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The FBAR with Membrane Structure
2012The FBAR has two kinds of structure which are membrane structure and Bragg reflector structure. Both the membrane structure and the Bragg reflector structure form a reflector interface of acoustic wave to the piezoelectric film. In this chapter, we discuss the first structure of FBAR called membrane structure.
Yafei Zhang, Da Chen
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High Frequency Viscosity Sensing with FBARs
2006 IEEE International Frequency Control Symposium and Exposition, 2006Film Bulk Acoustic Resonators operating in thickness shear mode at a frequency of 720 MHz are used to characterize liquids with different viscosities. Their advantage over QCM devices are higher packaging density, CMOS-compatibility as well as lower production costs.
Jan Weber +4 more
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Flexible magnetic sensor based on FBAR
2016 IEEE International Nanoelectronics Conference (INEC), 2016Film bulk acoustic wave resonator (FBAR) is widely-used as RF filter or sensor due to its high frequency and Q-factor. This paper demonstrates the feasibility of FBAR as flexible magnetic sensors, like sticker. The proposed Sensor has a ZnO piezoelectric sandwich structure with magnetostrictive nickel (Ni) electrodes on the Polyimide (PI) substrate ...
Yong Wu +4 more
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FBAR resonator figure of merit improvements
2010 IEEE International Ultrasonics Symposium, 2010Free-standing Bulk Acoustic Resonator (FBAR), as one type of bulk acoustic wave (BAW) devices, has extremely high Q to enable excellent filter performance, and has been successfully applied to the wireless communication market. The Bode equation to calculate the unloaded Q is used to map the Avago FBAR product line resonator Rp values.
Yaqiang Wang +5 more
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A 2GHz voltage tunable FBAR oscillator
IEEE MTT-S International Microwave Symposium Digest, 2003, 2003This paper describes the design and measured performance of a low-noise varactor tuned oscillator based on a film bulk acoustic resonator (FBAR) at 2 GHz. Using varactor tuning, this oscillator demonstrated a 2.5 MHz frequency tuning range at 1985 MHz with a phase noise of -112 dBc/Hz at 10 kHz from the carrier.
A.P.S. Khanna, E. Gane, T. Chong
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A Digitally Controlled FBAR Frequency Reference
2012Crystal oscillators have been the primary frequency reference sources used in communication circuits. However, their size, frequency of operation, and cost are hard to scale. Push toward miniaturization and low cost demands smaller form factor and crystal-oscillator alternatives, and MEMS frequency references have been manufactured recently.
Hiroyuki Ito +2 more
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Film bulk acoustic resonator (FBAR) device
The Journal of the Acoustical Society of America, 2005Disclosed are a film bulk acoustic resonator (FBAR) device and a method for fabricating the film bulk acoustic resonator (FBAR) device. The film bulk acoustic resonator (FBAR) device comprises a membrane layer having a plurality of active regions and provides different resonant frequencies by providing different thicknesses of the active regions of ...
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Complex peripheral Lamb modes in FBARs
2013 IEEE International Ultrasonics Symposium (IUS), 2013In this paper we give experimental observations of the complex valued Lamb mode in a FBAR resonator, using the AIM [1] and standard S-parameter measurements. Furthermore, a theoretical explanation of the observed behavior, based on the Berlincourt formula for the effective coupling coefficient, is offered.
Jyrki Kaitila, John D. Larson
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Ultra-miniature monolithic FBAR filters for wireless applications
IEEE MTT-S International Microwave Symposium Digest, 2005., 2005This paper presents ultra-miniature monolithic transmit (Tx) filters for 1900 MHz PCS using thin film bulk acoustic resonators (FBAR) technology. Conventional FBAR filters often include multiple tuning inductors, which have prevented the miniaturization and the monolithic integration of the filters.
Dongha Shim +6 more
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MEMS For Wireless: FBAR and LiMMS
Proceedings of the Twenty Third National Radio Science Conference (NRSC'2006), 2006This paper describes technology of micro-electro-mechanical systems (MEMS) in the field of mobile handsets, which uses the single-mode CDMA product of 1800-1900 MHz range. In order to gain the market penetration, the HP Labs uses the FBAR project, where it reduces the size and weight of the RF resonators, filters and duplexers. Thus, the brief analysis
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