Results 71 to 80 of about 130 (106)

Validating the Enright Self-Forgiveness Inventory (ESFI)

Current Psychology, 2021
The need for a new self-forgiveness scale based on the theoretical foundation that forgiveness is a moral virtue has arisen. Thus, the Enright Self-Forgiveness Inventory was developed and validated in a series of four studies. In Study 1, we explored the factor structure of each of the six subscale item pools to determine the best 7 items (5 items plus
Jichan J. Kim, Fred Volk, Robert D. Enright   +2 more
openaire   +1 more source

STUDY OF SYMPTOMS VARIABILITY AFTER ARTIFICIAL INOCULATION BY PHYTOPLASMA ESFY IN DIFFERENT PRUNUS SPECIES

Acta Horticulturae, 2012
Tomas Necas
exaly   +2 more sources

SELECTION OF WOODY INDICATORS AND THE OPTIMUM PLANT MATERIAL AND SAMPLING TIME FOR PHYTOPLASMA ESFY DETECTION

Acta Horticulturae, 2006
Tomas Necas
exaly   +2 more sources

An ESFI SOS Magnetodiode

Physica Status Solidi (a), 1977
Double injection of holes and electrons into an ESFI® SOS film is observed. As is common with magnetodiodes the application of transverse magnetic inductions influences the current–voltage characteristics due to the lifetime profile of the charge carriers across the film.
P. Lilienkamp, H. Pfleiderer
openaire   +1 more source

Use of real-time PCR for the characterization of 
variable symptoms in ESFY phytoplasma disease

Acta Horticulturae, 2016
Tomas Necas, Ales Eichmeier
exaly   +2 more sources

High-density static ESFI MOS memory cells

1974 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1974
The area of static MOS memory cells is reduced by avoiding crossovers in the flip-flop, and by selecting the cell by a diode. Such cells have been realized in epitaxial silicon films on insulators (ESFI) with complementary transistors, diodes, and high-rated load resistors; the cell areas can be as small as 1500 /spl mu/m/SUP 2/ (2.4 mil/SUP 2/), and ...
K. Goser, M. Pomper, J. Tihanyi
openaire   +1 more source

ISOLATION AND EXPRESSION OF AN IMMUNODOMINANT MEMBRANE PROTEIN GENE OF THE ESFY PHYTOPLASMA FOR ANTISERUM PRODUCTION

Acta Horticulturae, 2001
E. Mergenthaler, O. Viczián, M. Fodor, S. Süle   +3 more
exaly   +2 more sources

High-speed programmable logic arrays in ESFI SOS technology

IEEE Journal of Solid-State Circuits, 1976
Exploratory MOS programmable logic array (PLA's) operating up to a clock frequency of 22 MHz have been realized and successfully operated. These PLA's used dynamic logic gates and are built in epitaxial-silicon films on insulators (ESFI) silicon-on-sapphire (SOS) technology.
E. Hebenstreit, K. Horninger
openaire   +1 more source

Thin Film Evaluation Techniques for the ESFI SOS Technology

Japanese Journal of Applied Physics, 1975
The transistor parameters of the ESFI\circledRSOS field-effect transistors strongly depend on the properties of the thin epitaxial silicon film on the sapphire substrate: thickness (
M. Druminski, Ch. Kuhl, E. Preuss, F. Schwidefsky, H. Splittgerber, D. Takacs   +5 more
openaire   +1 more source

Threshold voltage model of ESFI-SOS-MOS transistors

IEEE Transactions on Electron Devices, 1978
A threshold voltage model for ESFI-SOS transistors is presented accounting for the thin-film structure and the existence of the silicon-sapphire interface. The model uses simplifying assumptions in order to obtain analytical expressions. In most practical cases the charge at the silicon-sapphire interface is sufficiently high to accomplish a saturation
D. Kranzer, K. Schluter, D. Takacs
openaire   +1 more source