Results 241 to 250 of about 100,599 (299)
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Journal of Crystal Growth, 1972
Abstract In silicon vapor epitaxial growth using hydrogen reduction of SiCl 4 , it has been found that two-dimensional growth is a dominant process. The two-dimensional growth (layer growth) rate is direction dependent and very large; more than several hundreds microns per minute on a perfect (111) surface in a direction at about 1200°C under the ...
Jun-Ichi Nishizawa +2 more
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Abstract In silicon vapor epitaxial growth using hydrogen reduction of SiCl 4 , it has been found that two-dimensional growth is a dominant process. The two-dimensional growth (layer growth) rate is direction dependent and very large; more than several hundreds microns per minute on a perfect (111) surface in a direction at about 1200°C under the ...
Jun-Ichi Nishizawa +2 more
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2021
We consider an epitaxial growth model in surface science. The model equation includes an effect of surface diffusion which is described by a biharmonic operator and a roughening which caused by the Schwoebel effect. Under suitable assumptions, we show that the results reviewed in Chap. 2 are available to the model equation.
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We consider an epitaxial growth model in surface science. The model equation includes an effect of surface diffusion which is described by a biharmonic operator and a roughening which caused by the Schwoebel effect. Under suitable assumptions, we show that the results reviewed in Chap. 2 are available to the model equation.
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Materials Science and Technology, 1999
The mechanisms of epitaxial growth affect both the form of a deposit and the way in which lattice defects are introduced into the deposit.
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The mechanisms of epitaxial growth affect both the form of a deposit and the way in which lattice defects are introduced into the deposit.
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2002
Attractive dispersion forces, active between incident atoms and the substrate, cause preferential arrival of atoms on protruding parts on growing film surfaces. This phenomenon, which we refer to as “steering”, can give rise to significant flux redistribution.
Poelsema, Bene, van Dijken, Sebastiaan
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Attractive dispersion forces, active between incident atoms and the substrate, cause preferential arrival of atoms on protruding parts on growing film surfaces. This phenomenon, which we refer to as “steering”, can give rise to significant flux redistribution.
Poelsema, Bene, van Dijken, Sebastiaan
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Mechanisms of epitaxial growth
Contemporary Physics, 1987Abstract ‘Epitaxy’ means order in the relative orientation of identical crystals nucleated and grown on a large single-crystal face. Every crystal of the deposited material is oriented in such a way that there is coincidence of some vectors of its reciprocal lattice with vectors of the reciprocal lattice of the substrate surface.
I. Markov, S. Stoyanov
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Epitaxial Growth on Simox Wafers
MRS Proceedings, 1985ABSTRACTThe top silicon layer in as-implanted SIMOX wafer is usually too thin to support device fabrication. Hence, an epitaxial layer is usually grown on a SIMOX wafer after oxygen ion implantation and anneal. Because this epitaxial layer is typically very thin,less than 500 nm) and because of the material structure of the S1MOX wafer, special care ...
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Science, 2010
The technological goal of optimizing the controlled deposition of atomic monolayers is simplified by studying models of deposition of larger colloids.
Theodore L. Einstein +1 more
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The technological goal of optimizing the controlled deposition of atomic monolayers is simplified by studying models of deposition of larger colloids.
Theodore L. Einstein +1 more
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Epitaxial growth in one dimension
Journal of Physics: Condensed MatterAbstract The final structure and properties of layers grown by epitaxy techniques are determined in the very early stage of the process. This review describes one-dimensional models for epitaxial growth, emphasizing the basic theoretical concepts employed to analyze nucleation and aggregation phenomena in the submonolayer regime.
Juan David Álvarez-Cuartas +2 more
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Journal of Crystal Growth, 1974
Abstract Several spinel ferrites have been epitaxially grown on 〈111〉 MgO substrates by CVD. Coprecipitated ferrite was used as source, Cl 2 as transport gas and argon as carrier gas. Using coprecipitated material as source provided higher speed of deposition than sintered material.
Pierre Gibart +2 more
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Abstract Several spinel ferrites have been epitaxially grown on 〈111〉 MgO substrates by CVD. Coprecipitated ferrite was used as source, Cl 2 as transport gas and argon as carrier gas. Using coprecipitated material as source provided higher speed of deposition than sintered material.
Pierre Gibart +2 more
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Epitaxial Film Growth and Characterization
2000Publisher Summary This chapter reviews the current status of epitaxial growth technology and the characterization of the deposited material. The production of cutting edge compound semiconductor devices requires the growth of high quality epitaxial layers.
Ferguson, I.T. +4 more
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