Results 61 to 70 of about 88,368 (276)

Epitaxial and layer-by-layer growth of EuO thin films on yttria-stabilized cubic zirconia (001) using MBE distillation

, 2009
We have succeeded in growing epitaxial and highly stoichiometric films of EuO on yttria-stabilized cubic zirconia (YSZ) (001). The use of the Eu-distillation process during the molecular beam epitaxy assisted growth enables the consistent achievement of ...
A. Mauger, B. Coloru, C. F. Chang, C. Schüßler-Langeheine, C. T. Chen, G. M. Roesler, Jr., H. H. Hsieh, H. Kierspel, H.-J. Lin, K. Lee, L. H. Tjeng, M. Moretti Sala, N. Hollmann, R. Sutarto, S. G. Altendorf, T. Haupricht, V. E. Henrich, Z. Hu   +17 more
core   +1 more source

Pentagonal 2D Altermagnets: Material Screening and Altermagnetic Tunneling Junction Device Application

Advanced Functional Materials, EarlyView.
From a database of 170 pentagonal 2D materials, 4 candidates exhibiting altermagnetic ordering are screened. Furthermore, the spin‐splitting and unconventional boundary states in the pentagonal 2D altermagnetic monolayer MnS2 are investigated. A MnS2‐based altermagnetic tunneling junction is designed and, through ab initio quantum transport simulations,
Jianhua Wang, Xingyue Yang, Zongmeng Yang, Jing Lu, Pin Ho, Wenhong Wang, Yee Sin Ang, Zhenxiang Cheng, Shibo Fang   +8 more
wiley   +1 more source

Laser atomic layer epitaxy.

The Review of Laser Engineering, 1987
Laser atomic layer epitaxy technique is reviewed, and growth characteristics and surface processes in laser Atomic Layer Epitaxy (ALE) are described. The self-limiting mechanism is the key to attain the ideal layer-by-layer controllability in growth rate. The self-limited growth is obtained in a wide range of several growth parameters.
Yoshinobu AOYAGI, Atsutoshi DOI, Souhachi IWAI, Susumu NAMBA   +3 more
openaire   +2 more sources

Prospects of Electric Field Control in Perpendicular Magnetic Tunnel Junctions and Emerging 2D Spintronics for Ultralow Energy Memory and Logic Devices

Advanced Functional Materials, EarlyView.
Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp, Brahmdutta Dixit, Yifei Yang, Deyuan Lyu, Thomas Peterson, Qi Jia, Yu‐Chia Chen, Jian‐Ping Wang   +7 more
wiley   +1 more source

Layered Epitaxial Growth of 3C/4H Silicon Carbide Confined by Surface Micro-Nano Steps

Crystals, 2023
In this study, we used a horizontal hot-wall CVD epitaxy apparatus to grow epitaxial layers on 4° off-axis 4H-SiC substrates. Epitaxial films were grown by adjusting the flow rate of the source gas at different levels.
Ning Guo, Yicheng Pei, Weilong Yuan, Yunkai Li, Siqi Zhao, Shangyu Yang, Yang Zhang, Xingfang Liu   +7 more
doaj   +1 more source

Kinetic Insights into Precursor‐Assisted Soft Sphere Close Packing Revealed by In Situ GISAXS with Implications for Gas Sensing

Advanced Functional Materials, EarlyView.
The versatile precursor‐assisted soft sphere close packing during slot‐die coating is investigated with in situ X‐ray scattering. The soft crystallization pathways towards a close packing involve multistep structural transitions such as surface nucleation, in‐plane, and out‐of‐plane crystallization.
Guangjiu Pan, Wenhe Xie, Suzhe Liang, Ting Tian, Shanshan Yin, Lixing Li, Altantulga Buyan‐Arivjikh, Jinsheng Zhang, Thomas Baier, Zhuijun Xu, Matthias Schwartzkopf, Sarathlal Koyiloth Vayalil, Stephan V. Roth, Yonghui Deng, Peter Müller‐Buschbaum   +14 more
wiley   +1 more source

Impact of Buffer Layer on Electrical Properties of Bow-Tie Microwave Diodes on the Base of MBE-Grown Modulation-Doped Semiconductor Structure

Crystals
Bow-tie diodes on the base of modulation-doped semiconductor structures are often used to detect radiation in GHz to THz frequency range. The operation of the bow-tie microwave diodes is based on carrier heating phenomena in an epitaxial semiconductor ...
Algirdas Sužiedėlis, Steponas Ašmontas, Jonas Gradauskas, Aurimas Čerškus, Aldis Šilėnas, Andžej Lučun   +5 more
doaj   +1 more source

Novel 1064 nm DBR lasers combining active layer removal and surface gratings

Electronics Letters, 2021
The fabrication and characterisation details of novel distributed Bragg reflector (DBR) diode lasers emitting around 1064 nm are presented here. The AlGaAs epitaxial layer stack used here allows the removal of the active quantum wells in passive sections
O. Brox, H. Wenzel, J. Fricke, P. Della Casa, A. Maaßdorf, M. Matalla, S. Wenzel, A. Wicht, A. Knigge   +8 more
doaj   +1 more source

Photoswitching Conduction in Framework Materials

Advanced Functional Materials, EarlyView.
This mini‐review summarizes recent advances in state‐of‐the‐art proton and electron conduction in framework materials that can be remotely and reversibly switched on and off by light. It discusses the various photoswitching conduction mechanisms and the strategies employed to enhance photoswitched conductivity.
Helmy Pacheco Hernandez, Stefan Hecht, Wolfgang Wenzel, Lars Heinke, Mariana Kozlowska   +4 more
wiley   +1 more source

Forming a thick layer of ε-Ga₂O₃ on the GaN sublayer with V-defects at the interface

Научно-технический вестник информационных технологий, механики и оптики
This report presents the results of an experiment to obtain and characterization of quasi-bulk monocrystal epitaxial ε-Ga2O3/GaN heterostructures which contain V-defects at the interface.
A. Yu. Ivanov, Sh. Sh. Sharofidinov, D. I. Panov, A. V. Kremleva, D. A. Bauman, A. E. Romanov   +5 more
doaj   +1 more source