Results 1 to 10 of about 88,368 (276)

Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation [PDF]

Scientific Reports, 2022
SiC bipolar degradation, which is caused by stacking fault expansion from basal plane dislocations in a SiC epitaxial layer or near the interface between the epitaxial layer and the substrate, is one of the critical problems inhibiting widespread usage ...
Shunta Harada, Toshiki Mii, Hitoshi Sakane, Masashi Kato   +3 more
doaj   +2 more sources

Investigation on Step-Bunched Homoepitaxial Layers Grown on On-Axis 4H-SiC Substrates via Molten KOH Etching

Crystals, 2022
Wafer-scale on-axis 4H-SiC epitaxial layers with very low roughness were obtained in this study. By performing carbon-rich hydrogen etching and epitaxial growth of the epitaxial layer at different temperatures, local mirror regions (LMRs) with root mean ...
Jiulong Wang, Siqi Zhao, Guoguo Yan, Zhanwei Shen, Wanshun Zhao, Lei Wang, Xingfang Liu   +6 more
doaj   +1 more source

Layer-by-layer epitaxy of multi-layer MoS2 wafers

National Science Review, 2022
Abstract The 2D semiconductor of MoS2 has great potential for advanced electronics technologies beyond silicon. So far, high-quality monolayer MoS2 wafers have been available and various demonstrations from individual transistors to integrated circuits have also been shown.
Wang, Qinqin, Tang, Jian, Li, Xiaomei, Tian, Jinpeng, Liang, Jing, Li, Na, Ji, Depeng, Xian, Lede, Guo, Yutuo, Li, Lu, Zhang, Qinghua, Chu, Yanbang, Wei, Zheng, Zhao, Yanchong, Du, Luojun, Yu, Hua, Bai, Xuedong, Gu, Lin, Liu, Kaihui, Yang, Wei, Yang, Rong, Shi, Dongxia, Zhang, Guangyu   +22 more
openaire   +4 more sources

Enhanced crystalline quality of non-polar a-plane AlGaN epitaxial film grown with Al-composition-graded AlGaN intermediate layer

Materials Research Express, 2021
The non-polar a -AlGaN epitaxial film was successfully grown on the semi-polar r- sapphire substrate by metal-organic chemical vapor deposition technique.
Abbas Nasir, Xiong Zhang, Liang Lu, Jin Zhang, Jiadong Lyu, Yiping Cui   +5 more
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Magnetic anisotropy and Dzyaloshinskii–Moriya interaction of Pd/Co/Ta thin films

St. Petersburg Polytechnical University Journal: Physics and Mathematics, 2022
In this work, we experimentally studied the structure and magnetic properties of epitaxially grown ultrathin Pd/Co/Ta films. We have studied the effect of Ta on the structural and magnetic properties of Pd/Co epitaxial films. The deposition of a Ta layer
Kuznetsova Mariya, Suslin German, Shishelov Aleksandr, Yushchenko Diana, Ayanitov Oleg, Tarasov Egor, Kozlov Aleksei   +6 more
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A New Split Gate Resurf Stepped Oxide UMOSFET Structure with High Doped Epitaxial Layer for Improving Figure of Merit (FOM)

Applied Sciences, 2020
The split gate resurf stepped oxide with highly doped epitaxial layer (HDSGRSO) UMOSFET has been proposed. The epitaxial layer of HDSGRSO u-shape metal oxide semiconductor field effect transistor (UMOSFET) has been divided into three parts: the upper ...
Runze Chen, Lixin Wang, Hongkai Zhang, Mengyao Cui, Min Guo   +4 more
doaj   +1 more source

Microstructure and mechanical properties of laser-assisted epitaxial growth of nickel-based single crystal superalloys

Journal of Materials Research and Technology, 2023
The effects of process parameters on the microstructures and properties of the laser-assisted epitaxial growth layer are of great significance for the repair of nickel-based single-crystal blades. This work investigated the microstructures and properties
Jinjun Xu, Jiayi Liu, Lihong Yu, Yang Zhan, Kun Gao, Zhipeng Zhou, Lan Huang, Qian Lei   +7 more
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Depth Profiling of Ion-Implanted 4H–SiC Using Confocal Raman Spectroscopy

Crystals, 2020
For silicon carbide (SiC) processed by ion-implantation, dedicated test structure fabrication or destructive sample processing on test wafers are usually required to obtain depth profiles of electrical characteristics such as carrier concentration.
Ying Song, Zongwei Xu, Tao Liu, Mathias Rommel, Hong Wang, Yufang Wang, Fengzhou Fang   +6 more
doaj   +1 more source

Molecular layer epitaxy

Thin Solid Films, 1986
Abstract Molecular layer epitaxy (MLE) of GaAs related compounds and Si with SiO 2 deposition has been developed to realize the tera-hertz operating devices. At sufficiently low process temperature, lower than in the conventional growth method, device quality epitaxial layers were achieved by MLE.
Jun-ichi NISHIZAWA, Toru KURABAYASHI
openaire   +2 more sources

Deep-level traps in lightly Si-doped n-GaN on free-standing m-oriented GaN substrates

AIP Advances, 2018
In this study, we investigated the deep-level traps in Si-doped GaN epitaxial layers by metal-organic chemical vapor deposition on c-oriented and m-oriented free-standing GaN substrates.
H. Yamada, H. Chonan, T. Takahashi, T. Yamada, M. Shimizu   +4 more
doaj   +1 more source