Results 51 to 60 of about 923 (213)

Review of plasma etching processes for III-V semiconductorsMendeley Data

Micro and Nano Engineering
This paper provides a comprehensive literature review and analysis of III-V semiconductor plasma etching, highlighting key etching considerations and providing literature references to inform future process development. Plasma etching processes for III-V
Alison Clarke, Maxime Darnon, Karin Hinzer, Mathieu de Lafontaine   +3 more
doaj   +1 more source

Composites of Shellac and Silver Nanowires as Flexible, Biobased, and Corrosion‐Resistant Transparent Conductive Electrodes

Advanced Functional Materials, EarlyView.
Shellac, a centuries‐old natural resin, is reimagined as a green material for flexible electronics. When combined with silver nanowires, shellac films deliver transparency, conductivity, and stability against humidity. These results position shellac as a sustainable alternative to synthetic polymers for transparent conductors in next‐generation ...
Rahaf Nafez Hussein, Tiago Carneiro Gomes, Eliza Ng, Simon Rondeau‐Gagné, Tricia Breen Carmichael   +4 more
wiley   +1 more source

Fabrication of microchannels in lithium tantalate by selective etching of structures inscribed with a femtosecond laser

JPhys Photonics
Selective etching of material areas modified by femtosecond laser pulses in the volume of lithium tantalate has been applied to produce hollow microchannels. In a fully monolithic approach, microchannels up to 2.5 mm long with cross sections of 2.5 µ m ×
Kore Hasse, Daniel Nwatu, Stella Müller, Sergiy Suntsov, Detlef Kip   +4 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

A Universal Parameter for Silicon Anisotropic Etching Inalkaline Solutions

19th IEEE International Conference on Micro Electro Mechanical Systems, 2006
We propose a new explanation for the difference between the etching properties of potassium-hydroxide (KOH) and tetramethyl-ammonium-hydroxide (TMAH) by focusing on the volume fraction occupied by the corresponding cations, K＋ for KOH and TMA＋ (with molecular structure N(CH3)4＋) for TMAH. We have found experimentally that the differences in the surface
D. Cheng, M.A. Gosalvez, M. Shikida, K. Sato   +3 more
openaire   +2 more sources

High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma

AIP Advances, 2016
Reactive ion etching (RIE) technology for iridium with CF4/O2/Ar gas mixtures and aluminum mask at high temperatures up to 350 °C was developed. The influence of various process parameters such as gas mixing ratio and substrate temperature on the etch ...
Chia-Pin Yeh, Marco Lisker, Bodo Kalkofen, Edmund P. Burte   +3 more
doaj   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Numerical simulation of plasma etching process with AAO mask based on PIC/MCC model

ChemPhysMater
This paper presents a Particle-in-Cell Monte Carlo Collision (PIC/MCC) numerical simulation to investigate plasma etching processes utilizing an anodic aluminum oxide (AAO) mask.
Zeping Li, Ran An, Mingyan Yang, Dongjing Li, Hao Wu   +4 more
doaj   +1 more source

Wearable Smart Patches on Sustainable Chitosan With Reversible Microbial Growth‐Inhibitory Properties

Advanced Functional Materials, EarlyView.
ABSTRACT Chitosan, a polysaccharide upcycled from biowaste, has long promised sustainable, biocompatible, and antimicrobial films and devices, an appeal reinforced by its recent regulatory recognition, with several chitosan‐based antibacterial dressings gaining clearance through the Food and Drug Administration's 510(k) pathway.
Jacopo Nicoletti, Kubra Kocak, Andrea Michel, Enrico Cavarzerani, Ali Raza, Petr Rohzin, Nouha Loudhaief, Saimir Frroku, Nicolò Baldovin, Hazrat Bilal, Alvise Perosa, Maurizio Selva, Flavio Rizzolio, Luca Sbuelz, Sabrina Tamburini, Domenico De Fazio, Giovanni Antonio Salvatore   +16 more
wiley   +1 more source

Investigation of the physical properties of nanoscale porous silicon films

Physical Sciences and Technology, 2016
The structure and physical properties of porous silicon obtained by electrochemical etching of monocrystalline silicon with n-type conductivity in a mixture of hydrofluoric acid and ethyl alcohol were investigated.
S.M. Manakov, Ye. Sagidolda
doaj