Results 241 to 250 of about 99,173 (297)
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Science, 2010
The technological goal of optimizing the controlled deposition of atomic monolayers is simplified by studying models of deposition of larger colloids.
Theodore L. Einstein +1 more
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The technological goal of optimizing the controlled deposition of atomic monolayers is simplified by studying models of deposition of larger colloids.
Theodore L. Einstein +1 more
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Epitaxial growth in one dimension
Journal of Physics: Condensed MatterAbstract The final structure and properties of layers grown by epitaxy techniques are determined in the very early stage of the process. This review describes one-dimensional models for epitaxial growth, emphasizing the basic theoretical concepts employed to analyze nucleation and aggregation phenomena in the submonolayer regime.
Juan David Álvarez-Cuartas +2 more
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Journal of Crystal Growth, 1974
Abstract Several spinel ferrites have been epitaxially grown on 〈111〉 MgO substrates by CVD. Coprecipitated ferrite was used as source, Cl 2 as transport gas and argon as carrier gas. Using coprecipitated material as source provided higher speed of deposition than sintered material.
Pierre Gibart +2 more
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Abstract Several spinel ferrites have been epitaxially grown on 〈111〉 MgO substrates by CVD. Coprecipitated ferrite was used as source, Cl 2 as transport gas and argon as carrier gas. Using coprecipitated material as source provided higher speed of deposition than sintered material.
Pierre Gibart +2 more
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Epitaxial Film Growth and Characterization
2000Publisher Summary This chapter reviews the current status of epitaxial growth technology and the characterization of the deposited material. The production of cutting edge compound semiconductor devices requires the growth of high quality epitaxial layers.
Ferguson, I.T. +4 more
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1992
Most of the semiconductor devices are formed from single crystals. Their growth has improved substantially from conventional bulk growth methods to tailored epitaxial layer-for-layer deposition, creating the cleanest, currently available semiconductors with the least density of lattice defects, as well as totally new artificial materials with tailored ...
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Most of the semiconductor devices are formed from single crystals. Their growth has improved substantially from conventional bulk growth methods to tailored epitaxial layer-for-layer deposition, creating the cleanest, currently available semiconductors with the least density of lattice defects, as well as totally new artificial materials with tailored ...
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Selective epitaxial growth by molecular beam epitaxy
Semiconductor Science and Technology, 1993Selective epitaxial growth by molecular beam epitaxy (MBE) is realized at rather high substrate temperatures: 700 degrees for GaAs and 550 degrees C for InAs with a growth rate of 0.7 mu m h-1. Selectivity depends significantly on growth rate, As pressure and substrate temperature. Growth kinetic studies are carried out.
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Evaluating epitaxial growth stability
Materials Science and Engineering: B, 1997Abstract We have investigated variations of epitaxial layer thicknesses from uniform periodicity in compound semiconductor Bragg-reflectors experimentally and theoretically. Specifically, we characterized the variation of individual layer thicknesses in the growth direction at a given point on the wafer, thereby assessing the growth stability in ...
D.H. Christensen +4 more
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Epitaxial Growth and Magnetism
MRS Proceedings, 1998AbstractGrowth phenomena and magnetism of metallic films are not easy to describe at the same level of precision. A small variation of distances can drastically modify the magnetic properties of thin metallic films. In this contribution different aspects encountered in the growth of thin magnetic metallic films are addressed.
H. Dreysse, M. Freyss, D. Stoeffler
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Solid State Communications, 1995
Abstract Fractal structures of Au with an average dimension of 1.69±0.06 with concomitant growth of epitaxial gold silicide islands have been observed in Au thin films prepared by vacuum evaporation of Au on bromine-passivated Si (111) substrates and subsequent annealing around the Au Si eutectic temperature.
K. Sekar +5 more
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Abstract Fractal structures of Au with an average dimension of 1.69±0.06 with concomitant growth of epitaxial gold silicide islands have been observed in Au thin films prepared by vacuum evaporation of Au on bromine-passivated Si (111) substrates and subsequent annealing around the Au Si eutectic temperature.
K. Sekar +5 more
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1996
In the past, crystal growth and crystal characterisation were different topics performed in different laboratories by scientists from different disciplines. With the advent of epitaxial layer growth by Molecular Beam Epitaxy (MBE), Vapour Phase Epitaxy (VPE) and Liquid Phase Epitaxy (LPE) the two areas moved closer together since microscopic knowledge ...
Wolfgang Richter, Dietrich Zahn
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In the past, crystal growth and crystal characterisation were different topics performed in different laboratories by scientists from different disciplines. With the advent of epitaxial layer growth by Molecular Beam Epitaxy (MBE), Vapour Phase Epitaxy (VPE) and Liquid Phase Epitaxy (LPE) the two areas moved closer together since microscopic knowledge ...
Wolfgang Richter, Dietrich Zahn
openaire +1 more source