradell T, Mosa J.
europepmc +1 more source

