Results 171 to 180 of about 88,368 (276)

Charge-Domain Type 2.2 µm BSI Global Shutter Pixel with Dual-Depth DTI Produced by Thick-Film Epitaxial Process. [PDF]

Sensors (Basel)
Yokoyama T, Tsutsui M, Nishi Y, Noguchi Y, Takeuchi M, Oda M, Amos F.   +6 more
europepmc   +1 more source

Equilibrium theory of strained epitaxial layers

Physical Review B, 1989
, Granato, , Kosterlitz, , Ying
openaire   +3 more sources

Magnetic Anisotropy Modulation via van der Waals Gap Engineering in 2D Ferromagnet Fe4GeTe2

Advanced Science, EarlyView.
This study demonstrates a new route to control magnetic anisotropy in 2D ferromagnets via van der Waals gap engineering. In Fe4GeTe2, an interface‐induced vdW gap expansion is found to anomalously enhance in‐plane magnetic anisotropy while suppressing the spin reorientation transition.
Weiran Xie, Guodong Wei, Tong Zhao, Hangtian Wang, Jing Li, Jihang Gao, Peiyuan Yu, Zili Wang, Fan Gao, Stéphane Mangin, Zhimei Sun, Weisheng Zhao, Jie Zhang, Tianxiao Nie   +13 more
wiley   +1 more source

Interface Engineering Using Multiple La-Doped HfO₂ Epitaxial Subnanolayers To Improve the Ferroelectric Properties of Hf_0.5Zr_0.5O₂ Films. [PDF]

ACS Appl Electron Mater
Ghiasabadi Farahani M, Song T, Magén C, Zou J, Sánchez F, Fina I.   +5 more
europepmc   +1 more source

Navigating the Ethereal Tightrope: The Nanogenerator Manipulates Neurons for Immune Equilibrium

Advanced Science, EarlyView.
This review explores how nanogenerators modulate neuroimmune responses, offering innovative strategies for treating neurological disorders. By interfacing with neural pathways, they enable precise control of immune activity, especially via vagus nerve stimulation.
Jia Du, Rui Deng, Ya Wu, Hong‐Xia Ren, Zong‐Hong Lin, Yang‐Bao Miao   +5 more
wiley   +1 more source

Monolithic III-V membrane photonic crystal lasers on SOI using selective lateral heteroepitaxy. [PDF]

Light Sci Appl
Zeng C, Ren Z, Lei Z, Fu D, Zhao Y, Yu Y, Han Y, Yu S.   +7 more
europepmc   +1 more source

Atomically Resolved Electron Reflectivity at a Metal/Semiconductor Interface

Advanced Science, EarlyView.
An atomically flat interface is achieved in the incoherent Al/Ge heterostructure using molecular beam epitaxy (MBE). Scanning tunneling microscopy (STM) reveals a laterally periodic modulation of electron reflectivity with atomic resolution at the commensurate Al/Ge interfacial lattice, originating from the local electronic states.
Ding‐Ming Huang, Jian‐Huan Wang, Jie‐Yin Zhang, Yuan Yao, Hongqi Xu, Jian‐Jun Zhang   +5 more
wiley   +1 more source

Imperfection in Semiconductors Leading to High Performance Devices

Advanced Science, EarlyView.
Crystalline perfection is typically pursued in semiconductors to enhance device performance. However, through modeling and experimental work, we show that defects can be strategically employed in a specific detection regime to increase sensitivity to extreme values. GaN diodes are demonstrated to effectively detect high‐energy proton beams at fluxes as
Jean‐Yves Duboz, Matilde Siviero, Lucas Lesourd, Eric Frayssinet, Sebastien Chenot, Petter Hofverberg, Sullivan Marafico, Marie Vidal, Maxime Hugues   +8 more
wiley   +1 more source

Halide Perovskite Heterostructures for High-Performance Light-Emitting Diodes. [PDF]

Nanomicro Lett
Huo Y, He T, Yang S, Jiang Y, Sun C.
europepmc   +1 more source

Gallium Nitride Semiconductor Resonant Tunneling Transistor

Advanced Science, EarlyView.
Three‐terminal GaN semiconductor resonant tunneling transistors (RTTs), which comprise an double‐barrier AlN/GaN/AlN resonant tunneling diode integrated with a GaN high‐electron‐mobility transistor (HEMT) through epitaxial growth in series and parallel configuraions, respectively.
Fang Liu, JunShuai Xue, GuanLin Wu, JinYuan Yuan, JiaJia Yao, RenJie Liu, Zhuang Guo, ZeHui Li, HaoRan Hu, WenBo Sun, Cheng Zhao, ChenKai Zhang, XinYan Liu, Kai Zhang, JinCheng Zhang, Yue Hao   +15 more
wiley   +1 more source