Results 81 to 90 of about 130 (106)
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Five-transistor memory cells in ESFI MOS technology
IEEE Journal of Solid-State Circuits, 1973Compared with a conventional six-transistor memory cell in complementary MOS technology, a five-transistor cell only needs about 70 percent of the area. Memory matrices have been manufactured on epitaxial silicon films on insulators, using such cells with an area of 5700 /spl mu/m/SUP 2/ (9 mil/SUP 2/).
K. Goser, M. Pomper
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ESFY: A Gamified Digital Phenotyping System for Self-Monitoring of Psychological Distress
Proceedings of the 28th International Academic MindtrekSultan A. Alharthi
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THRESHOLD VOLTAGE ENGINEERING WITH ESFI SOS MOST'S
Extended Abstracts of the 1975 Conference on Solid State Devices, 1975With thin Epitaxial Silicon Films on Insulators (ESFI\circledR) some interesting combinations of doping for the different transistor types can be carried out. Depending on type and concentration of doping transistors of different type and threshold voltage can be produced, ranging from depletion or deep-depletion type to inversion type with small or ...
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Ion-implanted ESFI MOS devices with short switching times
IEEE Journal of Solid-State Circuits, 1974Switching times of complementary MOS devices realized with epitaxial silicon films on insulators (ESFI) are reduced by using a self-aligning technique with ion implantation, since the gate overlapping capacitances and therefore the so-called Miller capacitances, are reduced thereby.
M. Pomper, J. Tihanyi
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Device scaling: Comparison between bulk and ESFI MOSTs
1974 International Electron Devices Meeting (IEDM), 1974Summary form only given, as follows. With bulk silicon (Si) MOSTs the decrease of the transistor channel length below a certain limit results in a punch-through current, even at zero gate voltage. To avoid that effect an adequate scaling down of the device has been proposed by Dennard (1972) and others.
H. Schlotterer, J. Tihanyi
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Fully decoded MNOS storage arrays in ESFI MOS technology
IEEE Journal of Solid-State Circuits, 1974The operation of MNOS memory transistors realized in thin epitaxial silicon films on insulators (ESFI) is described for writing, erasing, and reading, and their behavior is explained by means of the so-called storage characteristics. From exploratory matrices with 2/spl times/2 elements the expected data of a 4-kbit chip are estimated.
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Properties of ESFI MOS transistors due to the floating substrate and the finite volume
IEEE Transactions on Electron Devices, 1974The specific current-voltage characteristics of epitaxial silicon films on insulator (ESFI®) SOS MOS transistors are shown, discussed in comparison to bulk silicon MOST's, and explained by the differences in geometrical considerations, charge distribution, and operation mode, The ESFI MOST's are produced on silicon islands, in most applications, the ...
J. Tihanyi, H. Schlotterer
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Influence of the floating substrate potential on the characteristics of ESFI MOS transistors
Solid-State Electronics, 1975Abstract A model is proposed to explain the anomalous current-voltage characteristics of ESFI MOS transistors. Due to the floating state the substrate potential of the ESFI transistor is increasing with increasing majority carrier current flowing through the substrate to source.
Jenö Tihanyi, Heinrich Schlötterer
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European Stone Fruit Yellows (ESFY).
2008Since the beginning of the twentieth century symptoms of apricot tree decline were observed in France and Italy: Morvan in 1977 named the disease associated with leptonecrosis (Goidanich, 1934) or with new sprouting in winter "apricot chlorotic leaf rolling" (ACLR). Only since the late 1970ies these symptoms were associated with phytoplasma infections,
Laimer M., BERTACCINI, ASSUNTA
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