Results 171 to 180 of about 2,381 (268)

Towards Artificial Intelligence Hardware With 3D Integrated Ferroelectric Transistors. [PDF]

Small
Seok H, Kim G, Son S, Choi H, Kim T.
europepmc   +1 more source

Record High Polarization at 2 V and Imprint‐Free Operation in Superlattice HfO2‐ZrO2 by Proper Tuning of Ferro and Antiferroelectricity

Advanced Materials Technologies, Volume 11, Issue 11, 5 June 2026.
Low‐power ferroelectric capacitors, based on superlattice HfO2‐ZrO2 is reported. With proper tuning of ferro and antiferroelectricity, an imprint‐free high switchable polarization charge (2Pr of 76 µC/cm2) is obtained with 2MV/cm leading to linear analog weight update and non‐volatile retention, providing a design guideline for emerging non‐volatile ...
Xinye Li, Padma Srivari, Mari Honkanen, Turkka Salminen, Sayani Majumdar   +4 more
wiley   +1 more source

Flexible active-matrix micro-LED display with 1T-1FeMFET architecture featuring scaling-limit-free design. [PDF]

Nat Commun
Huang T, Yang G, Sang Y, Zhuo F, Liu M, Li G, Cheng H, Yu Z, Fu Z, Liu S, Shen H, Yu Z, Liu B, Wang X, Wu W, Shi R, Zhuang Z, Sun W.   +17 more
europepmc   +1 more source

Memristive Physical Reservoir Computing

Advanced Science, Volume 13, Issue 33, 15 June 2026.
Memristors’ nonlinear dynamics and input‐dependent memory effects make them ideal candidates for high‐performance physical reservoir computing (RC). Based on their conductance modulation, memristors can be classified as electronic or optoelectronic types.
Dian Jiao, Ziyuan Wang, Jingrui Wang, Li Zhang, Xianhua Wei, Lingxiang Hu, Zongxiao Li, Athanasios V. Vasilakos, Zhizhen Ye, Fei Zhuge   +9 more
wiley   +1 more source

Recent Advances and Perspectives on Field-Effect Transistors for Artificial Visual Neuromorphic Systems. [PDF]

Adv Sci (Weinh)
Yaqian L, Menghua L, Yihang X, Manyu Z, Chunkang L, Xiaozhou L, Yi D, Lingli W, Liying J, Yuanyuan H, Huipeng C, Lang J.   +11 more
europepmc   +1 more source

Progress in Strain Engineering of 2D‐Integrated Heterostructures for Ultrasensitive Sensors

Advanced Science, Volume 13, Issue 33, 15 June 2026.
 . ABSTRACT Two‐dimensional (2D) integrated heterostructures have emerged as a cornerstone in the advancement of next‐generation sensor technologies. These heterostructures, which combine materials with different dimensionalities, have led to significant breakthroughs in sensing performance and device integration.
That Buu Ton, Tuan Sang Tran, Duc Khanh Tran, Van Thanh Dau, Dzung Viet Dao   +4 more
wiley   +1 more source

TiO₂ nanolayer-assisted top-interface engineering for disturbance-free FeFETs: a blueprint for future van der Waals memory. [PDF]

Nano Converg
Kang H, Kwak J, Kim G, Lee S, Kim Y, Park S, Lim S, Seo K, Kim W, Ha D, Ahn J, Jeon S.   +11 more
europepmc   +1 more source

Thermal Conductivity Across the Nonpolar‐Polar Phase Transition in Incipient Ferroelectric KTaO3

Advanced Electronic Materials, Volume 12, Issue 11, 8 June 2026.
Phonon dispersion of the cubic nonpolar ground‐state and a ferroelectric tetragonal phase, stabilized by a compressive strain of 2%. ABSTRACT The manipulation of the lattice of polar materials via external electric fields is an effective way to dynamically control the heat flux, accessing different thermal conductivity, κ${\bm \kappa }$, states ...
Martí Raya‐Moreno, Nakib H. Protik, Riccardo Rurali   +2 more
wiley   +1 more source

Optoelectronic-Driven van der Waals Ferroelectric Materials-Based Memory Devices for Retinomorphic and In-Sensory Hardware. [PDF]

Adv Sci (Weinh)
Pal P, Wang YH, Kumar S, Kumar S, Prodromakis T.   +4 more
europepmc   +1 more source