Results 251 to 260 of about 157,681 (294)
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Nanotechnology, 2008
In this paper, we relate experimental electron beam induced etching profiles to various electron limited and mass transport limited regimes via a continuum model. In particular, we develop a series of models with increasing complexity and demonstrate the effects and interactions that the precursor gas adsorption kinetics, the electron flux distribution,
Matthew G, Lassiter, Philip D, Rack
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In this paper, we relate experimental electron beam induced etching profiles to various electron limited and mass transport limited regimes via a continuum model. In particular, we develop a series of models with increasing complexity and demonstrate the effects and interactions that the precursor gas adsorption kinetics, the electron flux distribution,
Matthew G, Lassiter, Philip D, Rack
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Solar Energy, 2018
Abstract A two-step metal-catalyzed electroless etching (MCEE) of silicon wafer in HF/AgNO3 and HF/H2O2 subsequently has been reported. Since the mechanism of nanowires (SiNWs) growth in MCEE route depends highly on etching process, we investigated the role of HF concentration and the etching time.
B. Salhi, M.K. Hossain, F. Al-Sulaiman
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Abstract A two-step metal-catalyzed electroless etching (MCEE) of silicon wafer in HF/AgNO3 and HF/H2O2 subsequently has been reported. Since the mechanism of nanowires (SiNWs) growth in MCEE route depends highly on etching process, we investigated the role of HF concentration and the etching time.
B. Salhi, M.K. Hossain, F. Al-Sulaiman
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Dimensionless parameters of reactive ion etching
Proceedings., 39th Electronic Components Conference, 2003The derivation and character of dimensionless parameters for the semiconductor manufacturing process of reactive ion etching (RIE) in generic form are discussed. Data from characterizations of a variety of films processed under a variety of etching regimes to establish the validity of derived parameters are presented. Fundamental realizations regarding
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Proximity effects for rinse, dry, and etch parameters
SPIE Proceedings, 2003As lithography pushes to the nanoline dimensions, even less drastic changes during photoresist processes can have a non-disregarding impact on proximity behavior, thus these changes can affect the optical proximity correction rules and models. In this study, after the descriptions of the modified mechanical method of rinse and dry processes and the ...
Sang-Kon Kim, Hye-Keun Oh, Ho Seob Kim
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Sensitivity of rinse, dry, and etch parameters
SPIE Proceedings, 2003For the nanoline formation, pattern collapse and etch process are the serious topics. In this study, after the descriptions of the rinse, dry, and etch processes, the pattern collapse model of pressures as the modified mechanical method and the etch model are described for dense and isolated lines.
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Microelectronic Engineering, 1998
Abstract The influence of the dry etching process parameters on the ion induced damage profile was investigated by nitrogen ion beam etching (IBE) of AlGaAs at two different ion energies by spatial resolved confocal photoluminescence (PL) measurements on specially prepared beveled sections of Al 0.35 Ga 0.65 As/GaAs MQW structures. The results reveal
K. Otte +6 more
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Abstract The influence of the dry etching process parameters on the ion induced damage profile was investigated by nitrogen ion beam etching (IBE) of AlGaAs at two different ion energies by spatial resolved confocal photoluminescence (PL) measurements on specially prepared beveled sections of Al 0.35 Ga 0.65 As/GaAs MQW structures. The results reveal
K. Otte +6 more
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Influence of mask material and process parameters on etch angle in a chlorine-based GaN dry etch
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2012The vertical structuring of GaN layers for power application purposes is a key step for successful device operation. Thus, the dry etching of GaN becomes a crucial step. While etch rates and surface roughness have been analyzed well, the sidewall angle of the etched GaN has drawn less attention.
Herwig Hahn +5 more
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On problems in trustworthy predictions of etched track parameters
Radiation Measurements, 2008Abstract It is discussed here how trustworthy predictions of etched track parameters in nuclear track detection technique can be made? Problems involved in doing so are described along with discussion about their possible solutions. Arguments are presented using 5.2 MeV alpha particle track etching experiments with CR-39 detector and corresponding ...
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A STUDY OF THE ROLE OF ELECTRICAL PARAMETERS IN THE ELECTROCHEMICAL ETCHING (ECE) PROCESS
Nuclear Tracks, 1981ABSTRACT The effect of frequency on the density and size of fission tracks and fast neutron induced recoil atom tracks was studied. It was observed that while the choice of frequency is wide (from less than 1 kHz to 4 kHz) for highly ionizing particles like fission fragments, low frequencies (0.25 – 0.5 kHz) are better suited for recoil atom tracks ...
A.M. Bhagwat, S.D. Soman
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Influence of Electrochemical Etching Parameters on Morphology of Porous Silicon
Advanced Materials Research, 2014In order to protect porous silicon from break and enhance it’s porosity and specific surface area, porous silicon is prepared with electrochemical etching method. The charateristic of porous silicon is investigated with SEM and high-speed adsorption surface area and porosity analyzer. The results show that the porous silicon prepared with the method of
Lan Liu +3 more
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