Results 251 to 260 of about 100,599 (299)
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1992
Most of the semiconductor devices are formed from single crystals. Their growth has improved substantially from conventional bulk growth methods to tailored epitaxial layer-for-layer deposition, creating the cleanest, currently available semiconductors with the least density of lattice defects, as well as totally new artificial materials with tailored ...
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Most of the semiconductor devices are formed from single crystals. Their growth has improved substantially from conventional bulk growth methods to tailored epitaxial layer-for-layer deposition, creating the cleanest, currently available semiconductors with the least density of lattice defects, as well as totally new artificial materials with tailored ...
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Selective epitaxial growth by molecular beam epitaxy
Semiconductor Science and Technology, 1993Selective epitaxial growth by molecular beam epitaxy (MBE) is realized at rather high substrate temperatures: 700 degrees for GaAs and 550 degrees C for InAs with a growth rate of 0.7 mu m h-1. Selectivity depends significantly on growth rate, As pressure and substrate temperature. Growth kinetic studies are carried out.
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Evaluating epitaxial growth stability
Materials Science and Engineering: B, 1997Abstract We have investigated variations of epitaxial layer thicknesses from uniform periodicity in compound semiconductor Bragg-reflectors experimentally and theoretically. Specifically, we characterized the variation of individual layer thicknesses in the growth direction at a given point on the wafer, thereby assessing the growth stability in ...
D.H. Christensen +4 more
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Epitaxial Growth and Magnetism
MRS Proceedings, 1998AbstractGrowth phenomena and magnetism of metallic films are not easy to describe at the same level of precision. A small variation of distances can drastically modify the magnetic properties of thin metallic films. In this contribution different aspects encountered in the growth of thin magnetic metallic films are addressed.
H. Dreysse, M. Freyss, D. Stoeffler
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Solid State Communications, 1995
Abstract Fractal structures of Au with an average dimension of 1.69±0.06 with concomitant growth of epitaxial gold silicide islands have been observed in Au thin films prepared by vacuum evaporation of Au on bromine-passivated Si (111) substrates and subsequent annealing around the Au Si eutectic temperature.
K. Sekar +5 more
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Abstract Fractal structures of Au with an average dimension of 1.69±0.06 with concomitant growth of epitaxial gold silicide islands have been observed in Au thin films prepared by vacuum evaporation of Au on bromine-passivated Si (111) substrates and subsequent annealing around the Au Si eutectic temperature.
K. Sekar +5 more
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1996
In the past, crystal growth and crystal characterisation were different topics performed in different laboratories by scientists from different disciplines. With the advent of epitaxial layer growth by Molecular Beam Epitaxy (MBE), Vapour Phase Epitaxy (VPE) and Liquid Phase Epitaxy (LPE) the two areas moved closer together since microscopic knowledge ...
Wolfgang Richter, Dietrich Zahn
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In the past, crystal growth and crystal characterisation were different topics performed in different laboratories by scientists from different disciplines. With the advent of epitaxial layer growth by Molecular Beam Epitaxy (MBE), Vapour Phase Epitaxy (VPE) and Liquid Phase Epitaxy (LPE) the two areas moved closer together since microscopic knowledge ...
Wolfgang Richter, Dietrich Zahn
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Physics Bulletin, 1973
G W Cullen, E Kaldis, R L Parker and M Schieber (eds) Amsterdam: North Holland 1972 pp xii + 382 price Dfl 13000, $40.75 This volume contains just over half of the 80 papers presented at the second international conference on vapour growth and epitaxy held in Jerusalem during May 1972, and is the hardback edition of J. Crystal Growth 17 (December 1972).
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G W Cullen, E Kaldis, R L Parker and M Schieber (eds) Amsterdam: North Holland 1972 pp xii + 382 price Dfl 13000, $40.75 This volume contains just over half of the 80 papers presented at the second international conference on vapour growth and epitaxy held in Jerusalem during May 1972, and is the hardback edition of J. Crystal Growth 17 (December 1972).
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Single Crystal Growth II: Epitaxial Growth
1991This chapter is concerned with the growth of single-crystal epitaxial layers of semiconductors. The term “epitaxy” was originally used to describe the regular growth of one material on another different material. With the introduction of vapor phase growth in the 1960s the use of the technology to grow one semiconductor on a substrate of the same ...
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