Results 191 to 200 of about 99,173 (297)

Epitaxial Growth of β‑Ga₂O₃ Thin Films on α‑Al₂O₃ Substrates via Two-Step Metal-Organic Chemical Vapor Deposition: Influence of Growth Temperature on Crystallinity and Interface Formation. [PDF]

ACS Omega
Chen WC, Wang WL, Chiu KA, Chen HP, Lin YW, Yin CE, Chang L, Chen FZ.   +7 more
europepmc   +1 more source

Wafer‐Scale Bandgap‐Tunable MoS2/PbS Phototransistors Enabled by Solution Processing

Advanced Science, EarlyView.
This work advances bandgap‐tunable MoS2/PbS phototransistors by introducing lateral heterojunctions, which enable superior tunable bandgap (1.24–0.61 eV) via Type‐II alignment. Plasma‐enhanced solution processing ensures uniform 4‐inch wafer‐scale fabrication with 97% yield.
Ziheng Tang, Chengqian Cui, Xiaoli Jing, Rui You, Mingjun Zhang, Jing Xu   +5 more
wiley   +1 more source

Epitaxial Growth of 2D Core-Crown SnS₂/SnSe₂ Heterostructure Through Interfacial Modification with Polyvinylpyrrolidone. [PDF]

Small
Liu L, Song D, Kaiser ME, Liu J, De Yoreo JJ, Sushko ML.   +5 more
europepmc   +1 more source

Direct Probing of Trap Dynamics in β‐Ga2O3 Schottky Barrier Diodes Using Single‐Voltage‐Pulse Characterization

Advanced Science, EarlyView.
A single‐pulse approach uncovers trap dynamics in β‐Ga2O3 Schottky barrier diodes. Transient current profiling reveals rapid electron capture, delayed trap filling, and clear thermal effects. Extracted trap densities, capture time constants, and activation energies indicate that this simple pulse technique enables effective evaluation of trap states ...
Thanh Huong Vo, Sunjae Kim, Ji‐Hyeon Park, Dae‐Woo Jeon, Wan Sik Hwang, Jinyoung Hwang   +5 more
wiley   +1 more source

Surface Planarization-Epitaxial Growth Enables Uniform 2D/3D Heterojunctions for Efficient and Stable Perovskite Solar Modules. [PDF]

Adv Sci (Weinh)
Lin D, Fang J, Li S, Zhan Z, Li H, Wang X, Xie G, Wang D, Huang N, Peng H, Xie W, Ono LK, Qi Y, Qiu L.   +13 more
europepmc   +1 more source

Large Anomalous Hall Effect, Non‐Vanishing Berry Curvature in (110) FeRh Antiferromagnet Films via Interface Strain

Advanced Science, EarlyView.
This study demonstrates a strain‐tunable anomalous Hall response in the (110)‐oriented FeRh thin film. First‐principles calculations reveal that strain‐induced symmetry lowering redistributes Berry curvature near the Fermi level via band shifts and avoided crossings.
Yun‐Ho Kim, Gil‐Sung Kim, Jae Won Choi, Jung‐Min Cho, Won‐Yong Lee, Hongkee Yoon, Yeonho Choi, Shelby Fields, Steven Bennett, Mona Zebarjadi, Young‐Gui Yoon, Sang‐Kwon Lee   +11 more
wiley   +1 more source

Microwaves induced epitaxial growth of urchin like MIL-53(Al) crystals on ceramic supports. [PDF]

Sci Rep
Ben Neon L, Drobek M, Bechelany M, Rebiere B, Julbe A.   +4 more
europepmc   +1 more source

Orientation‐Dependent Phase Transformation Pathways Enabling Superior Superelastic and Elastocaloric Performance of NiTi Alloys

Advanced Science, EarlyView.
By integrating simulations and experiments, the preferred (001) crystallographic texture promotes reversible martensite formation through variant selection, enhancing both superelastic and elastocaloric performance. This work provides fundamental guidelines for designing high‐efficiency NiTi‐based functional materials. Abstract Developing elastocaloric
Jiaqi Lu, Muhammad Aziz, Hao Li, Chi Zhang, Zhifeng Huang, Fei Chen   +5 more
wiley   +1 more source

Facile Epitaxial Growth of Novel Nanoscale Ag-MAFs on Reverse Osmosis Membranes: Enhancing Performance, Antibacterial Activity, and (Bio)fouling Resistance. [PDF]

ACS Omega
Seyedpour SF, Karami P, Khoshhal Salestan S, Aghapour Aktij S, Singh U, Huang S, Chew JW, Rahimpour A, Wishart D, Sadrzadeh M.   +9 more
europepmc   +1 more source

Wafer Scale III‐Nitride Deep‐Ultraviolet Vertical‐Cavity Surface‐Emitting Lasers Featuring Nanometer‐Class Control of Cavity Length

Advanced Science, EarlyView.
A DUV‐VCSEL strategy featuring the nanometer‐class control of the cavity length is proposed in the DUV optoelectronic framework based on GaN templates. After the sapphire removal, a self‐terminated etching technology is developed, whereby the cavity length can be accurately determined by epitaxy instead of the fabrication process. As such, a record low
Chen Ji, Jiaming Wang, Fujun Xu, Lisheng Zhang, Jing Lang, Ziyao Zhang, Fuyun Tan, Chengzhi Ji, Junchuan Zhang, Erfei Zhang, Xiangning Kang, Zhixin Qin, Guangxu Ju, Jiejun Wu, Xuelin Yang, Ning Tang, Xinqiang Wang, Weikun Ge, Bo Shen   +18 more
wiley   +1 more source