Results 221 to 230 of about 2,381 (268)

Scaling the Ferroelectric Field Effect Transistor

Integrated Ferroelectrics, 2005
ABSTRACT The scaling of the ferroelectric field effect transistor (FeFET) is studied by utilizing transistor model simulation (BSIM3v3) and analytic expressions, and is compared to the scaling of the MOSFET. Two scaling approaches are discussed—“variable gate stack scaling,” that requires changing the gate stack, and “constant gate stack scaling,” that
Rainer Waser
exaly   +2 more sources

Ferroelectric Single-Crystal Gated Graphene/Hexagonal-BN/Ferroelectric Field-Effect Transistor

ACS Nano, 2015
The effect of a ferroelectric polarization field on the charge transport in a two-dimensional (2D) material was examined using a graphene monolayer on a hexagonal boron nitride (hBN) field-effect transistor (FET) fabricated using a ferroelectric single ...
Haeyong Kang, Jeongmin Park, Young Hee Lee   +2 more
exaly   +2 more sources

Ferroelectric-Gate Field Effect Transistor Memories

, 2020
This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory
Sakai, Shigeki, Park, Byung-Eun, Okuyama, Masanori, Ishiwara, Hiroshi, Yoon, Sung-Min   +4 more
openaire   +2 more sources

Ferroelectric Field Effect Transistors as a Synapse for Neuromorphic Application

IEEE Transactions on Electron Devices, 2021
In spite of the increasing use of machine learning techniques, in-memory computing and hardware have increased the interest to accelerate neural network operation. Henceforth, novel embedded nonvolatile memories (eNVMs) for highly scaled technology nodes, like ferroelectric field effect transistors (FeFETs), are heavily studied and very promising ...
M. Lederer, T. Kampfe, T. Ali, F. Muller, R. Olivo, R. Hoffmann, N. Laleni, K. Seidel   +7 more
openaire   +1 more source

Variability Analysis for Ferroelectric Field-Effect Transistors

2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2021
The random variation sources have a significant influence on the performance of ferroelectric field-effect transistors (FeFETs). We conducted a comparative analysis in TCAD on the process variation induced variability of the 28nm Hf 0.5 Zr 0.5 O 2 based FeFETs. The ferroelectric/dielectric phase variation in the HZO gate stack, the metal work function
Gihun Choe, Shimeng Yu
openaire   +1 more source

Ferroelectric-Gate Field Effect Transistor Memories

, 2016
This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory
Sakai, Shigeki, Park, Byung-Eun, Okuyama, Masanori, Ishiwara, Hiroshi, Yoon, Sung-Min   +4 more
openaire   +2 more sources

Ferroelectric Field Effect Transistors for Memory Applications

Advanced Materials, 2010
AbstractThe non‐volatile polarization of a ferroelectric is a promising candidate for digital memory applications. Ferroelectric capacitors have been successfully integrated with silicon electronics, where the polarization state is read out by a device based on a field effect transistor configuration. Coupling the ferroelectric polarization directly to
Jason, Hoffman, Xiao, Pan, James W, Reiner, Fred J, Walker, J P, Han, Charles H, Ahn, T P, Ma   +6 more
openaire   +2 more sources

Tunnel Field Effect Transistor with Ferroelectric Gate Insulator

Journal of Nanoscience and Nanotechnology, 2019
Ferroelectric tunnel field effect transistor (Fe-TFET) having improved DC performance in comparison to the conventional TFET (c-TFET) is proposed and investigated through the technology computer-aided design (TCAD) simulation. By inserting ferroelectric material into the gate insulator of TFET, enhanced on-current (Ion) is obtained. It is attributed to
Kitae, Lee, Junil, Lee, Sihyun, Kim, Euyhwan, Park, Ryoongbin, Lee, Hyun-Min, Kim, Sangwan, Kim, Byung-Gook, Park   +7 more
openaire   +2 more sources

Insinhts on the DC Characterization of Ferroelectric Field-Effect-Transistors

2018 76th Device Research Conference (DRC), 2018
In this work, we report on the fabrication, characterization, and modeling of ferroelectric field-effect- transistors (FeFET). We demonstrate that polarization switching within ordinary 1T ferroelectric memory devices under specific conditions results in the measurement of subthreshold slopes $ , near-zero hysteresis, negative drain induced barrier ...
Matthew Jerry, Jeffrey A. Smith, Kai Ni 0004, Atanu Saha, Sumeet Kumar Gupta, Suman Datta   +5 more
openaire   +1 more source

Study of ferroelectric-superconductor field effect transistor

SPIE Proceedings, 1996
A ferroelectric-superconducting three-terminal device consisting of a YBCO base layer and a PbZrxTi1-xO3 (PZT) gate has been developed. This ferroelectric-superconductor field effect transistor has non-volatility and retention behavior based on the memory effect of the ferroelectric gate.
Naijuan Wu, H. Lin, T. Q. Huang, Scott D. Endicter, D. Liu, Alex Ignatiev   +5 more
openaire   +1 more source