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Electrically tunable and temperature compensated FBAR

IEEE MTT-S International Microwave Symposium Digest, 2005., 2005
This paper describes the design, fabrication and measurement of an electrically tunable, temperature compensated film bulk acoustic resonator (FBAR) that is formed by integrating FBAR with an electrostatic MEMS actuator. About 0.9% tuning (Δf ≅ 26 MHz) of the series resonant frequency at 2.8 GHz has been obtained with less than 10 V.
null Wei Pang   +3 more
openaire   +1 more source

Unbalanced device comprised of FBAR resonators

2012 IEEE International Ultrasonics Symposium, 2012
A splitbar is comprised of two identical thin film bulk acoustic (FEAR) resonators, whose electrodes are cross connected such that the C-axes of the piezoelectric films are parallel/anti-parallel to an applied electric field stimulus. The RF response of a splitbar is near identical to that of a single resonator, but unlike the single resonator, because
David A. Feld   +4 more
openaire   +1 more source

Temperature compensation of liquid FBAR sensors

Journal of Micromechanics and Microengineering, 2007
In this work we demonstrate a practically complete temperature compensation of the second harmonic shear mode in a composite Al/AlN/Al/SiO2 thin film bulk acoustic resonator (FBAR) in the temperature range 25 °C–95 °C. The main advantages of this mode are its higher Q value in liquids as well as its higher frequency and hence higher resolution for ...
J Bjurström   +3 more
openaire   +1 more source

Circuit Applications of Tuneable FBARs

2013
This chapter looks at the circuit applications of intrinsically and extrinsically tuneable FBARs. VCOs seem to be one of the most attractive circuits for applications of the tuneable FBAR. They benefit both from high Q-factor (much higher than LC tanks based on semiconductor varactors) and tuneability.
Spartak Gevorgian   +2 more
openaire   +1 more source

Large signal performance of ferroelectric FBARs

2012 IEEE/MTT-S International Microwave Symposium Digest, 2012
Ferroelectric thin film bulk acoustic wave resonators (FBARs) have been of growing interest due to their electric field dependent properties. Resonators based on the ferroelectric barium strontium titanate (Ba x Sr (1−x) TiO 3 , BST) are intrinsically switchable, namely they have resonances that switch on with the application of a dc bias voltage.
Victor Lee   +3 more
openaire   +1 more source

FBARs Utilizing Induced Piezoelectric Effect

2013
This chapter is devoted to the theoretical description of tuning of FBARs based on materials with induced piezoelectric effect. Though DC field–induced piezoelectric ity occurs in any centrosymmetric material, only ferroelectrics display an effect that is strong enough to be of interest for practical applications.
Spartak Gevorgian   +2 more
openaire   +1 more source

An Investigation of Lateral Modes in FBAR Resonators

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 2016
Using first principles and the constitutive equations for a piezoelectric, we solve the 2D acoustic wave inside a single, infinite, piezoelectric membrane in order to study the dispersion of Thin Film Bulk Acoustic Resonator (FBAR) lateral modes, with and without infinitely-thin electrodes.
Tiberiu, Jamneala   +4 more
openaire   +2 more sources

Making Non-tuneable Piezoelectric FBARs Tuneable

2013
This chapter explores the possibilities of tuning the resonant and anti-resonant frequencies of fixed-frequency FBARs. The first two sections address the possibilities of intrinsic tuning where the stiffness of the piezoelectric film is changed through applied high DC electric field and by heating.
Spartak Gevorgian   +2 more
openaire   +1 more source

Experimental study of phase noise in FBAR resonators

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2006
Phase noise of micromachined bulk acoustic wave resonators is investigated. A measurement bench, able to characterize the phase noise of a single resonator on-wafer, is set up. The experimental data demonstrate the existence of a 1/f phase noise component, the amplitude of which is strongly dependent on the resonator geometry.
Sébastien, Gribaldo   +3 more
openaire   +2 more sources

ZnO-Based FBAR resonators with carbon nanotube electrodes

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 2011
Film bulk acoustic resonator (FBAR) devices with carbon nanotube (CNT) electrodes directly grown on a ZnO film by thermal chemical vapor deposition have been fabricated. CNT electrodes possess a very low density and high acoustic impedance, which reduces the intrinsic mass loading effect resulting from the electrodes¿ weight and better confines the ...
García-Gancedo, Luis   +7 more
openaire   +3 more sources

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