Results 91 to 100 of about 47,587 (242)

Infrared Machine Vision System Based on Te NWs‐Au NPs Plasmonic Optoelectronic Memristor for Motion Detection

Advanced Science, EarlyView.
A plasmonic optoelectronic memristor based on Te nanowires‐Au nanoparticles/ι‐carrageenan enables IR‐programmed and visiblelight‐erased non‐volatile conductance. The all‐photonic write/erase scheme supports in‐sensor logic and real‐time motion detection in darkness.
Jingyao Bian, Yongxing Zhu, Ye Tao, Zhongqiang Wang, Xiaoning Zhao, Ya Lin, Haiyang Xu, Yichun Liu   +7 more
wiley   +1 more source

Water‐Assisted Exfoliation of HfO2‐Based Membrane for Flexible Robust Ferroelectric Synaptic Transistors

Advanced Science, EarlyView.
A flexible freestanding HfO2‐based ferroelectric membrane is achieved via a water‐assisted exfoliation technique using a Sr4Al2O₇ sacrificial layer. The BaTiO3/Hf0.5Zr0.5O2/BaTiO3 heterostructure maintains robust ferroelectricity and exhibits reliable synaptic plasticity.
Han Zhang, Miao Zeng, Jingxin Chen, Lei Wang, Sai Jiang, Qian Cao, Xuebo Li, Zekun Hou, Chun Shen, Yulin Gan, Ning Fang, Zhaoliang Liao, Ziyao Zhou, Lin Hao   +13 more
wiley   +1 more source

Ultrasound Activated Piezoelectric Dural Patches to Drive Endogenous Neural Stem Cell–Mediated Repair Traumatic Brain Injury

Advanced Science, EarlyView.
This study presents a wireless, non‐invasive strategy for neural repair by developing a biodegradable piezoelectric dural patch that, under transcranial ultrasound, generates localized electrical fields to drive endogenous neural stem cells toward neuronal differentiation and functional integration.
Pengbo Zhou, Qingyuan Wu, Yang Wu, Runzhe Huang, Wei Li, Hanjie Niu, Hongtao Sun, Huiyu Liu   +7 more
wiley   +1 more source

Molecular Sieve Promoted Growth of Ferroelectric Trilayer 3R‐MoS2 for Polarization‐Dependent Reconfigurable Optoelectronic Synapses

Advanced Science, EarlyView.
The noncentrosymmetric trilayer rhombohedral‐stacked MoS2 nanoflakes with enhanced sliding ferroelectric properties are synthesized via a molecular sieve‐assisted chemical vapor deposition process. The switchable polarization states, combined with the exceptional light/gate voltage modulated electrical properties of these nanoflakes, enable broadband ...
Qichao Xue, Jincheng Zhang, Yuying Wang, Yu Wang, Kuiwei Li, Yuxuan Chen, Fang Zhong, Qing Li, Ning Zhou, Chenying Yang, Yuchuan Shao, Tao Liang   +11 more
wiley   +1 more source

Optoelectronic‐Driven van der Waals Ferroelectric Materials‐Based Memory Devices for Retinomorphic and In‐Sensory Hardware

Advanced Science, EarlyView.
2D ferroelectrics materials enabling non‐volatile polarization memory, optical excitability, and neuromorphic processing within a unified material and provides a mechanistic analysis of polarization‐induced band modulation, including photon‐assisted domain reorientation, switching kinetics, and interfacial dipole coupling that governs resistive ...
Parthasarathi Pal, Yeong‐Her Wang, Sanjay Kumar, Themis Prodromakis   +3 more
wiley   +1 more source

Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices

Advanced Electronic Materials, EarlyView.
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu, Lifang Hu, RuoXuan Zhao, ZhiYong Hou, JinYu Tian   +4 more
wiley   +1 more source

Neuromorphic Motor Control with Electrolyte‐Gated Organic Synaptic Transistors

Advanced Electronic Materials, EarlyView.
Electrolyte‐gated organic synaptic transistor (EGOST)‐based neuromorphic motor control systems integrate sensing, processing, and actuation by mimicking biological synapses. With advantages such as low power consumption, tunable synaptic plasticity, and mechanical flexibility, they are emerging as next‐generation core technologies for real‐time ...
Sung‐Hwan Kim, Ju‐Hyeok Yun, Hea‐Lim Park, Sin‐Hyung Lee   +3 more
wiley   +1 more source

Optical Charge Trap Memory Based on Graphene/ZnO Heterostructures for Long‐Term Retention and Adaptive Learning

Advanced Electronic Materials, EarlyView.
A biocompatible graphene/ZnO optical charge trap memory (CTM) is reported with over 54 h retention, enabled by interfacial photodoping. Using transient absorption spectroscopy and electrical analysis, charge transfer quenching is elucidated and reveal that a large energy barrier at the interface is responsible for long‐term memory retention.
Seungmin Shin, Junhyung Kim, Hyungdoh Lee, Yixuan Dou, Jacob T. Heiden, Seung Eun Lee, Jinwoo Song, Lina Quan, Giulia Tagliabue, Min Seok Jang, Himchan Cho   +10 more
wiley   +1 more source

Organic Thin‐Film Transistors for Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
Organic thin‐film transistors (OTFTs) are reviewed for neuromorphic computing applications, highlighting their power‐efficient, and biological time‐scale operation. This article surveys OFET and OECT devices, compares them with memristors and CMOS, analyzes how fabrication parameters shape spike‐based metrics, proposes standardized characterization ...
Luke McCarthy, Mohan V. Jacob, Mostafa Rahimi Azghadi   +2 more
wiley   +1 more source

Reconfigurable, Non‐Volatile Switching in WO3 Film for Resistive Memory and Multistate Programming Toward Energy‐Efficient Neuromorphic Computing Applications

Advanced Electronic Materials, EarlyView.
WO3${\rm WO}_3$ based resistive switching device was precisely controlled and shows the reconfigurable, non‐volatile switching which can be programmable to multi‐resistance states for memory applications. The memory device can also be utilised for low energy neuromorphic application.
Keval Hadiyal, Nagarajan Raghavan, Ramesh Mohan Thamankar   +2 more
wiley   +1 more source