Results 201 to 210 of about 15,744,163 (247)

Tunnel Field Effect Transistor with Ferroelectric Gate Insulator

Journal of Nanoscience and Nanotechnology, 2019
Ferroelectric tunnel field effect transistor (Fe-TFET) having improved DC performance in comparison to the conventional TFET (c-TFET) is proposed and investigated through the technology computer-aided design (TCAD) simulation. By inserting ferroelectric material into the gate insulator of TFET, enhanced on-current (Ion) is obtained. It is attributed to
Kitae, Lee, Junil, Lee, Sihyun, Kim, Euyhwan, Park, Ryoongbin, Lee, Hyun-Min, Kim, Sangwan, Kim, Byung-Gook, Park   +7 more
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Study of ferroelectric-superconductor field effect transistor

SPIE Proceedings, 1996
A ferroelectric-superconducting three-terminal device consisting of a YBCO base layer and a PbZrxTi1-xO3 (PZT) gate has been developed. This ferroelectric-superconductor field effect transistor has non-volatility and retention behavior based on the memory effect of the ferroelectric gate.
Naijuan Wu, H. Lin, T. Q. Huang, Scott D. Endicter, D. Liu, Alex Ignatiev   +5 more
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The future of ferroelectric field-effect transistor technology

Nature Electronics, 2020
The discovery of ferroelectricity in oxides that are compatible with modern semiconductor manufacturing processes, such as hafnium oxide, has led to a re-emergence of the ferroelectric field-effect transistor in advanced microelectronics. A ferroelectric field-effect transistor combines a ferroelectric material with a semiconductor in a transistor ...
Asif Islam Khan, Ali Keshavarzi, Suman Datta   +2 more
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The Ferroelectric Field Effect Transistor Simulation and Analysis

Advanced Materials Research, 2013
A ferroelectric field effect transistor (FFET) with the metal/ferroelectric/ semiconductor (MFS) structure is designed and simulated. The simulation results show that the drain current at Vg=0 after polarized is decided by Pr and Pr/Ps. When increasing Pr, Id enhanced. When Pr/Ps decreases, Idincreases if the FFET is saturated. When a voltage (Vp=1.5v)
Qiang Wang, Sun Hao Chen Zhang, Zheng Dong Yu, Guo Ran Hua   +3 more
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Simulation Model of a Ferroelectric Field Effect Transistor

Integrated Ferroelectrics, 2002
An electronic simulation model has been developed of a ferroelectric field effect transistor (FFET). This model can be used in standard electrical circuit simulation programs to simulate the main characteristics of the FFET. The model uses a previously developed algorithm that incorporates partial polarization as a basis for the design.
Todd C. Macleod, Fat Duen Ho
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Memory modes of ferroelectric field effect transistors

Solid-State Electronics, 1977
Abstract Effects of traps on the memory characteristics of ferroelectric field effect transistors with the metat-ferroelectric-insulator-semiconductor structure were theoretically analyzed. Various modes of operation, i.e. the polarization-limited mode, trap-limited mode, critical field-limited mode, MNOS mode and probability-limited mode, were ...
Kentaro Ito, Hidetoshi Tsuchiya
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Cryogenic characterization of a ferroelectric field-effect-transistor

Applied Physics Letters, 2020
A ferroelectric field-effect transistor (FeFET) with scaled dimensions (170 nm and 24 nm of gate width and length, respectively) and a 10 nm thick Si doped HfO2 ferroelectric in the gate oxide stack are characterized at cryogenic temperatures down to 6.9 K.
Zheng Wang, Hanbin Ying, Winston Chern, Shimeng Yu, Martin Mourigal, John D. Cressler, Asif I. Khan   +6 more
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The Quantum Metal Ferroelectric Field-Effect Transistor

IEEE Transactions on Electron Devices, 2014
It has recently been suggested that ferroelectric (FE) negative capacitance effects can be used to achieve steep subthreshold slope field-effect transistors, which are greatly desired for reducing energy consumption in modern digital electronics. Here, we propose that this concept can be improved by the introduction of a very thin metal or metal-like ...
David J. Frank, Paul M. Solomon, Catherine Dubourdieu, Martin M. Frank, Vijay Narayanan, Thomas N. Theis   +5 more
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Organic field effect transistors with ferroelectric hysteresis

Thin Solid Films, 2007
Abstract The ferroelectric copolymer Poly(vinylidene fluoride trifluoroethylene) is used as insulating material for capacitor structures and organic field effect transistors. For capacitors, we find the typical hysteresis in the capacitance–voltage characteristic upon increasing the voltage scan window. A writing process with adequate electric fields
Klaus Müller, Karsten Henkel, Ioanna Paloumpa, Dieter Schmeiβer   +3 more
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Polymorphism of Hafnia-Based Ferroelectrics for Ferroelectric Field-Effect Transistors

2020
In this chapter, the thermodynamic and kinetic origins of the unexpected ferroelectric phase formation in emerging fluorite-structure oxides such as HfO2 and ZrO2 are discussed. Various thermodynamic factors, such as doping, stress, and surface/interface/grain boundary energies, could affect the relative free energies of crystalline phases.
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