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Atomic layer epitaxy of GaAs by chemical beam epitaxy
Journal of Crystal Growth, 1990Abstract We report a study of atomic layer epitaxy (ALE) using trimethyl-Ga and triethyl-Ga by chemical beam epitaxy. Reflection high energy electron diffraction is employed to monitor the formation of each individual monolayer directly. A limiting mechanism which inhibits the continual adsorption and pyrolysis on a surface saturated with Ga-alkyl is
T.H. Chiu +3 more
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Anisotropic growth and “layer-by-layer” epitaxy
Surface Science, 1989Abstract It is proposed and justified that systems that grow epitaxially, but in which there is a lateral growth anisotropy, will grow with a smaller interface width than systems in which the growth is isotropic. An example in which this may be true is the growth of Si on Si(100).
Y.-W. Mo +3 more
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ChemInform Abstract: MOLECULAR LAYER EPITAXY
Chemischer Informationsdienst, 1985AbstractDie Wachstumsbedingungen für das Wachsen molekularer GaAs‐Schichten aus der Gasphase (AsH3 und Trimethyl‐Gallium, TMG) werden bestimmt.
J. NISHIZAWA, H. ABE, T. KURABAYASHI
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Layer-by-layer sputtering and epitaxy of Si(100)
Physical Review Letters, 1991We report oscillations in diffracted electron intensities during ion bombardment of Si(100) by 200- and 250-eV Xe, both alone and with sequential and simultaneous epitaxy. Analysis of the phase and frequency of the oscillations shows that, to first order, ion bombardment undoes'' previous epitaxy and cancels or partially cancels simultaneous deposition.
, Bedrossian +4 more
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Atomic Layer Epitaxy of Silicon
Materials and Manufacturing Processes, 1995Abstract Two methods are proposed and demonstrated successfully for low temperature atomic layer epitaxy (ALE) of Si, where H atoms play essential roles. The first method is the use of H as a self-limiting factor. Trisilane (Si3H8) was used as source gas and the substrate temperature was modulated in order to alternate steps in an ALE cycle.
Shigeru Imai +4 more
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Electrochemical atomic layer epitaxy (ECALE)
Journal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1991Abstract Electrodeposition holds promise as a low cost, flexible room temperature technique for the production of II-VI compound semiconductors. Previous studies, however, have resulted in the production of polycrystalline deposits in every case.
Brian W. Gregory, John L. Stickney
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Defects in epitaxial SiGe-alloy layers
Materials Science and Engineering: B, 2000Abstract Examples of growth- and process-induced defects in strain-relaxed Si1−xGex alloy layers grown epitaxially on Si substrates are reviewed. Recent efforts to reduce the density of threading dislocations using different types of buffer layers to accommodate the misfit strain are examined, and the optical and electrical activity of growth-induced
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First-layer island growth during epitaxy
Physical Review B, 1996We study the growth of first-layer islands making use of a mean-field model to describe the diffusion of free adatoms on the uncovered substrate. Model parameters are determined from recent experimental results for the growth of metals. The growth law is found using the quasi-steady-state approximation and we show that this result is consistent, at ...
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Advanced epitaxial growth techniques: atomic layer epitaxy and migration-enhanced epitaxy
Journal of Crystal Growth, 1999New epitaxial growth techniques based on modulated source supplies such as atomic layer epitaxy (ALE) and migration-enhanced epitaxy (MEE) have been developed to grow atomically controlled surfaces and interfaces of compound semiconductors. ALE is based on repeated adsorption saturation of constituent atoms on the substrate surface which guarantees ...
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Epitaxial piezoelectric layer SMR fabricated using epitaxial sacrificial layer process
2022 IEEE MTT-S International Conference on Microwave Acoustics and Mechanics (IC-MAM), 2022Shinya Kudo +2 more
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