Results 261 to 270 of about 157,681 (294)

A Universal Parameter for Silicon Anisotropic Etching Inalkaline Solutions

19th IEEE International Conference on Micro Electro Mechanical Systems, 2006
We propose a new explanation for the difference between the etching properties of potassium-hydroxide (KOH) and tetramethyl-ammonium-hydroxide (TMAH) by focusing on the volume fraction occupied by the corresponding cations, K+for KOH and TMA+(with molecular structure N(CH 3 ) 4 +) for TMAH.
D. Cheng, M.A. Gosalvez, M. Shikida, K. Sato   +3 more
openaire   +1 more source

Effects of plasma parameters on etching characteristics with ECR plasma

Microelectronic Engineering, 1989
Abstract In order to realize submicron patterns for VLSI devices, it is necessary to form patterns having anisotropic profiles, without damage and contamination. In this paper, we report the results of the study on etching characteristics of poly-Si and parameters of Electron Cyclotron Resonance (ECR) plasma.
K. Nishioka, N. Fujiwara, M. Yoneda, T. Kato   +3 more
openaire   +1 more source

The Investigation of the Electrolytic Etching Parameters for a Gold Alloy

Practical Metallography, 2005
Abstract Goldsmith has been practiced since as early as 4000 BC but the microstructure examination of precious metals is still an enigma to many metallographers. The precious metal industry, historically secretive, was slow to share technology.
openaire   +1 more source

Plasma Etching Parameters Impact To Low-k Damage

ECS Transactions, 2011
Mechanical strength of low-k material greatly decreases; material composition change will also give dry etching a lot of problems which have never met before. This paper explores the approaches to solve new problems when plasma etching low-k material, such as avoiding low-k damage and other defects, keeping anisotropic and needed selectivity; finding ...
Jihong Zhang, Huiyuan Pei, LH Cheng
openaire   +1 more source

Calibration of Wet Etching Parameters for Sacrifice Layer of MEMS

Journal of Computational Science and Technology, 2011
This paper presents a wet etching simulation method for sacrifice layer of MEMS (micro electro mechanical system) that considers physical phenomenon including flow, diffusion and chemical reaction. In this method, a partial differential equation with implicit parameterization of etching properties was studied that was solvable by any commercial CFD ...
Naoki TAKANO, Kenichi SATO, Toshiyuki TORIYAMA, Toru YAMASAKI, Seiichi UESUGI   +4 more
openaire   +1 more source

Parameter optimization for an ICP deep silicon etching system

Microsystem Technologies, 2006
The paper aims at investigating the parameter optimization of silicon micro- and nano-sized etching by an inductive coupled plasma-reactive ion etching system. The source power and the SF6 gas pressure are two main parameters that dominate etching.
S. C. Chen, Y. C. Lin, J. C. Wu, L. Horng, C. H. Cheng   +4 more
openaire   +1 more source

A computational study of laser etching parameters on silicon plate

2021
In this research work, the effect of laser etching parameters are studied for the computational analysis of silicon plate. The silicon plate model was generated and thermal transient analysis was simulated in ANSYS Workbench. The model was studied as a function of laser etching parameters such as laser intensity, cutting speed, spot size.
openaire   +1 more source

A new parameter in the electrochemical etching of polymer track detectors

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993
Abstract It was discovered that the pressure applied to the electrochemical etching (ECE) chamber system and in turn to washers holding the detector tight in place between two semi-chambers has a direct effect on the internal heating and time to breakdown of the polymer detector.
M. Sohrabi, M. Katouzi
openaire   +1 more source

On parameter estimation using level sets [plasma etching]

Proceedings of the 1998 American Control Conference. ACC (IEEE Cat. No.98CH36207), 1998
Consider the problem of selecting the member of a parametrized family of curves that best matches a given curve. This is a key step in determining proper values for adjustable parameters in low-order plasma etching and deposition models. Level set methods offer several attractive features for treating such problems.
openaire   +1 more source

An Anisotropic Etching Effect in the Graphene Basal Plane

Advanced Materials, 2010
Rong Yang, Zhiwen Shi, Dongxia Shi
exaly