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Electronic model of a Ferroelectric Field Effect transistor
Integrated Ferroelectrics, 2001A pair of electronic models has been developed of a Ferroelectric Field Effect transistor. These models can be used in standard electrical circuit simulation programs to simulate the main characteristics of the FFET. The models use the Schmitt trigger circuit as a basis for their design. One model uses bipolar junction transistors and one uses MOSFET's.
Todd C. Macleod, Fat Duen Ho
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Advances of the development of a ferroelectric field-effect transistor on Ge(001)
2017 IEEE International Conference on IC Design and Technology (ICICDT), 2017Here we report the recent advances towards the ferroelectric field-effect on Ge(001). We will demonstrate carrier density modulation in the underlying Ge(001) substrate by switching the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO 3 on Ge.
Patrick Ponath +14 more
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2D negative capacitance field-effect transistor with organic ferroelectrics
Nanotechnology, 2018In the past fifty years, complementary metal-oxide-semiconductor integrated circuits have undergone significant development, but Moore's law will soon come to an end. In order to break through the physical limit of Moore's law, 2D materials have been widely used in many electronic devices because of their high mobility and excellent mechanical ...
Heng Zhang +6 more
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Van der Waals Ferroelectric Semiconductor Field Effect Transistor for In-Memory Computing
ACS Nano, 2023Juanxia Wu, Yaming Zhou, Haowen Hu
exaly
Sub-Nanosecond Switching of Si:HfO2 Ferroelectric Field-Effect Transistor
Nano Letters, 2023Mor M Dahan +2 more
exaly
Features, Principles and Development of Ferroelectric–Gate Field-Effect Transistors
2016Ferroelectric-gate field effect transistor (FeFET) memories are overviewed. The FeFET shows excellent features as an integrated memory such as nonvolatality, better scalability, higher read-write speeds, lower dissipation powers, higher tamper resistances and higher radioactivity tolerance.
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Ferroelectric-Gate Field-Effect Transistor Memory With Recessed Channel
IEEE Electron Device Letters, 2020Kitae Lee, Jong-Ho Bae, Sangwan Kim
exaly
ScAlN Based Ferroelectric Field Effect Transistors with ITO Channel
2023 Device Research Conference (DRC), 2023Shubham Mondal +5 more
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Low-Frequency Noise Characteristics of Ferroelectric Field-Effect Transistors
2023 IEEE International Reliability Physics Symposium (IRPS), 2023Omkar Phadke +6 more
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