Results 161 to 170 of about 15,744,163 (247)

Overcoming spectral limits of perovskite photodetectors for the infrared region

InfoScience, EarlyView.
Infrared (IR) photodetectors are vital for modern optoelectronics, but traditional inorganic semiconductors face limitations in cost, processing, and bandgap tunability. This review provides a summary of advanced strategies to extend metal halide perovskites into the IR region, categorizing approaches into intrinsic material engineering, physical ...
Jiean Li, Bobo Li, Mingxia Qiu, Wang Zhang, Xuan Fang   +4 more
wiley   +1 more source

Ferroelectric modulated visual devices with spatial and temporal polarization‐sensitivity for information recognition and processing in visibility‐degraded environments

InfoMat, EarlyView.
Conventional imaging systems often struggle to recognize objects accurately in challenging environments such as underwater or foggy scenes. We developed a polarization‐sensitive artificial vision device inspired by the mantis shrimp that uses advanced two‐dimensional materials and a ferroelectric layer to directly sense, process, and retain visual ...
Zhaoying Dang, Yifei Zhao, Feng Guo, Tao Yu, Hengrui Guo, Jialin Li, Qilong Cui, Qing Li, Jianhua Hao   +8 more
wiley   +1 more source

Van der Waals ferroelectric semiconductor tunnel junction with ultra‐low switching voltage

InfoMat, EarlyView.
Ferroelectric tunnel junctions are promising building blocks for energy‐efficient memory and brain‐inspired computing, but their practical use is limited by the relatively high voltages required for operation. Here, we develop an all‐two‐dimensional ferroelectric tunnel junction based on AgBiP2Se6 that enables reliable memory operation below 0.2 V and ...
Fuqin Sun, Ruihuan Duan, Ziqian Xin, Yinxiao Li, Bingyuan Xue, Zihua Tian, Kejie Guan, Fan Liu, Xiaoshuang Gou, Yingyi Wang, Weifan Zhou, Cheng Zhang, Lin Liu, Zhao Wang, Jia Shi, Zheng Liu, Xiaowei Wang, Ting Zhang   +17 more
wiley   +1 more source

Origin, verification, and device‐level impacts of p‐doping in two‐dimensional transition metal dichalcogenides

InfoMat, EarlyView.
This review provides a comprehensive perspective on p‐doping in two‐dimensional transition metal dichalcogenides, linking the origins of carrier polarity, doping mechanisms, verification methodologies, and device‐level impacts. By establishing correlations among atomic‐scale doping, carrier modulation, and device functionality, it offers practical ...
Seo Yeon Han, Hye In Choi, Ji Yeon Kim, Wenhu Shen, Yong Soo Cho   +4 more
wiley   +1 more source

Bi4Ti2.85Zr0.15O12/Nb: SrTiO3‐Based Artificial Optic Neuron for Synaptic Plasticity Simulation and Light‐Controlled Neuromorphic Computing

Materials Genome Engineering Advances, EarlyView.
An optoelectronic synapse based on Zr‐doped Bi4Ti3O12 exhibits learning/forgetting mimicry and achieves 94.2% accuracy on MNIST, demonstrating a novel pathway for high‐performance neuromorphic computing. ABSTRACT This study enhanced the optoelectronic properties of BIT (Bi4Ti3O12) through Zr doping at the B site, constructing an Au/Bi4Ti2.85Zr0.15O12 ...
Dongping Yang, Zhilong Chen, Zhenhua Tang, Qijun Sun, Yanping Jiang, Xingui Tang   +5 more
wiley   +1 more source

Electrospun conducting polymers: recent trends and the transition towards a sustainable future

Polymer International, EarlyView.
This review discusses the electrospinning of conducting polymers, detailing procedures, fibrous morphologies, improved properties, applications in electronics, and challenges, while outlining future directions for nanofibre‐based devices in various fields.
Xenofon Karagiorgis, Sofia Sandhu, Peter J. Skabara, Ravinder Dahiya   +3 more
wiley   +1 more source

Brain‐Inspired Neuromorphic Device for Artificial Intelligent Robots Applications

SmartBot, EarlyView.
Brain‐inspired neuromorphic devices mimic biological systems to provide an efficient hardware foundation for embodied intelligent robotics. This review explores the material systems and corresponding computing architectures of neuromorphic devices that support low‐power perception, adaptive learning, and real‐time decision‐making.
Jiachen Han, Zheng Wang, Tianyu Wang, Jialin Meng   +3 more
wiley   +1 more source

MXene‐Based Flexible Memory and Neuromorphic Devices

Small, EarlyView.
The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Yan Yan, Shuangmei Xue, Kui Zhou, Meng Zhang, Yutong Zhang, Qi‐Jun Sun, Yi Liu, Vellaisamy A. L. Roy, Ye Zhou, Su‐Ting Han   +13 more
wiley   +1 more source

Memristors Based on Ferroelectric Cu‐Deficient Copper Indium Thiophosphate for Multilevel Storage and Neuromorphic Computing

Small, EarlyView.
Different from CIPS with threshold switching behaviors, Cu‐deficient CIPS* shows stable non‐volatile digital and analog RS. Owing to the formation of metallic IPS at the LRS, CIPS* memristors demonstrate high ON/OFF ratio and endurance stability, which can be utilized to implement multilevel storage.
Mengdie Li, Yanyan He, Chengyang Wang, Weng Fu Io, Feng Guo, Wenjing Jie, Jianhua Hao   +6 more
wiley   +1 more source

Opportunities for 2D‐Material‐Based Multifunctional Devices and Systems in Bioinspired Neural Networks

Small, EarlyView.
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong, Maheswari Sivan, Jieming Pan, Zihang Fang, Jianan Li, Zefeng Xu, Shi Zhao, Quanzhen Wan, Evgeny Zamburg, Aaron Voon‐Yew Thean   +9 more
wiley   +1 more source