Results 161 to 170 of about 2,381 (268)

Integrated In-Memory Sensor and Computing of Artificial Vision Based on Full-vdW Optoelectronic Ferroelectric Field-Effect Transistor. [PDF]

Adv Sci (Weinh)
Wang P, Li J, Xue W, Ci W, Jiang F, Shi L, Zhou F, Zhou P, Xu X.   +8 more
europepmc   +1 more source

MXene‐Based Flexible Memory and Neuromorphic Devices

Small, EarlyView.
The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Yan Yan, Shuangmei Xue, Kui Zhou, Meng Zhang, Yutong Zhang, Qi‐Jun Sun, Yi Liu, Vellaisamy A. L. Roy, Ye Zhou, Su‐Ting Han   +13 more
wiley   +1 more source

Memristors Based on Ferroelectric Cu‐Deficient Copper Indium Thiophosphate for Multilevel Storage and Neuromorphic Computing

Small, EarlyView.
Different from CIPS with threshold switching behaviors, Cu‐deficient CIPS* shows stable non‐volatile digital and analog RS. Owing to the formation of metallic IPS at the LRS, CIPS* memristors demonstrate high ON/OFF ratio and endurance stability, which can be utilized to implement multilevel storage.
Mengdie Li, Yanyan He, Chengyang Wang, Weng Fu Io, Feng Guo, Wenjing Jie, Jianhua Hao   +6 more
wiley   +1 more source

Opportunities for 2D‐Material‐Based Multifunctional Devices and Systems in Bioinspired Neural Networks

Small, EarlyView.
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong, Maheswari Sivan, Jieming Pan, Zihang Fang, Jianan Li, Zefeng Xu, Shi Zhao, Quanzhen Wan, Evgeny Zamburg, Aaron Voon‐Yew Thean   +9 more
wiley   +1 more source

Unified Steep‐Slope Switching and Non‐Volatile Memory in a Complementarily Stabilized van der Waals Ferroelectric Transistor

Small, EarlyView.
We present a van der Waals FeNC‐FET that simultaneously achieves sub‐60 mV/dec steep switching and non‐volatile memory within a single transistor. A CIPS/h‐BN/α‐In2Se3 bi‐ferroelectric gate stack enables a stabilized negative‐capacitance state in FE1 while maintaining the bistable polarization of FE2.
Sangmin Lee, Stanislav Sin, Cheolhwa Jang, Seongkweon Kang, Saeroonter Oh, Sungjoo Lee   +5 more
wiley   +1 more source

Decoding THz‐Driven Dynamic Fingerprints of Ferroelectric Nanotwin Networks

Advanced Materials, Volume 38, Issue 32, 8 June 2026.
ABSTRACT Ultrafast polarization dynamics in ferroelectrics are of considerable interest for high‐speed tunable dielectrics and electro‐optics. Extended domain wall networks formed in ferroelectric twin nanodomains can support collective dynamics in the terahertz regime but require techniques that track polarization and strain evolution driven by ...
Xiaojiang Li, Aiden Ross, Vladimir A. Stoica, Sujit Das, Sankalpa Hazra, Huaiyu (Hugo) Wang, Hari Padma, Matthias C. Hoffmann, Patrick Kramer, Sanghoon Song, Silke Nelson, Takahiro Sato, Diling Zhu, Ramamoorthy Ramesh, Lane W. Martin, Yue Cao, John W. Freeland, Aaron M. Lindenberg, Haidan Wen, Long‐Qing Chen, Venkatraman Gopalan   +20 more
wiley   +1 more source

Endurance Paradox in Hafnium-Oxide-Based Silicon-Channel Ferroelectric Transistors. [PDF]

ACS Appl Mater Interfaces
Das A, Paul A, Tewari M, Lou ZF, Chang YT, Senapati A, Kumar G, Raffel Y, Useinov A, Tumilty N, Wu TL, Lashkare S, Agarwal T, Lee MH, De S.   +14 more
europepmc   +1 more source

Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories

Advanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.
This review summarizes engineering strategies for HfO2 based ferroelectric memories with focus on FeCAP and FeFET structures. It describes how dopant design, stress effects, and interface engineering improve the bulk ferroelectric response. It further discusses how channel engineering supports reliable memory characteristics and scalable integration ...
Eunjin Kim, Jiyong Woo
wiley   +1 more source

Impact of ferroelectric polarization dynamics on thermal reliability in Ferro-FinFETs. [PDF]

Discov Nano
Ma W, Peng Y, Wu Q, Zhang S, Sun L, Xiao W, Zhang C, Ma X, Hao Y.   +8 more
europepmc   +1 more source

Topological Point Defects in SmC* Liquid Crystals Under Mechanical Disturbance

Advanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.
Tangetial air jet shear inducess island formation and nucleates topological point defects in uniform SmC films. Island bounded by edge dislocation loops shrink and transform into isolated point defects under continued shear. Mechanical perturbatio provides a controllable route for defect engineering in smectric liquid crystal thin films.
Gunganist Kongklad, Vandana Molahalli, Apichart Pattanaporkratana, Nattaporn Chattham   +3 more
wiley   +1 more source