Results 71 to 80 of about 131 (105)

SELECTION OF WOODY INDICATORS AND THE OPTIMUM PLANT MATERIAL AND SAMPLING TIME FOR PHYTOPLASMA ESFY DETECTION

Acta Horticulturae, 2006
Tomáš NEČAS, B Krska
exaly   +2 more sources

High-density static ESFI MOS memory cells

1974 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1974
The area of static MOS memory cells is reduced by avoiding crossovers in the flip-flop, and by selecting the cell by a diode. Such cells have been realized in epitaxial silicon films on insulators (ESFI) with complementary transistors, diodes, and high-rated load resistors; the cell areas can be as small as 1500 /spl mu/m/SUP 2/ (2.4 mil/SUP 2/), and ...
K. Goser, M. Pomper, J. Tihanyi
openaire   +1 more source

Presence of European stone fruit yellows (ESFY or 16SrX-B) phytoplasmas in apricots in Austria [PDF]

Plant Pathology, 2001
A severe decline of apricot trees, present in Austria for several years, has recently reached notifiable levels. Initial symptoms on affected trees resemble deficiencies in water and nutrient supplies, expressed as leaf rolling, chlorosis and early reddening, leading to sudden dieback during the growing season.
Saverio Paltrinieri, Marta Martini, Assunta Bertaccini   +2 more
exaly   +3 more sources

High-speed programmable logic arrays in ESFI SOS technology

IEEE Journal of Solid-State Circuits, 1976
Exploratory MOS programmable logic array (PLA's) operating up to a clock frequency of 22 MHz have been realized and successfully operated. These PLA's used dynamic logic gates and are built in epitaxial-silicon films on insulators (ESFI) silicon-on-sapphire (SOS) technology.
E. Hebenstreit, K. Horninger
openaire   +1 more source

Threshold voltage model of ESFI-SOS-MOS transistors

IEEE Transactions on Electron Devices, 1978
A threshold voltage model for ESFI-SOS transistors is presented accounting for the thin-film structure and the existence of the silicon-sapphire interface. The model uses simplifying assumptions in order to obtain analytical expressions. In most practical cases the charge at the silicon-sapphire interface is sufficiently high to accomplish a saturation
D. Kranzer, K. Schluter, D. Takacs
openaire   +1 more source

Device scaling: Comparison between bulk and ESFI MOSTs

1974 International Electron Devices Meeting (IEDM), 1974
Summary form only given, as follows. With bulk silicon (Si) MOSTs the decrease of the transistor channel length below a certain limit results in a punch-through current, even at zero gate voltage. To avoid that effect an adequate scaling down of the device has been proposed by Dennard (1972) and others.
H. Schlotterer, J. Tihanyi
openaire   +1 more source

Properties of ESFI MOS transistors due to the floating substrate and the finite volume

IEEE Transactions on Electron Devices, 1974
The specific current-voltage characteristics of epitaxial silicon films on insulator (ESFI®) SOS MOS transistors are shown, discussed in comparison to bulk silicon MOST's, and explained by the differences in geometrical considerations, charge distribution, and operation mode, The ESFI MOST's are produced on silicon islands, in most applications, the ...
J. Tihanyi, H. Schlotterer
openaire   +1 more source

Use of real-time PCR for the characterization of 
variable symptoms in ESFY phytoplasma disease

Acta Horticulturae, 2016
Tomáš NEČAS, Ales Eichmeier, B Krska   +2 more
exaly   +2 more sources

PRELIMINARY RESULTS ON IDENTIFICATION OF MOLECULES INDUCED IN APRICOT TREES AFTER ESFY PHYTOPLASMA INOCULATION BY GRAFTING

Acta Horticulturae, 2006
To identify early 'sentinel' molecules involved in the host-pathogen interaction between apricot plants and European Stone Fruit Yellows (ESFY) phytoplasma, three experiments have been performed. Eighteen trees, of eight apricot varieties grafted on Myrobalan, and maintained under insect-proof environment were patch-grafted four years ago with tissue ...
M Pastore, Assunta Bertaccini, S Botti   +2 more
exaly   +5 more sources

Threshold Voltage Engineering with ESFI SOS MOST's

Japanese Journal of Applied Physics, 1976
With thin Epitaxial Silicon Films on Insulators (ESFI\circledR) some interesting combinations of doping for the different transistor types can be carried out. Depending on type and concentration of doping transistors of different type and threshold voltage can be produced, ranging from depletion or deep-depletion type to inversion type with small or ...
openaire   +1 more source