Results 191 to 200 of about 2,381 (268)

Integration of Freestanding High-k Oxide Membranes for 2D Ferroelectric Field-Effect Transistors. [PDF]

Adv Sci (Weinh)
Guo Z, Sha X, Xu F, Huang G, Zhang J, Mou Y, Zhao G, Liu J, Lan Q, Song W, Zhang C, Huang H, Zheng C, Wang L, Guo H, Shen J, Shi W.   +16 more
europepmc   +1 more source

Water-Assisted Exfoliation of HfO₂-Based Membrane for Flexible Robust Ferroelectric Synaptic Transistors. [PDF]

Adv Sci (Weinh)
Zhang H, Zeng M, Chen J, Wang L, Jiang S, Cao Q, Li X, Hou Z, Shen C, Gan Y, Fang N, Liao Z, Zhou Z, Hao L.   +13 more
europepmc   +1 more source

Coupled polarization dynamics and charge tunneling enable reconfigurable heterojunctions. [PDF]

Nat Commun
Li C, Yu T, Zhang Z, Deng Q, Hui F, Wang Z, Lanza M, Sun L.   +7 more
europepmc   +1 more source

High performance and low leakage heterojunction 10 nm PZT NC-FinFET for low power application. [PDF]

Sci Rep
Tripathi SL, Prakash NN, Raj B, Hadiyoso S.   +3 more
europepmc   +1 more source

Breakthrough in 2D ultrahigh-<i>κ</i> dielectrics by paraelectric phase engineering in van der Waals crystal. [PDF]

Natl Sci Rev
Wu Q, Peng H.
europepmc   +1 more source

High-Performance Differential Imaging via Reconfigurable Black Phosphorus p-n Homojunction Optoelectronics. [PDF]

Nanomicro Lett
Hao R, Luo L, Yang L, Yang X, Gao F, Zhu M, Li Y, Feng Q, Zhang Z.   +8 more
europepmc   +1 more source

Retraction: Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor. [PDF]

Sci Rep, 2016
Park JH, Kim HY, Jang GS, Seok KH, Chae HJ, Lee SK, Kiaee Z, Joo SK.   +7 more
europepmc   +1 more source

Advancing the Frontiers of HfO₂-Based Ferroelectric Memories: Innovative Concepts from Materials to Applications. [PDF]

Adv Mater
Zhou Z, Li L, Feng Y, Wang X, Zheng Z, Jiao L, Zheng H, Shi Y, Ang KW, Gong X.   +9 more
europepmc   +1 more source

Polarity-dependent ferroelectric modulations in two-dimensional hybrid perovskite heterojunction transistors. [PDF]

Nat Commun
Li E, He W, Wang R, Zhang C, Zhou H, Liu Y, Yuan Y, Loh KP, Chu J, Li W.   +9 more
europepmc   +1 more source

Design and analysis of NC-FinFET using Pb(Zr_yTi_1-y)O₃ under high ionising radiations. [PDF]

Sci Rep
Tripathi SL, Prakash NN, Yadav AK, Raj B, Wijayanto I.   +4 more
europepmc   +1 more source