Results 241 to 250 of about 157,681 (294)
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The influence of etching parameters on the sensitivity of plastics
Radiation Effects, 1970Abstract It seems that the critical rate of primary ionization for track registration must also depend on the etching conditions. Simple experimental methods are presented to show a possible change in registration sensitivity as a function of the chemical parameters.
G. Somogyi, M. Várnagy, L. Medveczky
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A Study on Etching Parameters of a Reactive Ion Beam Etch for GaAs and InP
Japanese Journal of Applied Physics, 1988Some etching characteristics for GaAs and InP with Cl2 gas using a reactive ion beam etching (RIBE) system have been studied. The employed etching gas was ionized by electron cyclotron resonance (ECR) at a gas pressure of about 6×10-4 Torr; the applied microwave power was 300 W. The etch rate was measured as a function of the substrate temperature
Takashi Tadokoro +2 more
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The influence of etching parameters on the morphology of dislocation etch pits in NaCl crystals
Journal of Crystal Growth, 1970Abstract The influence of etching parameters such as undersaturation, stirring, temperature and KI concentration of the etchant on the morphology of etch pits is studied.
V. Hari Babu, K.G. Bansigir
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Parameter Investigation of Nano-Sized Etching in an ICP Silicon Etching System
2006 IEEE Conference on Emerging Technologies - Nanoelectronics, 2006The effect of process parameters on the performance of silicon nano-sized etching in an Inductive-Coupled-Plasma Reactive-Ion-Etching (ICP-RIE) system is studied by the Taguchi experimental method. The Standard L9 orthogonal array is considered to evaluate the parameter effect and to obtain the optimum conditions.
S.C. Chen +4 more
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Ion beam etching of GaAs: Influence of etching parameters on the degree of radiation damage
Applied Physics Letters, 1997The possibility of decreasing the radiation damage of GaAs during ion beam etching was investigated with the help of a photoluminescence spectra study of GaAs/InGaAs/GaAs heterostructures with near surface quantum wells. It was shown that the change of normal ion incidence to oblique and the decrease of the sample temperature to that of liquid nitrogen
T. B. Borzenko +3 more
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Influence of Electrochemical Parameters on the Etching of Macropores in Silicon
Theoretical and Experimental Chemistry, 2003The process of formation of macropores in silicon with stationary irradiation and a constant current density during the electrochemical process in dependence on the initial bias on the silicon anode, U 0, has been studied. Stable formation of macropores began when the bias reached U c, corresponding to a critical concentration of holes p c at the ...
L. A. Karachevtseva +2 more
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Effect of etching parameters on the electrochemical response of silicon nanowires
Journal of Applied Electrochemistry, 2021Silicon nanowires combine a high electrical conductivity with low thermal conductivity due to the small cross section offering a good template for sensing. Silicon p-type (100) substrate was used in this work to present a comparative study from a morphological point of view as well as for the electrical properties of silicon nanowires (SiNWs) etched by
Fatma Zaïbi +5 more
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From atomic parameters to anisotropic etching diagrams
Materials Science and Engineering: B, 1996Abstract A Monte Carlo program and a program based on the formula of the evolution of atom disappearance probabilities were used for the simulation of anisotropic etching of silicon-like crystal dots containing several thousands of atoms. An additional program extracts the local values of the etching rates and represents them in polar diagrams.
N. Moldovan, Mihaela Ilie
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In-Situ Monitoring of Electrical Parameters for Dry Etching
MRS Proceedings, 1987ABSTRACTIn this paper, external electrical measurements and a circuit model are used to obtain indirectly the plasma potential, electron density, ion current density, and sheath thickness. In a revised and extended circuit model, each element describes a current-transport mechanism.
J. Ignacio Ulacia F, James P. McVittie
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On the critical etching parameters of track detectors
Radiation Measurements, 1997Abstract The etching characteristics of mica, Lexan and cellulose acetate have been studied for fission fragment tracks. Under suitable etching conditions a few critical etching parameters (viz. critical track diameter, critical cone angle and critical angle of incidence) for these three track detectors have been determined. An empirical relationship
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