Results 61 to 70 of about 131 (105)
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INFLUENCE OF THE TIME OF SAMPLING ON DETECTION OF ESFY PHYTOPLASMA
Acta Horticulturae, 2008Tomáš NEČAS
exaly +2 more sources
THE POSSIBILITY OF ESFY PHYTOPLASMA TRANSMISSION: THROUGH FLOWERS AND SEEDS
Acta Horticulturae, 2008Tomáš NEČAS
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Validating the Enright Self-Forgiveness Inventory (ESFI)
Current Psychology, 2021The need for a new self-forgiveness scale based on the theoretical foundation that forgiveness is a moral virtue has arisen. Thus, the Enright Self-Forgiveness Inventory was developed and validated in a series of four studies. In Study 1, we explored the factor structure of each of the six subscale item pools to determine the best 7 items (5 items plus
Jichan J. Kim +2 more
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Untersuchungen zur Europäischen Steinobstvergilbung (ESFY) in Deutschland
Gesunde Pflanzen, 2007Von 2003 bis 2007 wurden in verschiedenen Steinobstanbaugebieten in Sudwestdeutschland visuelle Bonituren durchgefuhrt, um die Verbreitung der Europaischen Steinobstvergilbung (European stone fruit yellows, ESFY) in Deutschland zu untersuchen. Probennahmen in ausgewahlten Referenzanlagen in den Regionen Neuwieder Becken, Rheinhessen, Vorderpfalz und ...
Wolfgang Jarausch
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COMPARISON OF METHODS OF ISOLATING DNA FOR ESFY PHYTOPLASMA DETECTION
Acta Horticulturae, 2009B Krska, Tomáš NEČAS
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Physica Status Solidi (a), 1977
Double injection of holes and electrons into an ESFI® SOS film is observed. As is common with magnetodiodes the application of transverse magnetic inductions influences the current–voltage characteristics due to the lifetime profile of the charge carriers across the film.
P. Lilienkamp, H. Pfleiderer
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Double injection of holes and electrons into an ESFI® SOS film is observed. As is common with magnetodiodes the application of transverse magnetic inductions influences the current–voltage characteristics due to the lifetime profile of the charge carriers across the film.
P. Lilienkamp, H. Pfleiderer
openaire +1 more source
Thin Film Evaluation Techniques for the ESFI SOS Technology
Japanese Journal of Applied Physics, 1975The transistor parameters of the ESFI\circledRSOS field-effect transistors strongly depend on the properties of the thin epitaxial silicon film on the sapphire substrate: thickness (
M. Druminski +5 more
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Five-transistor memory cells in ESFI MOS technology
IEEE Journal of Solid-State Circuits, 1973Compared with a conventional six-transistor memory cell in complementary MOS technology, a five-transistor cell only needs about 70 percent of the area. Memory matrices have been manufactured on epitaxial silicon films on insulators, using such cells with an area of 5700 /spl mu/m/SUP 2/ (9 mil/SUP 2/).
K. Goser, M. Pomper
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FIRST DETECTION OF EUROPEAN STONE FRUIT YELLOWS PHYTOPLASMA (ESFY) IN BELGIUM
Acta Horticulturae, 2004J Kummert
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