Results 191 to 200 of about 15,744,163 (247)

Carrier Mobility Enhancement in Two‐Dimensional Semiconductor

Interdisciplinary Materials, Volume 5, Issue 5, Page 796-833, September 2026.
In this review, we comprehensively describe recent progress in carrier mobility enhancement strategies for 2D semiconductor‐based field‐effect transistors considering the role of intrinsic defects, electrode contact interfaces, dielectric engineering, and lattice strain engineering.
Huchanghui Zuo, Yuehao Li, Xiangkai Liu, Chao Tan, Guohua Hu, Mingdong Dong, Zegao Wang   +6 more
wiley   +1 more source

Ferroelectricity-functionalized organic field-effect transistors

, 2006
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Scaling the Ferroelectric Field Effect Transistor

Integrated Ferroelectrics, 2005
ABSTRACT The scaling of the ferroelectric field effect transistor (FeFET) is studied by utilizing transistor model simulation (BSIM3v3) and analytic expressions, and is compared to the scaling of the MOSFET. Two scaling approaches are discussed—“variable gate stack scaling,” that requires changing the gate stack, and “constant gate stack scaling,” that
Rainer Waser
exaly   +2 more sources

Electronic model of a Ferroelectric Field Effect transistor

Integrated Ferroelectrics, 2001
A pair of electronic models has been developed of a Ferroelectric Field Effect transistor. These models can be used in standard electrical circuit simulation programs to simulate the main characteristics of the FFET. The models use the Schmitt trigger circuit as a basis for their design. One model uses bipolar junction transistors and one uses MOSFET's.
Todd C. Macleod, Fat Duen Ho
exaly   +2 more sources

Ferroelectric Single-Crystal Gated Graphene/Hexagonal-BN/Ferroelectric Field-Effect Transistor

ACS Nano, 2015
The effect of a ferroelectric polarization field on the charge transport in a two-dimensional (2D) material was examined using a graphene monolayer on a hexagonal boron nitride (hBN) field-effect transistor (FET) fabricated using a ferroelectric single ...
Young Hee Lee, Dongseok Suh, Haeyong Kang   +2 more
exaly   +2 more sources

Ferroelectric Field Effect Transistors as a Synapse for Neuromorphic Application

IEEE Transactions on Electron Devices, 2021
In spite of the increasing use of machine learning techniques, in-memory computing and hardware have increased the interest to accelerate neural network operation. Henceforth, novel embedded nonvolatile memories (eNVMs) for highly scaled technology nodes, like ferroelectric field effect transistors (FeFETs), are heavily studied and very promising ...
M. Lederer, T. Kampfe, T. Ali, F. Muller, R. Olivo, R. Hoffmann, N. Laleni, K. Seidel   +7 more
openaire   +1 more source

Ferroelectric-Gate Field Effect Transistor Memories

, 2020
This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory
Sakai, Shigeki, Park, Byung-Eun, Okuyama, Masanori, Ishiwara, Hiroshi, Yoon, Sung-Min   +4 more
openaire   +2 more sources

Variability Analysis for Ferroelectric Field-Effect Transistors

2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2021
The random variation sources have a significant influence on the performance of ferroelectric field-effect transistors (FeFETs). We conducted a comparative analysis in TCAD on the process variation induced variability of the 28nm Hf 0.5 Zr 0.5 O 2 based FeFETs. The ferroelectric/dielectric phase variation in the HZO gate stack, the metal work function
Gihun Choe, Shimeng Yu
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Ferroelectric Field Effect Transistors for Memory Applications

Advanced Materials, 2010
AbstractThe non‐volatile polarization of a ferroelectric is a promising candidate for digital memory applications. Ferroelectric capacitors have been successfully integrated with silicon electronics, where the polarization state is read out by a device based on a field effect transistor configuration. Coupling the ferroelectric polarization directly to
Jason, Hoffman, Xiao, Pan, James W, Reiner, Fred J, Walker, J P, Han, Charles H, Ahn, T P, Ma   +6 more
openaire   +2 more sources

Insinhts on the DC Characterization of Ferroelectric Field-Effect-Transistors

2018 76th Device Research Conference (DRC), 2018
In this work, we report on the fabrication, characterization, and modeling of ferroelectric field-effect- transistors (FeFET). We demonstrate that polarization switching within ordinary 1T ferroelectric memory devices under specific conditions results in the measurement of subthreshold slopes $ , near-zero hysteresis, negative drain induced barrier ...
Matthew Jerry, Jeffrey A. Smith, Kai Ni 0004, Atanu Saha, Sumeet Kumar Gupta, Suman Datta   +5 more
openaire   +1 more source