Results 61 to 70 of about 923 (213)

Preparation of high-quality pure titanium SLA surface and evaluation of its physicochemical and biological properties - in vitro experiments

open access: yesBMC Oral Health
Objectives This study aimed to prepare high-quality sandblasted large-grit acid-etched surfaces of pure titanium and to evaluate their physicochemical and biological properties.
Qiqi Liu   +6 more
doaj   +1 more source

Femtosecond Laser Precision Etching of Silver Layer on Silica Aerogel Surfaces

open access: yesMicromachines
Silica fiber-reinforced silica aerogel (SFRSA) has low dielectric constant, light weight and high temperature resistance characteristics, making it one of the preferred materials for heat-resistant absorptive layers on the surfaces of high-speed aircraft.
Shengtian Lin   +3 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Self‐Sintering Ionogel Binder for Flexible, Recyclable, and Healable Printed Giant Magnetoresistive Sensors

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT Electronic waste has emerged as a major environmental challenge, driven by the massive consumption and a limited lifetime of modern electronic devices, stimulating the development of sustainable electronics. Here, an all‐biomaterial gelatin‐choline‐citric acid ([Ch][CA]) ionogel is developed as an active binder to realize self‐sintered ...
Lin Guo   +10 more
wiley   +1 more source

Effects of Etching Variations on Ge/Si Channel Formation and Device Performance

open access: yesNanoscale Research Letters, 2018
During the formation of Ge fin structures on a silicon-on-insulator (SOI) substrate, we found that the dry etching process must be carefully controlled. Otherwise, it may lead to Ge over-etching or the formation of an undesirable Ge fin profile.
Jiann-Lin Chen   +2 more
doaj   +1 more source

Fully Additive Vertical Organic Electrochemical Transistors on Renewable and Compostable Substrates Enable Ultrasensitive Bioelectronics

open access: yesAdvanced Functional Materials, EarlyView.
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi   +3 more
wiley   +1 more source

Comparison of the clinical parameters of restorations performed with total-etch and self-etch adhesive techniques

open access: yesEndodontics Today
AIM. To conduct a systematic review to evaluate the differences between the clinical performance of restorations made with total-etch and self-etch techniques.MATERIALS AND METHODS. A literature search was conducted in the Pubmed, Google Scholar and Cyberleninka databases. The research was done according to the PICO strategy.
Z. S. Khabadze   +8 more
openaire   +2 more sources

Production parameters for the formation of metallic nanotubules in etched tracks

open access: yesRadiation Measurements, 2003
The formation of conducting nanotubules in etched tracks is reported in literature since about a decade. However, up to now precise production recipes are scarce. For this sake we present here a systematic study on some important factors that influence the formation of metallic nanotubules.
Fink, Dietmar   +8 more
openaire   +2 more sources

Development of a low-damage atomic layer etching system for SiC with high precision and enhanced surface quality

open access: yesResults in Engineering
As a prominent third-generation semiconductor material, SiC (silicon carbide) has found widespread use in advanced high-power and high-frequency devices.
Zijing Zhang   +6 more
doaj   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

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