Results 11 to 20 of about 88,368 (276)

ELECTRONIC PROPERTY OF NA-DOPED EPITAXIAL GRAPHENES ON SIC [PDF]

, 2019
The electronic property of epitaxial graphenes with Na adsorption or intercalation is studied with the use of pseudopotential density functional method.
Choi, SM, Jhi, SH
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Antimony doping of Si layers grown by solid-phase epitaxy [PDF]

, 1976
We report here that layers of Si formed by solid-phase epitaxial growth (SPEG) can be doped intentionally. The sample consists initially of an upper layer of amorphous Si (~1 µm thick), a very thin intermediate layer of Sb (nominally 5 Å), and a thin ...
Blattner, Richard J., Canali, C., Evans, C. A., Jr., Lau, S. S., Liau, Z. L., Mayer, J. W., Nakamura, K., Nicolet, M.-A.   +7 more
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An epitaxial model for heterogeneous nucleation on potent substrates [PDF]

, 2012
© The Minerals, Metals & Materials Society and ASM International 2012In this article, we present an epitaxial model for heterogeneous nucleation on potent substrates.
A. Hashibon, A. Hashibon, A. Trampert, A.L. Greer, A.M. Bunn, B. Cantor, B.S. Murty, C. Amador, C.A.B. Ball, D. Hull, D. Turnbull, D.H. StJohn, D.H. StJohn, F.C. Frank, F.Y. Huang, G.P. Jones, G.P. Jones, H. Men, H.T. Li, J. Gibbs, J. Goldak, J. Tolle, J.A. Brammer, J.A. Dantzig, J.L. Smialek, J.W. Cahn, J.W. Matthews, J.W. Matthews, K.F. Kelton, M. Johnsson, M. Ohring, M. Qian, M. Volmer, M.A. Easton, M.A. Easton, M.A. Easton, M.J. Regan, M.X. Zhang, M.X. Zhang, O.G. Shpyrko, O.G. Shpyrko, O.M. Magnussen, P. Schumacher, S. Luryi, S.C. Jain, S.H. Oh, T. Ito, T.E. Quested, T.E. Quested, W.T. Kim, Y. Tamura, Y.H. Lo, Zhongyun Fan   +52 more
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Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1-μm MOSFET's with epitaxial and delta-doped channels [PDF]

, 1999
A detailed three-dimensional (3-D) statistical 'atomistic' simulation study of fluctuation-resistant sub 0.1-μm MOSFET architectures with epitaxial channels and delta doping is presented.
Asenov, A., Saini, S.
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Quasi-free Standing Epitaxial Graphene on SiC by Hydrogen Intercalation [PDF]

, 2009
Quasi-free standing epitaxial graphene is obtained on SiC(0001) by hydrogen intercalation. The hydrogen moves between the 6root3 reconstructed initial carbon layer and the SiC substrate.
Coletti, C., Iwasaki, T., Lund University., Riedl, C., Starke, U., Zakharov, Alexei,   +5 more
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Feasibility of using thin crystalline silicon films epitaxially grown at 165 °C in solar cells: A computer simulation study

EPJ Photovoltaics, 2013
We have previously reported on the successful deposition of heterojunction solar cells whose thin intrinsic crystalline absorber layer is grown using the standard radio frequency plasma enhanced chemical vapour deposition process at 165 °C on highly ...
Roca i Cabarrocas P., Labrune M., Cariou R., Chakraborty S., Chatterjee P.   +4 more
doaj   +1 more source

Epitaxial deposition of LaF3 thin films on Si using deep eutectic solvent based facile and green chemical route

AIP Advances, 2021
Epitaxial lanthanum fluoride (LaF3) is considered an important and outstanding material for the fabrication of Metal–Insulator–Semiconductor (MIS) capacitive devices.
Md. Hafijur Rahman, Shamim Ahmmed, Samia Tabassum, Abu Bakar Md. Ismail   +3 more
doaj   +1 more source

Effect of epitaxial layer thickness on the electrical properties of Ti/n-AlGaAs grown by MBE

Results in Physics, 2016
The effect of epitaxial layer thickness on electrical characteristics of two Ti/n-Al0.33Ga0.67As Schottky barrier diodes was studied in the temperature range of 300–420 K.
N.A. Al-Ahmadi, H.A. Al-Jawhari
doaj   +1 more source

Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001) [PDF]

, 2009
Epitaxial graphene films were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on epitaxial graphene is realized by inserting a fully oxidized nanometer thin aluminum film as a ...
Chen Z., J. J. Gu, L. W. Engel, M. A. Capano, M. L. Bolen, M. Xu, P. D. Ye, T. Shen, Y. Q. Wu   +8 more
core   +4 more sources

Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure

Crystals, 2017
In order to reduce the dislocation density and improve the performance of high indium content In0.82Ga0.18As films, the design of double buffer layers has been introduced into the In0.82Ga0.18As/InP heterostructure.
Liang Zhao, Zuoxing Guo, Xiangdong Ding, Jingjuan Li, Shen Yang, Min Zhang, Lei Zhao   +6 more
doaj   +1 more source